Patents by Inventor Chih-Hui Weng

Chih-Hui Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12271113
    Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Cheng Liu, Yi-Chen Kuo, Jia-Lin Wei, Ming-Hui Weng, Yen-Yu Chen, Jr-Hung Li, Yahru Cheng, Chi-Ming Yang, Tze-Liang Lee, Ching-Yu Chang
  • Patent number: 12272554
    Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Lin Wei, Ming-Hui Weng, Chih-Cheng Liu, Yi-Chen Kuo, Yen-Yu Chen, Yahru Cheng, Jr-Hung Li, Ching-Yu Chang, Tze-Liang Lee, Chi-Ming Yang
  • Patent number: 12222643
    Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
    Type: Grant
    Filed: October 22, 2022
    Date of Patent: February 11, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Cheng Liu, Ming-Hui Weng, Jr-Hung Li, Yahru Cheng, Chi-Ming Yang, Tze-Liang Lee, Ching-Yu Chang
  • Patent number: 11726747
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Publication number: 20230115281
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Application
    Filed: December 9, 2022
    Publication date: April 13, 2023
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Patent number: 11531524
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Patent number: 11249131
    Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Chia Yu Wang, Meng-Chun Shih, Ching-Huang Wang, Chih-Yang Chang, Chia-Hsiang Chen, Chih-Hui Weng
  • Publication number: 20210311105
    Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 7, 2021
    Inventors: HARRY-HAK-LAY CHUANG, TIEN-WEI CHIANG, CHIA YU WANG, MENG-CHUN SHIH, CHING-HUANG WANG, CHIH-YANG CHANG, CHIA-HSIANG CHEN, CHIH-HUI WENG
  • Publication number: 20200097255
    Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.
    Type: Application
    Filed: June 7, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Chih-Hui Weng, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang, Chia-Hsiang Chen
  • Patent number: 8809202
    Abstract: Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: August 19, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hui Weng, Wei-Sheng Yun, Shao-Ming Yu, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20130210212
    Abstract: Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.
    Type: Application
    Filed: February 14, 2012
    Publication date: August 15, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hui Weng, Wei-Sheng Yun, Shao-Ming Yu, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann