Abstract: A heating device includes a heating element, a temperature sensor, a first heat pump element, a first heating block, a second heating block and a controller. The heating element is to receive an energy of the controller and convert the energy into a first thermal energy provided to the first heating block. A sensing result is generated by the temperature sensor according to the first thermal energy. The first heat pump element is to receive the energy of the controller for generating a temperature difference. The first thermal energy is conducted to the first heat pump element for forming a second thermal energy. The second heating block is to receive the second thermal energy. The controller correspondingly outputs the energy to the heating element and the first heat pump element according to the sensing result, and thereby controls the first thermal energy and the temperature difference.

Abstract: A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising receiving an indication that a first memory access operation performed in response to a first memory access command is complete, wherein the first memory access operation is associated with a first CAM entry comprising an identifier of a second CAM entry; identifying the second CAM entry using the indicator, wherein the second CAM entry references a second memory access command; and issuing, to the memory device, the second memory access command.

Abstract: A fabrication system for fabricating an IC is provided which includes a processing tool, a computation device and a FDC system. The processing tool includes an electrode and an RF sensor to execute a semiconductor manufacturing process to fabricate the IC. The RF sensor wirelessly detects the intensity of the RF signal. The computation device extracts statistical characteristics based on the detection of the intensity of the RF signal. The FDC system determines whether or not the intensity of the RF signal meets a threshold value or a threshold range according to the extracted statistical characteristics. When the detected intensity of the RF signal exceeds the threshold value or the threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage.

Abstract: A processing device in a memory sub-system initiates read operations on each of a plurality of segments in a first region of the memory device during a first time interval, wherein at least a subset of the plurality of segments in the first region of the memory device are storing host data. The processing device further receives, as a result of at least one read operation, at least one data signal from a corresponding one of the plurality of segments in the first region of the memory device, and performs a signal calibration operation using the at least one data signal to synchronize one or more relevant signals with a reference clock signal used by the processing device.

Abstract: A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board.

Abstract: An electronic device includes a hysteresis circuit, a voltage divider circuit, a control circuit, and a discharge resistor. The hysteresis circuit has a first threshold voltage and a second threshold voltage. The hysteresis circuit generates a hysteresis voltage according to an output voltage at an output node. The voltage divider circuit generates a divided voltage according to the output voltage and the hysteresis voltage. The control circuit has a reference voltage and monitors the divided voltage. If the divided voltage is lower than the reference voltage, the control circuit will use the discharge resistor to perform a discharging operation to the output voltage at the output node.

Abstract: A computing system and a compressing method for neural network parameters are provided. In the method, multiple neural network parameters are obtained. The neural network parameters are used for a neural network algorithm. Every at least two neural network parameters are grouped into an encoding combination. The number of neural network parameters in each encoding combination is the same. The encoding combinations are compressed with the same compression target bit number. Each encoding combination is compressed independently. The compression target bit number is not larger than a bit number of each encoding combination. Thereby, the storage space can be saved and excessive power consumption for accessing the parameters can be prevented.

Abstract: A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.

Abstract: A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.

Abstract: Methods, systems, and devices for one or more clock domain crossing queues are described. A queue can receive, from a first clock domain, a first command to store data in the queue. The queue can store the data at a first location indicated by a first pointer. The queue can receive, from the first clock domain, a second command to cause the second clock domain to retrieve the data from the queue. The queue can generate, based on receiving the second command, a third command synchronized with a clock of the second clock domain and to cause the second clock domain to retrieve the data. The queue can retrieve the data from the first location in the queue indicated by a second pointer associated with retrieving data based at least in part on generating the third command. The queue can transmit, to the second clock domain, the data.

Abstract: A system can include multiple memory devices and a processing device that is operatively coupled with the memory devices as well as with a controller device, and a sequencer device, where the controller device is configured to perform operations. The operations can include, in response to receiving a potential power loss indication signal, receiving a power fault interrupt detection signal, as well as synchronizing the power fault interrupt detection signal. They can also include sending one or more memory access commands to the sequencer device. The operations can also include executing the one or more memory access commands on a medium and stopping transmission of commands based on a power loss handling setting while executing the commands.

Abstract: A request to program a set of host data items to management units (MUs) of a fault tolerant stripe associated with a memory sub-system is received. A set of memory access operations to be executed at the MUs of the fault tolerant stripe in accordance with the received request is determined. The set of memory access operations include one or more read operations to read data from the MUs of the fault tolerant stripe. The set of memory access operations also include one or more write operations to write the set of host data items and redundancy metadata associated with the set of host data items to MUs of the fault tolerant stripe. A first series of commands corresponding to the one or more read operations of the set of memory access operations is executed. The redundancy metadata associated with the set of host data items is generated based on the data read from the MUs of the fault tolerant stripe during execution of the first series of commands and the set of host data items.

Abstract: Responsive to receiving a table flush command, a first portion of an address mapping table is identified. A first flush operation with respect to a first portion of the address mapping table is performed. Responsive to receiving at least one memory access command, flush operations for a subsequent portion of the address mapping table is suspended. At least one memory access operation specified by the at least one memory access command is performed. A second flush operation with respect to the subsequent portion of the address mapping table is performed.

Abstract: Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising generating a super management unit (SMU) memory access command; splitting the SMU memory access command into a plurality of management unit (MU) memory access commands; indexing, in an index data structure, each MU memory access command of the plurality of MU memory access commands; issuing, to the memory device, a sequence of MU memory access commands from the plurality of MU memory access commands; receiving an indication that a MU memory access command from the sequence of MU memory access commands is completed; and responsive to determining that the completed MU memory access command satisfies a criterion, issuing an available MU memory access command based on an index value of the available MU memory access command.

Abstract: A system can include a memory device and a processing device coupled with the memory device. The processing device can receive a command of a first type from a host system. The processing device can select a threshold criterion for the command of the first type based on a count of commands of a second type. The processing device can determine whether a second count of commands of the first type satisfies the threshold criterion and in response to the second count satisfying the threshold criterion, the processing logic can transmit a notification to the host system to refrain from transmitting the commands of the first type.

Abstract: A system can include a memory devices and a processing device coupled with the memory devices. The processing device can receive a command and determine whether the command includes a value for a voltage associated with a read at the memory device. The processing device can also, responsive to the command failing to specify the value, select a second value, from multiple values, for the voltage associated with the read at the memory device based at on a duration subsequent to a previous write operation satisfying a threshold criterion. The processing device can also apply the voltage having the second value at memory cells of the memory device to determine a logic state for the memory cells.

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include receiving, by the processing device, a trim command on the memory device, wherein the trim command references a range of logical block addresses (LBAs). The operations performed by the processing device further include identifying a group of memory cells corresponding to the range of LBAs, wherein the group of memory cells comprises one or more management units (MUs). The operations performed by the processing device further include updating a data structure associated with the group of memory cells to reference the request; receiving a memory access command with respect to the group of memory cells.

Abstract: A memory access command to be performed on a die of a memory device is received, wherein the memory access command comprises a base partition number and a base page address. The memory access command is converted into a plurality of commands based on a number of partitions associated with the die. A respective partition number derived from the base partition number is determined for each command of the plurality of commands. A respective page address associated with each command of the plurality of commands is determined using the base page address. The plurality of commands is executed using, for each command of the plurality of commands, the respective partition number and the respective page address.

Abstract: A die command from a requestor is received. The die command into a die command queue is stored. The die command from the die command queue into a plurality of partition commands is partitioned. The plurality of partition commands into one of a first plurality of partition command queues or a second plurality of partition command queues is mapped. The partition command of the first plurality of partition command queues or the second plurality of partition command queues is issued to a command processor to be applied to the one or more memory devices.

Abstract: A partition command from one of a plurality of write partition command queues or a plurality of read partition command queues is received. The received partition command is issued to a command processor of the sequencer component to be applied to one of the one or more memory devices. Responsive to receiving the partition command of the plurality of write partition command queues, whether a timeout threshold criterion pertaining to the plurality of read partition command queues is satisfied is determined. Responsive to determining that the timeout threshold criterion pertaining to the plurality of read partition command queues is not satisfied, whether a write threshold criterion pertaining to the plurality of write partition command queues is satisfied is determined.