Abstract: A sweep voltage generator and a display panel are provided. The sweep voltage generator includes an output node, a current generating block and a voltage regulating block. The output node is used to provide a sweep signal. The current generating block is coupled to the output node, includes a detection path for detecting an output load variation on the output node, and adjusts the sweep signal provided by the output node based on the output load variation. The voltage regulating block is coupled to the output node for regulating a voltage of the output node.

Abstract: A method for processing a semiconductor wafer is provided. The method includes polishing the semiconductor wafer with a chemical mechanical polishing (CMP) tool. The method includes transferring the polished semiconductor wafer to an interface tool from the CMP tool. The method includes discharging a mist spray over the polished semiconductor wafer in the interface tool. The method includes transferring the semiconductor wafer form the interface tool to a cleaning tool for a cleaning process.

Abstract: A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

Abstract: A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

Abstract: A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer from an interface tool to a Chemical Mechanical Polishing (CMP) tool. The method further includes polishing the semiconductor wafer with the CMP tool. The method also includes transferring the semiconductor wafer back to the interface tool from the CMP tool. In addition, the method includes converting a mixture to a mist spray and discharging the mist spray over the semiconductor wafer in the interface tool after the semiconductor wafer is polished by the CMP tool.

Abstract: A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer from an interface tool to a Chemical Mechanical Polishing (CMP) tool. The method further includes polishing the semiconductor wafer with the CMP tool. The method also includes transferring the semiconductor wafer back to the interface tool from the CMP tool. In addition, the method includes converting a mixture to a mist spray and discharging the mist spray over the semiconductor wafer in the interface tool after the semiconductor wafer is polished by the CMP tool.

Abstract: A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.

Abstract: Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

Abstract: A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof.

Abstract: Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.

Abstract: An apparatus and a method for off-line pre-conditioning a conditioning disc that is used in a chemical mechanical polishing process are provided. In the apparatus, an upper platform for mounting a conditioning disc thereto and a lower platform for mounting a polishing pad thereto are engaged together under a pre-set pressure and rotated in opposite directions for a pre-set length of time. The apparatus is effective in removing loose particles from the surface of the conditioning disc such that the possibility of any such particles causing scratches on a wafer surface during a subsequently conducted chemical mechanical polishing process is eliminated. The present invention novel apparatus can be used off-line for pre-conditioning a conditioning disc such that valuable machine time of a chemical mechanical polishing apparatus is not wasted.

Abstract: The present invention discloses a contamination prevention system and method of use having a contamination prevention shield that cooperates with a high pressure rinse apparatus to prevent contamination of particles within a CMP apparatus. The contamination prevention shield has a cleaning cup, two vertical side shields, a front vertical shield, and a floor that cooperate to prevent leakage of fluid splattered during a high pressure rinse of the CMP apparatus and an interior portion of a CMP apparatus housing; and a high pressure rinse apparatus connected to the contamination prevention shield having a conduit with at least one nozzle for dispensing cleaning fluid during a high pressure rinse cycle. Additionally, a plurality of contamination prevention shields may be used in combination with the high pressure rinse apparatus to further prevent contamination of an interior portion of the housing and the CMP apparatus.

Abstract: The present invention discloses a contamination prevention system and method of use having a contamination prevention shield that cooperates with a high pressure rinse apparatus to prevent contamination of particles within a CMP apparatus. The contamination prevention shield has a cleaning cup, two vertical side shields, a front vertical shield, and a floor that cooperate to prevent leakage of fluid splattered during a high pressure rinse of the CMP apparatus and an interior portion of a CMP apparatus housing; and a high pressure rinse apparatus connected to the contamination prevention shield having a conduit with at least one nozzle for dispensing cleaning fluid during a high pressure rinse cycle. Additionally, a plurality of contamination prevention shields may be used in combination with the high pressure rinse apparatus to further prevent contamination of an interior portion of the housing and the CMP apparatus.

Abstract: A conformal disk holder for holding a rotating disk against a surface of a polishing pad is described. The conformal disk holder can be used for any polishing apparatus, but is particularly suited for use in a CMP pad conditioning disk. The conformal disk holder is constructed by a cover member, a flexural plate member and a base member. The flexural plate member has a center protrusion with a downwardly facing convex surface for intimately engaging an upwardly facing concave surface on a center protrusion of the base member. The intimate engagement between the convex surface and the concave surface allows at least a 5° tilt of the base member from a horizontal plane, and preferably allows a tilt between about 5° and about 30°.

Abstract: An apparatus and a method for removing an adhesive bonded pad from a backing plate are disclosed. The apparatus and the method are particularly suitable for removing a polishing pad in a chemical mechanical polishing apparatus, however, they can be used for removal of any other adhesively bonded pad on a rigid surface. The removal apparatus can be advantageously used without causing any danger to a machine operator even when a slippage of the tool has occurred. The T-shaped removal tool can be operated in a rotational motion such that an adhesive bond existed between a pad and a backing surface may be broken by shear force. A minimal amount of force is required due to the large T-shaped handle used for the removal operation.