Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.

Abstract: A semiconductor machine and a cleaning process are provided. The semiconductor machine includes a chamber and a cleaning module. The cleaning process includes the following steps. Firstly, the semiconductor machine is used to perform a semiconductor manufacturing process, wherein a titanium-based material is etched in the semiconductor manufacturing process. Then, a cleaning task is activated to clean the semiconductor machine by using a cleaning agent including a gas mixture of a fluoride compound and oxygen.