Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include forming a stack over a substrate, forming a fin-shape structure from patterning the stack and the substrate, recessing the fin-shape structure to form a source/drain trench, depositing a dielectric film in the source/drain trench with a top surface below a top surface of the substrate in the fin-shape structure, and forming an epitaxial feature over the dielectric film. A bottom surface of the epitaxial feature is below the top surface of the substrate in the fin-shape structure.

Abstract: A display device includes: a display panel including a first substrate with a first surface and a second substrate disposed on the first surface; a third substrate, wherein the second substrate is disposed between the first substrate and the third substrate, and the third substrate has a second surface facing the first surface; an adhesion element disposed on the first surface and adjacent to the second substrate, wherein the adhesion element has a first through hole; and a filler disposed in the first through hole and in contact with the first surface and the second surface. The first through hole of the adhesion element has an area defined as a first area, the filler has a region in contact with the second surface, and an area of the region is defined as a second area. The ratio of the first area to the second area ranges from 0.5 to 0.99.

Abstract: A display device includes: a display panel including a first substrate with a first surface and a second substrate disposed on the first surface; a third substrate, wherein the second substrate is disposed between the first substrate and the third substrate, and the third substrate has a second surface facing the first surface; an adhesion element disposed on the first surface and adjacent to the second substrate, wherein the adhesion element has a first through hole; and a filler disposed in the first through hole and in contact with the first surface and the second surface. The first through hole of the adhesion element has an area defined as a first area, the filler has a region in contact with the second surface, and an area of the region is defined as a second area. The ratio of the first area to the second area ranges from 0.5 to 0.99.

Abstract: A memory heat sink device having an enlarged heat dissipating area is provided. The memory heat sink device includes two cooling fins that are respectively attached to a front side and a back side of a memory. Raised dots are protruded from a front (or back) side of the cooling fin attached to the front (or back) side of the memory. Each of the raised dots on the cooling fin has at least one sectional area and at least one connection portion. Thus, the heat sink area of the cooling fin increases and heat generated by the memory is easily dissipated by the sectional area through thermal convection.

Abstract: A memory heat sink device provided with an extra heat sink area includes two cooling fins that are respectively attached to the front and back sides of a memory. A plurality of raised dots that protrude toward the front side are formed on the cooling fin attached to the front side of the memory. Each of the raised dots and the cooling fin has at least one sectional area and one connection portion. Thus, the heat sink area of cooling fin increases and the sectional area is used to easily dissipate heat generated by the memory in the manner of convection.