Abstract: An antenna module includes a first metal plate and a frame body. The frame body surrounds the first metal plate. The frame body includes a first antenna radiator, a second antenna radiator, a third antenna radiator, a first breakpoint and a second breakpoint. The first antenna radiator includes a first feeding end and excites a first frequency band. The second antenna radiator includes a second feeding end and excites a second frequency band. The third antenna radiator includes a third feeding end and excites a third frequency band. The first breakpoint is located between the first antenna radiator and the second antenna radiator. The second breakpoint is located between the second antenna radiator and the third antenna radiator. An electronic device including the above-mentioned antenna module is also provided.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.

Abstract: A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A touch device with light frequency sensor to sense the relative position of an object to be detected includes a work area, a light source, at least two light frequency sensors, and a position computation module. The light source is arranged toward the work area for providing light with predetermined frequency. The two light frequency sensors are arranged for respectively detecting the light frequency signals entered into the lens and the optical filter. The position computation module is linked with the two light frequency sensors for signal connection and detects characteristic data by means of trigonometry to determine the position of the object to be detected. As the light frequency sensor could simple detects the signal, the position computing module with a relative low-order computing is capable of processing the signal. That means the high-order processor of the prior art is unnecessary to be used to processing the acquired image.

Abstract: A sensing structure and method for a touch spot of a resistive touch panel, includes a first conducting layer, with a frame of the first conducting layer defined as an X-axis, a plurality of parallel first resistance detecting lines designed towards Y-axis; and a second conducting layer coincident with the first conductive layer, and a plurality of second resistance detecting lines with certain slope angles on the second conducting layer. The plural second resistance detecting lines intersect plural first resistance detecting lines to form interlacing and fixed blocks. In response to a screen touch, the position of the Y-axis of the second resistance detecting line is used in a triangulation calculation.

Abstract: A device and method of identifying the position of a determinant via combining optical image with a single axis of touch panel includes sensing identification of any single axis via only one image sensor module provided at a side or outside the work area for retrieving images and combining with the identification device of the touch panel in the work area, then, calculating the relative position of the determinant through the triangulating relationship and the formula x×tan ?=y in response to retrieved images and identified information from the touch panel.