Patents by Inventor Chih-hua Liang

Chih-hua Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120337
    Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.
    Type: Application
    Filed: January 15, 2023
    Publication date: April 11, 2024
    Inventors: Ta-Chun LIN, Chih-Hung HSIEH, Chun-Sheng LIANG, Wen-Chiang HONG, Chun-Wing YEUNG, Kuo-Hua PAN, Chih-Hao CHANG, Jhon Jhy LIAW
  • Publication number: 20240079447
    Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.
    Type: Application
    Filed: February 3, 2023
    Publication date: March 7, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ta-Chun LIN, Chun-Sheng LIANG, Kuo-Hua PAN, Chih-Hao CHANG, Jhon-Jhy LIAW
  • Publication number: 20180239351
    Abstract: A autonomous mobile device includes a body, two LiDAR devices, a CPU, a control terminal and an image detector. The body includes a front end and a back end. The two Light Detection and Ranging (LiDAR) devices are separately located on the front end and the back end. The CPU is used to control operation of two LiDAR devices. The control terminal is used to receive information from the CPU and control movement of the autonomous mobile device. The image detector is used to detect image information around the autonomous mobile device.
    Type: Application
    Filed: December 26, 2017
    Publication date: August 23, 2018
    Inventor: CHIH-HUA LIANG
  • Patent number: 8439800
    Abstract: A shift control system for a marine drive applies partial clutch engagement pressure upon initial shifting from forward to reverse to prevent stalling of the engine otherwise caused by applying full clutch engagement pressure upon shifting from forward to reverse.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: May 14, 2013
    Assignee: Brunswick Corporation
    Inventors: Andrew H. Bazan, Kyle M. Miller, William J. Samples, Doyle E. Whittington, Jr., Chih-hua Liang