Patents by Inventor Chih-Huo Wu

Chih-Huo Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic random access memory
    Patent number: 7466585
    Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: December 16, 2008
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Huo Wu, Chih-Huang Lai, Yu-Jen Wang, Denny Tang
  • Magnetic random access memory
    Publication number: 20070253244
    Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
    Type: Application
    Filed: April 28, 2006
    Publication date: November 1, 2007
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Huo Wu, Chih-Huang Lai, Yu-Jen Wang, Denny Tang