Abstract: A shock-absorbing front fork assembly of a motorcycle includes a front fork, a pressure buffering cylinder and a control valve disposed between the front fork and the pressure buffering cylinder and electrically connected with a brake system to control the communication between the front fork and the pressure buffering cylinder according to the operation of the brake system. When the brake system is not actuated, the control valve is open to make the front fork communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively smaller. When the brake system is actuated, the control valve is close to make the front fork not communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively larger. Therefore, the spring supporting force is adjusted by the brake operation, that raises the riding comfort and safety.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A shock-absorbing front fork assembly of a motorcycle includes a front fork, a pressure buffering cylinder and a control valve disposed between the front fork and the pressure buffering cylinder and electrically connected with a brake system to control the communication between the front fork and the pressure buffering cylinder according to the operation of the brake system. When the brake system is not actuated, the control valve is open to make the front fork communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively smaller. When the brake system is actuated, the control valve is close to make the front fork not communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively larger. Therefore, the spring supporting force is adjusted by the brake operation, that raises the riding comfort and safety.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface.

Abstract: A cart includes a main body, wheels, first drawers, at least one collecting bin and at least one driving unit. The wheels are disposed on the bottom of the main body. The first drawers are contained in a front space of the main body and are configured to be pulled out of the main body via a front surface thereof. The collecting bin is contained in a rear space of the main body. The collecting bin has an opening and an accommodation space communicated with the opening. The opening is located in the rear space such that the accommodation space is not exposed to the outside of the main body. The driving unit is coupled to the collecting bin and configured to receive an external triggering to turn the collecting bin out of the main body via a rear surface thereof, to expose the opening and the accommodation space.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: A cart includes a main body, wheels, first drawers, at least one collecting bin and at least one driving unit. The wheels are disposed on the bottom of the main body. The first drawers are contained in a front space of the main body and are configured to be pulled out of the main body via a front surface thereof. The collecting bin is contained in a rear space of the main body. The collecting bin has an opening and an accommodation space communicated with the opening. The opening is located in the rear space such that the accommodation space is not exposed to the outside of the main body. The driving unit is coupled to the collecting bin and configured to receive an external triggering to turn the collecting bin out of the main body via a rear surface thereof, to expose the opening and the accommodation space.

Abstract: A dimming system is composed of a dimmer having switchable power modes and at least one lighting device. When the dimmer is in a non-dimming bypass mode, an input power is directly transmitted to the at least one lighting device with the dimmer being bypassed so that the circuit in the dimmer consumes no power. When the dimmer is in a dimming mode, an output selector of the dimmer outputs a dimming output power having a dimming command therein to each one of the at least one lighting device for each lighting device to decode the dimming command embedded in the dimming output power and perform a dimming operation according to the dimming command. As the dimming operation lasts briefly, the power consumed by the dimmer is extremely small. Accordingly, no heat dissipation issue arises and the present invention is applicable to all sorts of high power lighting devices.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).

Abstract: A dimming system is composed of a dimmer having switchable power modes and at least one lighting device. When the dimmer is in a non-dimming bypass mode, an input power is directly transmitted to the at least one lighting device with the dimmer being bypassed so that the circuit in the dimmer consumes no power. When the dimmer is in a dimming mode, an output selector of the dimmer outputs a dimming output power having a dimming command therein to each one of the at least one lighting device for each lighting device to decode the dimming command embedded in the dimming output power and perform a dimming operation according to the dimming command. As the dimming operation lasts briefly, the power consumed by the dimmer is extremely small. Accordingly, no heat dissipation issue arises and the present invention is applicable to all sorts of high power lighting devices.

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract: A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).