Patents by Inventor Chih Jung Lee

Chih Jung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200237938
    Abstract: The present invention provides a radioactive labeling method for neuropeptide Y (NPY) compound and a mammalian diagnostic radioactive targeting medicine with NPY peptide being modified at position 27th to 36th, and after binding with the chelating agent and labeling the radiation nucleus 66Ga, 67Ga, 68Ga, 177Lu or 111In to provide a radioactive targeting medicine for multi-type breast cancer diagnosis and treatment.
    Type: Application
    Filed: December 11, 2018
    Publication date: July 30, 2020
    Inventors: Ming-Hsin Li, Su-Jung Chen, Ming-Wei Chen, Yuan-Ruei Huang, Shih-Ying Lee, Chun-Fang Feng, Sheng-Nan Lo, Chih-Hsien Chang
  • Publication number: 20200191504
    Abstract: The present disclosure describes a connector assembly for a liquid manifold within a server rack. The connector assembly includes a pipe configured to connect to the liquid manifold. The pipe has a flexible portion configured to accommodate at least one of lateral or vertical manipulation of the pipe while the pipe remains connected to the liquid manifold. The connector assembly further includes a first connector and a second connector configured to form a liquid-tight connection when coupled together. One of the first connector and the second connector is connected to a distal end of the pipe. The other of the first connector and the second connector is configured to connect to a component within the server rack, for supplying coolant from the liquid manifold to the component.
    Type: Application
    Filed: March 7, 2019
    Publication date: June 18, 2020
    Inventors: Chao-Jung CHEN, Chih-Hsiang LEE, Chih-Ming CHEN, Yen-Yu LIU
  • Publication number: 20200176382
    Abstract: A method for fabricating a semiconductor arrangement includes removing a portion of a first dielectric layer to form a first recess defined by sidewalls of the first dielectric layer, forming a first conductive layer in the first recess, removing a portion of the first conductive layer to form a second recess defined by the sidewalls of the first dielectric layer, forming a second conductive layer in the second recess, where the second conductive layer contacts the first conductive layer, forming a second dielectric layer over the second conductive layer, removing a portion of the second dielectric layer to form a third recess defined by sidewalls of the second dielectric layer, where the second conductive layer is exposed through the third recess, and forming a third conductive layer in the third recess, where the third conductive layer contacts the second conductive layer.
    Type: Application
    Filed: November 13, 2019
    Publication date: June 4, 2020
    Inventors: Pin-Wen Chen, Mei-Hui Fu, Hong-Mao Lee, Wei-jung Lin, Chih-Wei Chang
  • Publication number: 20200161708
    Abstract: A battery is provided, which includes an anode and a cathode. The anode includes a first current collector and anode active material. The anode active material is lithium metal or lithium alloy. The cathode includes a second current collector and cathode active material. The battery also includes an electrolyte film disposed between the cathode and the anode, and a porous film disposed between the electrolyte film and the anode. The battery includes an anolyte in the porous film between the electrolyte film and the anode, and a catholyte between the electrolyte film and the cathode. The catholyte is different from the anolyte, and the anolyte and the catholyte are separated by the electrolyte film and are not in contact with each other.
    Type: Application
    Filed: September 26, 2019
    Publication date: May 21, 2020
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Hsin WU, Chih-Ching CHANG, Han-Jung LI, Jen-Jeh LEE, Chia-Chen FANG
  • Publication number: 20200152763
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
  • Publication number: 20200129646
    Abstract: A radioactive labeled long-acting peptide-targeting pharmaceutical and production method, in which the peptide targeted pharmaceutical is firstly dissolved in a solution, followed by labeling the radioactive at a high temperature, and the dosage of the pharmaceutical with radioactive labeling is expected to be reduced and labeling efficiency is improved, and no further purification by filtration is required, which shortens the preparation process and reduces personnel exposure in the working environment. The radioactive labeled long-acting peptide-targeting pharmaceutical can increase the specific binding capacity of tumors and reduce the non-specific accumulation in normal tissues. It can be applied to the field of tumor and nuclear medicine for diagnosis and treatment of tumors and/or tumor metastases with efficacy and precision treatment.
    Type: Application
    Filed: October 31, 2018
    Publication date: April 30, 2020
    Inventors: Ming-Hsin Li, Chih-Hsien Chang, Su-Jung Chen, Shih-Ying Lee, Sheng-Nan Lo, Ming-Wei Chen, Yuan-Ruei Huang, Chun-Fang Feng, Shih-Wei Lo, Cheng-Hui Chuang
  • Patent number: 10620097
    Abstract: A biological sample processing device includes a base, a purification unit, a metering unit and a first tube. The purification unit is disposed on the base and is configured to purify a sample. The metering unit is disposed on the base and has an inlet, at least one metering trough and an overflow trough. The inlet is connected to the purification unit via the first tube, and the metering trough is connected between the inlet and the overflow trough. The sample from the purification unit is configured to enter the metering unit through the inlet to be moved toward the metering trough, and to be moved toward the overflow trough after the metering trough is filled with the sample.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: April 14, 2020
    Assignee: Industrial Technology Research Institute
    Inventors: Chien-An Chen, Wen-Ching Lee, Tzu-Hui Wu, Pei-Shin Jiang, Ping-Jung Wu, Ruey-Shyan Hong, Hsiao-Jou Chang, Chun-Chieh Huang, Ting-Hsuan Chen, Chih-Lung Lin
  • Publication number: 20200111739
    Abstract: A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Wen CHENG, Wei-Yip LOH, Yu-Hsiang LIAO, Sheng-Hsuan LIN, Hong-Mao LEE, Chun-I TSAI, Ken-Yu CHANG, Wei-Jung LIN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Patent number: 10572070
    Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: February 25, 2020
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Chung-Ren Lao, Yun-Chou Wei, Yin Chen, Hsin-Hui Lee, Hsueh-Jung Lin, Wen-Chih Lu, Ting-Jung Lu
  • Patent number: 10547782
    Abstract: An image sensing apparatus including a light source, an image sensor, at least one lens, and a wavelength selecting device is provided. The light source is configured to emit an illumination light to irradiate an object. The image sensor is configured to receive a light signal from the object and send an image signal corresponding to the light signal. The at least one lens is located on a transmission path of the light signal and between the object and the image sensor. The wavelength selecting device is located on the transmission path of the light signal and between the object and the image sensor. The wavelength selecting device has a first reflector and a second reflector, and a gap exists between the first reflector and the second reflector. The gap is adapted to be adjusted to have a first predetermined optical path length or a second predetermined optical path length.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: January 28, 2020
    Assignee: Industrial Technology Research Institute
    Inventors: Jing-Yuan Lin, Horn-Chin Lee, Chia-Jung Chang, Chih-Hao Hsu
  • Publication number: 20200020593
    Abstract: An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: Chih-Han Lin, Jr-Jung Lin, Chun-Hung Lee
  • Patent number: 10535748
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
  • Patent number: 10524519
    Abstract: An adhesive bra comprised of left and right breast support members where each support member includes a cup portion and a vertically extending strap. The rear facing surface of the cup and strap carry reusable pressure sensitive adhesive for adhering to a wearer's skin.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: January 7, 2020
    Assignee: Ce Soir Lingerie Company, Inc.
    Inventors: Beverly Ann Deal, Rebecca Harmon, Chih Jung Lee, Judy Lee, Kevin Lee
  • Publication number: 20190391701
    Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 26, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Cherng LIAO, Shih-Hao LIU, Wu-Hsi LU, Ming-Cheng LO, Chung-Ren LAO, Yun-Chou WEI, Yin CHEN, Hsin-Hui LEE, Hsueh-Jung LIN, Wen-Chih LU, Ting-Jung LU
  • Patent number: 10504834
    Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Patent number: 10487922
    Abstract: A method and apparatus are described for moving a tray within a confined space while the tray is bounded by a chassis. The movement of the tray is effected by a driven gear moving along a rack. A driving gear for rotating the driven gear is mounted on a handle or integral with a rotatable handle. The handle is rotatable about a pivot mounted on the chassis to provide the driving force to move the driven gear along the rack.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: November 26, 2019
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chao-Jung Chen, Chih-Hsiang Lee, Chih-Wei Lin, Chia-Wei Huang
  • Patent number: 10468308
    Abstract: An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: November 5, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Han Lin, Jr-Jung Lin, Chun-Hung Lee
  • Publication number: 20190306990
    Abstract: A display device is provided. The display device includes a display panel, a flexible circuit board, an integrated circuit, and a conductive layer. The flexible circuit board is electrically connected with the display panel and includes a plurality of conductive wires. The integrated circuit is disposed on the flexible circuit board and has a plurality of bumps. The conductive layer is disposed between the integrated circuit and the flexible circuit board and covers a periphery of the integrated circuit. In addition, the conductive layer includes an adhesive and a plurality of conductive particles distributed in the adhesive. Moreover, the bumps are electrically connected with the conductive wires through the conductive particles.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 3, 2019
    Applicant: Innolux Corporation
    Inventors: Wei-Cheng Chu, Chia-Cheng Liu, Chih-Yuan Lee, Chin-Lung Ting, Tong-Jung Wang
  • Publication number: 20190273147
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Wen CHENG, Cheng-Tung LIN, Chih-Wei CHANG, Hong-Mao LEE, Ming-Hsing TSAI, Sheng-Hsuan LIN, Wei-Jung LIN, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Wei-Yip LOH, Ya-Yi CHENG
  • Publication number: 20190273042
    Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai