Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: A coherent Raman spectro-microscopy system is configured for generating a spectro-microscopic image of a sample and includes a light source, a supercontinuum spectrum generator, a color filter assembly, and a spectro-microscopic assembly. The light source is for emitting at least one pulsed laser beam. The supercontinuum spectrum generator is for broadening the bandwidth of at least one pulsed laser beam. The color filter assembly is for filtering the bandwidth of at least one pulsed laser beam according to a predetermined bandwidth and converting at least one pulsed laser beam into a coherent spectro-microscopic laser beam. The sample is disposed in the spectro-microscopic assembly, and the spectro-microscopic assembly receives the coherent spectro-microscopic laser beam so that the coherent spectro-microscopic laser beam passes through the sample to generate the spectro-microscopic image of the sample.

Abstract: An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. A distance from a first horizontal cell boundary to a proximal edge of the first conductor segment is larger than a distance from a second horizontal cell boundary to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.

Abstract: Systems, methods and devices are provided, which can include an engineering change order (ECO) base. A base layout cell includes metal layer regions, conductive gate patterns arranged above metal layer regions; oxide definition (OD) patterns, metal-zero layer over oxide-definition (metal-zero) patterns, at least one cut metal layer (CMD) pattern; and at least one via region. The base layout cell can be implemented in at least two non-identical functional cells. A first functional cell of the at least two non-identical functional cells includes first interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a first layout, and a second functional cell of the at least two non-identical functional cells includes second interconnection conductive patterns arranged connecting metal-zero structures corresponding to at least two metal-zero patterns in a second layout.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: A laser source apparatus is for providing a beam path to generate a first laser beam and a second laser beam. The laser source apparatus includes a laser generator, at least one spectrum broadening unit and a beam splitter on the beam path. The laser generator is configured to generate an original laser beam with a pulse duration smaller than 1 ps. The spectrum broadening unit is configured in a following stage of the laser generator. The spectrum broadening unit includes a multiple plate continuum. The multiple plate continuum includes a plurality of thin plates, and the thin plates are configured along the beam path in order. The beam splitter is configured in the following stage of the laser generator to divide the original laser beam into the first laser beam and the second laser beam.

Abstract: A fan device comprises a processor, a fan motor and a light emitting element. The processor comprises an input terminal, a first and a second output terminals. An initial mode of the processor is in one of a rotation speed control mode and a light emission control mode. The input terminal is configured to receive an input instruction, and the input instruction comprises a first characteristic. The fan motor is electrically connected to the first output terminal, and the light emitting element is electrically connected to the second output terminal. When a value of the first characteristic is within a characteristic value range, the processor is switched from the initial mode to the other of the rotation speed control mode and the light emission control mode. When the value of the first characteristic is not within the characteristic value range, the initial mode of the processor is maintained.

Abstract: A laser source apparatus is for providing a beam path to generate a first laser beam and a second laser beam. The laser source apparatus includes a laser generator, at least one spectrum broadening unit and a beam splitter on the beam path. The laser generator is configured to generate an original laser beam with a pulse duration smaller than 1 ps. The spectrum broadening unit is configured in a following stage of the laser generator. The spectrum broadening unit includes a multiple plate continuum. The multiple plate continuum includes a plurality of thin plates, and the thin plates are configured along the beam path in order. The beam splitter is configured in the following stage of the laser generator to divide the original laser beam into the first laser beam and the second laser beam.

Abstract: A fan device comprises a processor, a fan motor and a light emitting element. The processor comprises an input terminal, a first and a second output terminals. An initial mode of the processor is in one of a rotation speed control mode and a light emission control mode. The input terminal is configured to receive an input instruction, and the input instruction comprises a first characteristic. The fan motor is electrically connected to the first output terminal, and the light emitting element is electrically connected to the second output terminal. When a value of the first characteristic is within a characteristic value range, the processor is switched from the initial mode to the other of the rotation speed control mode and the light emission control mode. When the value of the first characteristic is not within the characteristic value range, the initial mode of the processor is maintained.

Abstract: An online cloud-based service processing system, an online evaluation method and a computer program product thereof are provided. The online evaluation method includes: running at least one application service unit of the processing system; executing at least one evaluation registration procedure for at least one application service evaluation unit of the processing system in response to at least one registration request; running the at least one application service evaluation unit; dispatching at least one online service request respectively to the at least one application service unit and the at least one application service evaluation unit, and generating at least one output result corresponding to the at least one online service request; and calculating at least one ranking for each of the at least one application service evaluation unit based on output result(s) generated by the at least one application service evaluation unit among the at least one output result.

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesse

Abstract: A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesse

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; one or a plurality of indentations, comprising a bottom part extending downward through the second semiconductor layer and the active layer to reach the first semiconductor layer and exposing the first semiconductor layer; a plurality of metal layers, comprising a first metal layer connecting to the first semiconductor layer through the bottom part, and a second metal layer deposited on the first metal layer; and an insulating layer formed between the first and the second metal layers, disposed on the indentation and covering the first metal layer, wherein the second metal layer comprises one or a plurality of recesses at a top surface thereof corresponding to the one or plurality of indentations.

Abstract: An online cloud-based service processing system, an online evaluation method and a computer program product thereof are provided. The online evaluation method includes: running at least one application service unit of the processing system; executing at least one evaluation registration procedure for at least one application service evaluation unit of the processing system in response to at least one registration request; running the at least one application service evaluation unit; dispatching at least one online service request respectively to the at least one application service unit and the at least one application service evaluation unit, and generating at least one output result corresponding to the at least one online service request; and calculating at least one ranking for each of the at least one application service evaluation unit based on output result(s) generated by the at least one application service evaluation unit among the at least one output result.

Abstract: Apparatuses and methods for supercontinuum generation using a laser beam and a plurality of condensed state transparent plates are presented. As an example, plate material to be used for one of the plurality of plates is determined. A thickness of the one of the plurality of plates is also determined. An allowable laser intensity of the laser beam is then determined to be ?/(2n0n2L), where ? is the central incident wavelength in vacuum, n0 is the linear refractive index, n2 is the third-order nonlinear coefficient. A location of a next plate is then determined to be a distance downstream from the one of the plurality of plates where a laser intensity of the laser beam returns to a value of the determined allowable laser intensity.

Abstract: Apparatuses and methods for supercontinuum generation using a laser beam and a plurality of condensed state transparent plates are presented. As an example, plate material to be used for one of the plurality of plates is determined. A thickness of the one of the plurality of plates is also determined. An allowable laser intensity of the laser beam is then determined to be ?/(2n0n2L), where ? is the central incident wavelength in vacuum, n0 is the linear refractive index, n2 is the third-order nonlinear coefficient. A location of a next plate is then determined to be a distance downstream from the one of the plurality of plates where a laser intensity of the laser beam returns to a value of the determined allowable laser intensity.

Abstract: A light emitting diode (LED) chip including a first type semiconductor layer, an light-emitting layer, a second type semiconductor layer, a current blocking layer, a transparent conductive layer and an electrode is provided. The light-emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light-emitting layer. The current blocking layer is disposed on the second type semiconductor layer. The transparent conductive layer is disposed on the second type semiconductor layer and covered the current blocking layer. The electrode is disposed on the transparent conductive layer corresponding to the current blocking layer. The current blocking layer and the electrode respectively have a first width and a second width in a cross section view, and the first width of the current blocking layer is larger than the second width of the electrode.

Abstract: A continuous spectrum generation apparatus including a laser light source and a plurality of condensed state transparent plates is provided. The laser light source is configured to emit a laser beam. The condensed state transparent plates are disposed on the transmission path of the laser beam in sequence, and configured to successively extend the spectral bandwidth of the laser beam in sequence. An assembling method of a continuous spectrum generation apparatus is also provided.

Abstract: A continuous spectrum generation apparatus including a laser light source and a plurality of condensed state transparent plates is provided. The laser light source is configured to emit a laser beam. The condensed state transparent plates are disposed on the transmission path of the laser beam in sequence, and configured to successively extend the spectral bandwidth of the laser beam in sequence. An assembling method of a continuous spectrum generation apparatus is also provided.

Abstract: A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; at least one indentation comprising a bottom part extending downward to reach the first semiconductor layer and exposing the first semiconductor layer; a first metal layer disposed on the second semiconductor layer, connecting to the first semiconductor layer at the bottom part of the indention; and an first insulating layer deposited on the second semiconductor layer and between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer.