Patents by Inventor Chih Hung Tseng
Chih Hung Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105775Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.Type: ApplicationFiled: February 9, 2023Publication date: March 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Yu CHIANG, Hsiao-Han LIU, Yuan-Hung TSENG, Chih-Yung LIN
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Patent number: 11935804Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.Type: GrantFiled: April 10, 2023Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
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Publication number: 20240088307Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
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Patent number: 11929318Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.Type: GrantFiled: May 10, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
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Patent number: 11929767Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.Type: GrantFiled: August 16, 2022Date of Patent: March 12, 2024Assignee: MEDIATEK INC.Inventors: Chieh-Hsun Hsiao, Ming-Chou Wu, Wen-Chang Lee, Narayanan Baskaran, Wei-Hsin Tseng, Jenwei Ko, Po-Sen Tseng, Hsin-Hung Chen, Chih-Yuan Lin, Caiyi Wang
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Publication number: 20240079051Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.Type: ApplicationFiled: November 8, 2022Publication date: March 7, 2024Applicant: Industrial Technology Research InstituteInventors: Chih-Sheng Lin, Tuo-Hung Hou, Fu-Cheng Tsai, Jian-Wei Su, Kuo-Hua Tseng
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Patent number: 11260933Abstract: A shock-absorbing front fork assembly of a motorcycle includes a front fork, a pressure buffering cylinder and a control valve disposed between the front fork and the pressure buffering cylinder and electrically connected with a brake system to control the communication between the front fork and the pressure buffering cylinder according to the operation of the brake system. When the brake system is not actuated, the control valve is open to make the front fork communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively smaller. When the brake system is actuated, the control valve is close to make the front fork not communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively larger. Therefore, the spring supporting force is adjusted by the brake operation, that raises the riding comfort and safety.Type: GrantFiled: October 25, 2019Date of Patent: March 1, 2022Inventor: Chih-Hung Tseng
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Patent number: 10734551Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: October 21, 2019Date of Patent: August 4, 2020Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20200140032Abstract: A shock-absorbing front fork assembly of a motorcycle includes a front fork, a pressure buffering cylinder and a control valve disposed between the front fork and the pressure buffering cylinder and electrically connected with a brake system to control the communication between the front fork and the pressure buffering cylinder according to the operation of the brake system. When the brake system is not actuated, the control valve is open to make the front fork communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively smaller. When the brake system is actuated, the control valve is close to make the front fork not communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively larger. Therefore, the spring supporting force is adjusted by the brake operation, that raises the riding comfort and safety.Type: ApplicationFiled: October 25, 2019Publication date: May 7, 2020Inventor: Chih-Hung TSENG
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Publication number: 20200052159Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: October 21, 2019Publication date: February 13, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: 10453999Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: May 16, 2018Date of Patent: October 22, 2019Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20180261727Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: May 16, 2018Publication date: September 13, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20180248078Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.Type: ApplicationFiled: April 30, 2018Publication date: August 30, 2018Inventors: Yu-Chen Kuo, Teng-Hsien Lai, Kai-Shun Kang, Yan-Ting Lan, Jing-En Huang, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20160329461Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: April 22, 2016Publication date: November 10, 2016Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20160315238Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.Type: ApplicationFiled: April 22, 2016Publication date: October 27, 2016Inventors: Yu-Chen Kuo, Teng-Hsien Lai, Kai-Shun Kang, Yan-Ting Lan, Jing-En Huang, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: 9414890Abstract: A cart includes a main body, wheels, first drawers, at least one collecting bin and at least one driving unit. The wheels are disposed on the bottom of the main body. The first drawers are contained in a front space of the main body and are configured to be pulled out of the main body via a front surface thereof. The collecting bin is contained in a rear space of the main body. The collecting bin has an opening and an accommodation space communicated with the opening. The opening is located in the rear space such that the accommodation space is not exposed to the outside of the main body. The driving unit is coupled to the collecting bin and configured to receive an external triggering to turn the collecting bin out of the main body via a rear surface thereof, to expose the opening and the accommodation space.Type: GrantFiled: March 10, 2015Date of Patent: August 16, 2016Assignee: MELTEN corporationInventors: Fang-Chi Wu, Chih-Hung Tseng
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Publication number: 20160153909Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.Type: ApplicationFiled: February 5, 2016Publication date: June 2, 2016Inventors: Cheng-Pin Chen, Yun-Li Li, Shou-Wen Hsu, Chih-Hung Tseng, Pei-Yi Huang, Ching-Cheng Sun, Tsung-Syun Huang, Yung-Tsung Lin, Ping-Tsung Tsai
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Publication number: 20160015455Abstract: A cart includes a main body, wheels, first drawers, at least one collecting bin and at least one driving unit. The wheels are disposed on the bottom of the main body. The first drawers are contained in a front space of the main body and are configured to be pulled out of the main body via a front surface thereof. The collecting bin is contained in a rear space of the main body. The collecting bin has an opening and an accommodation space communicated with the opening. The opening is located in the rear space such that the accommodation space is not exposed to the outside of the main body. The driving unit is coupled to the collecting bin and configured to receive an external triggering to turn the collecting bin out of the main body via a rear surface thereof, to expose the opening and the accommodation space.Type: ApplicationFiled: March 10, 2015Publication date: January 21, 2016Inventors: Fang-Chi Wu, Chih-Hung Tseng
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Patent number: D887311Type: GrantFiled: March 19, 2019Date of Patent: June 16, 2020Assignee: Karma Medical Products Co., LTD.Inventors: Li-Wei Wu, Chih-Hung Tseng, Wei-Lin Hsieh, Tsung-Ching Li, Chien-Hung Wu
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Patent number: D887313Type: GrantFiled: March 18, 2019Date of Patent: June 16, 2020Assignee: Karma Medical Products Co., LTD.Inventors: Li-Wei Wu, Chih-Hung Tseng, Wei-Lin Hsieh, Tsung-Ching Li, Chien-Hung Wu