Patents by Inventor Chih-Hsun LU

Chih-Hsun LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20250038067
    Abstract: A semiconductor device includes a substrate, a memory component and a heat dissipation component. The memory component is disposed on the substrate. The heat dissipation component is disposed on the substrate. The heat dissipation component has a thermal conductivity greater than that of silicon.
    Type: Application
    Filed: July 26, 2024
    Publication date: January 30, 2025
    Applicants: nD-HI Technologies Lab, Inc., ETRON TECHNOLOGY, INC.
    Inventors: Ho-Ming Tong, Chih-Hsun HSIEH, Chao-Chun LU
  • High-voltage circuitry device and ring circuitry layout thereof
    Patent number: 11302686
    Abstract: A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: April 12, 2022
    Assignee: Nuvoton Technology Corporation
    Inventors: Yi-Hao Chen, Tsu-Yi Wu, Chih-Hsun Lu, Po-An Chen, Chun-Chieh Liu
  • HIGH-VOLTAGE CIRCUITRY DEVICE AND RING CIRCUITRY LAYOUT THEREOF
    Publication number: 20210035969
    Abstract: A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.
    Type: Application
    Filed: November 18, 2019
    Publication date: February 4, 2021
    Inventors: Yi-Hao CHEN, Tsu-Yi WU, Chih-Hsun LU, Po-An CHEN, Chun-Chieh LIU