Abstract: A photosensor device and the method of making the same are provided. In one embodiment, the device includes at least one pixel cell. The at least one pixel cell includes a substrate formed from a semiconductor material, and includes first and second photosensor regions. The first photosensor region is disposed in the substrate and includes a first dopant of a first conductivity type. The second photosensor region is disposed above the first photosensor region and includes a second dopant of a second conductivity type. The second photosensor region can have an increase in dopant concentration from an outer edge to a center portion therein.

Abstract: A photosensor device and the method of making the same are provided. In one embodiment, the device includes at least one pixel cell. The at least one pixel cell includes a substrate formed from a semiconductor material, and includes first and second photosensor regions. The first photosensor region is disposed in the substrate and includes a first dopant of a first conductivity type. The second photosensor region is disposed above the first photosensor region and includes a second dopant of a second conductivity type. The second photosensor region can have an increase in dopant concentration from an outer edge to a center portion therein.

Abstract: A photosensor device and the method of making the same are provided. In one embodiment, the device includes at least one pixel cell. The at least one pixel cell includes a substrate formed from a semiconductor material, and includes first and second photosensor regions. The first photosensor region is disposed in the substrate and includes a first dopant of a first conductivity type. The second photosensor region is disposed above the first photosensor region and includes a second dopant of a second conductivity type. The second photosensor region can have an increase in dopant concentration from an outer edge to a center portion therein.

Abstract: A photosensor device and the method of making the same are provided. In one embodiment, the device includes at least one pixel cell. The at least one pixel cell includes a substrate formed from a semiconductor material, and includes first and second photosensor regions. The first photosensor region is disposed in the substrate and includes a first dopant of a first conductivity type. The second photosensor region is disposed above the first photosensor region and includes a second dopant of a second conductivity type. The second photosensor region can have an increase in dopant concentration from an outer edge to a center portion therein.

Abstract: A method for forming an image sensor device on a substrate is disclosed. The method includes (a) recessing a portion of the substrate thereby forming a first shallow trench; (b) forming a spacer layer surrounding at least part of a sidewall of the first shallow trench; and (c) forming a first deep trench that extends below the first shallow trench by further recessing the substrate while using the spacer layer as a mask.

Abstract: A method for forming a backside illuminated (BSI) image sensor device structure is provided. The BSI image sensor includes a first substrate having a top surface and a bottom surface, and a plurality of pixel regions formed at the top surface of the first substrate. The BSI image sensor also includes a grid structure through the first substrate and between two adjacent pixel regions. The grid structure extends continuously through the first substrate in a vertical direction and has a top surface and a bottom surface, the top surface of the grid structure protrudes above the bottom surface of the first substrate, and the bottom surface is leveled with the top surface of the first substrate.

Abstract: A method for forming an image sensor device on a substrate is disclosed. The method includes (a) recessing a portion of the substrate thereby forming a first shallow trench; (b) forming a spacer layer surrounding at least part of a sidewall of the first shallow trench; and (c) forming a first deep trench that extends below the first shallow trench by further recessing the substrate while using the spacer layer as a mask.

Abstract: A method for forming a backside illuminated (BSI) image sensor device structure is provided. The BSI image sensor includes a first substrate having a top surface and a bottom surface, and a plurality of pixel regions formed at the top surface of the first substrate. The BSI image sensor also includes a grid structure through the first substrate and between two adjacent pixel regions. The grid structure extends continuously through the first substrate in a vertical direction and has a top surface and a bottom surface, the top surface of the grid structure protrudes above the bottom surface of the first substrate, and the bottom surface is leveled with the top surface of the first substrate.