Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: An oscillating device includes a first quartz crystal resonator, a driving circuit, a first waveform adjustment circuit, and at least two second quartz crystal resonators. The first quartz crystal resonator has a first resonant frequency. The driving circuit, coupled to the first quartz crystal resonator, drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The second quartz crystal resonators, coupled in parallel and coupled to the driving circuit and the first quartz crystal resonator, have a second resonant frequency and receive and rectify the first oscillating signal to generate a second oscillating signal having the second resonant frequency. The first waveform adjustment circuit, coupled to the second quartz crystal resonators, receives the second oscillating signal and adjusts the second oscillating signal to generate a first waveform adjustment signal.

Abstract: An oscillating device includes a first quartz crystal resonator, a driving circuit, a first waveform adjustment circuit, and at least two second quartz crystal resonators. The first quartz crystal resonator has a first resonant frequency. The driving circuit, coupled to the first quartz crystal resonator, drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The second quartz crystal resonators, coupled in parallel and coupled to the driving circuit and the first quartz crystal resonator, have a second resonant frequency and receive and rectify the first oscillating signal to generate a second oscillating signal having the second resonant frequency. The first waveform adjustment circuit, coupled to the second quartz crystal resonators, receives the second oscillating signal and adjusts the second oscillating signal to generate a first waveform adjustment signal.

Abstract: An oscillating device includes a first quartz crystal resonator, a driving circuit, a first buffer, an attenuator, a second quartz crystal resonator, and a second buffer. The first quartz crystal resonator and the second quartz crystal resonator respectively have a first resonant frequency and a second resonant frequency. The driving circuit drives the first quartz crystal resonator to generate a first oscillating signal having the first resonant frequency. The first buffer generates a first clock signal in response to the first oscillating signal. The attenuator reduces the wave swing of the first clock signal to generate an attenuated signal. The second quartz crystal resonator rectifies the attenuated signal to generate a second oscillating signal having the second resonant frequency. The second buffer generates a second clock signal in response to the second oscillating signal.

Abstract: A white flip chip light emitting diode (FC LED) includes a flip chip (LED) die configured to emit electromagnetic radiation; reflective sidewalls on the (LED) die; and a wavelength conversion member having a uniform thickness and a surface area greater than or equal to a footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. A method for fabricating the white flip chip light emitting diode (FC LED) includes the steps of: providing the flip chip (LED) die; forming reflective sidewalls on the flip chip (LED) die; and forming a wavelength conversion member on the flip chip (LED) die.