Abstract: Disclosed are an edge tool configuration method and an electronic device. The edge tool configuration method includes: detecting a placement status of the electronic device through a sensor; reading configuration information of the edge tool according to the placement status, wherein the configuration information includes initial configuration information of the edge tool in a plurality of default placement statuses; placing the edge tool at an edge position in a display interface of a display according to the configuration information in the placement status.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure also includes a first metal gate stack and a second metal gate stack over the substrate and the first dielectric layer. The semiconductor device structure further includes a second dielectric layer beside the first metal gate stack and an insulating structure over the substrate. A portion of the insulating structure is between the first metal gate stack and the second metal gate stack. The insulating structure penetrates into the second dielectric layer.

Abstract: A method includes providing a substrate having a first region and a second region, forming a fin protruding from the first region, where the fin includes a first SiGe layer and a stack alternating Si layers and second SiGe layers disposed over the first SiGe layer and the first SiGe layer has a first concentration of Ge and each of the second SiGe layers has a second concentration of Ge that is greater than the first concentration, recessing the fin to form an S/D recess, recessing the first SiGe layer and the second SiGe layers exposed in the S/D recess, where the second SiGe layers are recessed more than the first SiGe layer, forming an S/D feature in the S/D recess, removing the recessed first SiGe layer and the second SiGe layers to form openings, and forming a metal gate structure over the fin and in the openings.

Abstract: The present invention provides a method for preparing an activated carbon, which includes impregnating a carbonaceous material with carbonated water; and exposing the carbonaceous material to microwave radiation to produce the activated carbon.

Abstract: SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of transistors at scaled IC technology nodes and relax limits on SRAM performance optimization imposed by FinFET-based SRAMs. GAA-based SRAM cells described have active region layouts with active regions shared by pull-down GAA transistors and pass-gate GAA transistors. A width of shared active regions that correspond with the pull-down GAA transistors are enlarged with respect to widths of the shared active regions that correspond with the pass-gate GAA transistors. A ratio of the widths is tuned to obtain ratios of pull-down transistor effective channel width to pass-gate effective channel width greater than 1, increase an on-current of pull-down GAA transistors relative to an on-current of pass-gate GAA transistors, decrease a threshold voltage of pull-down GAA transistors relative to a threshold voltage of pass-gate GAA transistors, and/or increases a ? ratio of an SRAM cell.

Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.

Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: A machine learning method and a machine learning device are provided. The machine learning method includes: receiving an input signal and performing normalization on the input signal; transmitting the normalized input signal to a convolutional layer; and adding a sparse coding layer after the convolutional layer, wherein the sparse coding layer uses dictionary atoms to reconstruct signals on a projection of the normalized input signal passing through the convolutional layer, and the sparse coding layer receives a mini-batch input to refresh the dictionary atoms.

Abstract: A machine learning method and a machine learning device are provided. The machine learning method includes: receiving an input signal and performing normalization on the input signal; transmitting the normalized input signal to a convolutional layer; and adding a sparse coding layer after the convolutional layer, wherein the sparse coding layer uses dictionary atoms to reconstruct signals on a projection of the normalized input signal passing through the convolutional layer, and the sparse coding layer receives a mini-batch input to refresh the dictionary atoms.

Abstract: A spindle motor inclination angle adjusting mechanism for an optical disk device includes two adjusting mechanisms to provide two rotational freedom for the base dock of the spindle motor to adjust the inclination angle of the spindle motor. The first adjusting mechanism has three support points that are not on the same straight line to support the base dock. Two of the support points are fixed and the third support point is movable relative to the other two support points to change the inclination angle of the base dock of the spindle motor. The second adjusting mechanism is a rotary element for carrying the first adjusting mechanism and driving the first adjusting mechanism to rotate and change the direction of the inclination angle of the base dock to adjust the spindle motor inclination angle.

Abstract: A disc for storing information is provided. The present disc includes a fixture and a storage element. The thickness of the fixture in the present invention is thicker than that of the fixture of the prior art.

Abstract: A disc for storing information is provided. The present disc includes a fixture and a storage element. The diameter of the present fixture is longer than that of the fixture of the prior art. The thickness of the fixture in the present invention is thicker than that of the fixture of the prior art.

Abstract: A dynamic vibration reduction system, applicable in an electronic product, includes a main buffering unit, an auxiliary buffering unit, and a driving module. The main buffering unit is connected to a carrier of the electronic product to reduce vibrations of the carrier. The auxiliary buffering unit is movably mounted on one side of the carrier. The driving module is assembled in the auxiliary buffering unit to either abut the auxiliary buffering unit against the carrier and reduce the vibration of the carrier, or space the auxiliary buffering unit away from the carrier at a predetermined distance. The vibration reduction of a system is variable with the control of the connection between the auxiliary buffering unit and the carrier to maximize the performance of the electronic product.

Abstract: A spindle motor inclination angle adjusting mechanism for an optical disk device includes two adjusting mechanisms to provide two rotational freedom for the base dock of the spindle motor to adjust the inclination angle of the spindle motor. The first adjusting mechanism has three support points that are not on the same straight line to support the base dock. Two of the support points are fixed and the third support point is movable relative to the other two support points to change the inclination angle of the base dock of the spindle motor. The second adjusting mechanism is a rotary element for carrying the first adjusting mechanism and driving the first adjusting mechanism to rotate and change the direction of the inclination angle of the base dock to adjust the spindle motor inclination angle.

Abstract: A disc clamp mechanism for preventing a disc (e.g., DVD-ROM or CD-ROM) from slipping and/or loosening in a high speed rotation comprises a positioning member sized to the center hole of the disc having a hole for being mounted on a turntable, and an inclined surface; a helical spring within the positioning member; a disc-clamping member sized to the center hole of the compact disc having circumferential raised portions, recessed portions each extending from the raised portion, and flexible V-shaped members surrounded by two recessed portions and a raised portion; and an elastic plane-like member mounted on the positioning member. As such, the disc is secured by the raised portions, the inclined surface, and the turntable when loaded onto the disc-clamping member. This mechanism finds applications in the DVD-ROM or CD-ROM products. Further, a thinner construction, an easy assembly, and a high positioning precision are realized by this mechanism.