Patents by Inventor Chih-Hsuen Chou

Chih-Hsuen Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode
    Patent number: 9130122
    Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: September 8, 2015
    Assignees: Industrial Technology Research Institute, WALSIN LIHWA Corp
    Inventors: Yi-Keng Fu, Chia-Lung Tsai, Hung-Tse Chen, Chih-Hsuen Chou
  • LIGHT EMITTING DIODE
    Publication number: 20150069321
    Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
    Type: Application
    Filed: February 17, 2014
    Publication date: March 12, 2015
    Applicants: Industrial Technology Research Institute, Walsin Lihwa Corp
    Inventors: Yi-Keng Fu, Chia-Lung Tsai, Hung-Tse Chen, Chih-Hsuen Chou