Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a first pattern and a second pattern. The first pattern is disposed on the substrate. The first pattern includes a first segment and a second segment, each of which extends along a first direction. The second pattern is disposed on the first pattern. The second pattern includes a first part extending along a second direction different from the first direction. The first part of the second pattern overlaps the first segment and the second segment along a third direction different from the first direction and the second direction. The first pattern and the second pattern are associated with an overlay error.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a first pattern and a second pattern. The first pattern is disposed on the substrate. The first pattern includes a first segment and a second segment, each of which extends along a first direction. The second pattern is disposed on the first pattern. The second pattern includes a first part extending along a second direction different from the first direction. The first part of the second pattern overlaps the first segment and the second segment along a third direction different from the first direction and the second direction. The first pattern and the second pattern are associated with an overlay error.

Abstract: The present application discloses a semiconductor device with a contact structure. The semiconductor device includes a bottom dielectric layer positioned on a substrate; a bottom conductive layer positioned in the bottom dielectric layer; an etch stop layer positioned on the bottom conductive layer; a first inter-dielectric layer positioned on the etch stop layer; and a contact structure including a body portion positioned along the first inter-dielectric layer and extending to the etch stop layer, and a contact portion positioned in the etch stop layer to and contacting the body portion and the bottom conductive layer. A width of the body portion is greater than a width of the contact portion.

Abstract: The present disclosure provides a method for fabricating a semiconductor device including providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate, wherein the translucent layer includes a mask opening of contact portion which exposes a portion of the mask substrate; providing a stack structure including an etch stop layer on a bottom conductive layer and a first inter-dielectric layer on the etch stop layer, and forming a pre-process mask layer on the stack structure; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the opaque layer, a region of body portion corresponding to the translucent layer, and a hole of contact portion corresponding to the mask opening of contact portion.

Abstract: The present disclosure provides a method for fabricating a photomask. The method includes providing a mask substrate; forming an opaque layer on the mask substrate; pattern-writing the opaque layer to form a mask opening of trench feature in the opaque layer and expose the mask substrate; forming a translucent layer in the mask opening of trench feature to cover the mask substrate; and pattern-writing the translucent layer to form a mask opening of via feature to expose a portion of the mask substrate.