Patents by Inventor Chih-Li Chiang
Chih-Li Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087057Abstract: A power consumption monitoring device includes a sensor, a storage, and a processor. The sensor is configured to detect a power-consuming device quantity and a power consumption amount. The storage is configured to store the power-consuming device quantity and the power consumption amount. The processor is communicatively connected to the sensor and the storage. The processor is configured to calculate a power-consuming device idling indicator based on the power-consuming device quantity and the power consumption amount in a monitoring time interval, wherein the power-consuming device idling indicator is used for indicating a deviation status of the power-consuming device quantity and the power consumption amount. The processor is further configured to determine whether the power-consuming device idling indicator exceeds a warning threshold. In response to the power-consuming device idling indicator exceeding the warning threshold, the processor is further configured to generate a warning message.Type: ApplicationFiled: December 20, 2022Publication date: March 14, 2024Inventors: Wei-Chao CHEN, Ming-Chi CHANG, Chih-Pin WEI, Ke-Li WU, Hua-Hsiu CHIANG, Yu-Lun CHANG
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Publication number: 20240088267Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yi PENG, Chih Chieh YEH, Chih-Sheng CHANG, Hung-Li CHIANG, Hung-Ming CHEN, Yee-Chia YEO
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Patent number: 11929318Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.Type: GrantFiled: May 10, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
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Publication number: 20240071834Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Li CHIANG, Chih-Liang CHEN, Tzu-Chiang CHEN, I-Sheng CHEN, Lei-Chun CHOU
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Patent number: 7498185Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.Type: GrantFiled: February 14, 2008Date of Patent: March 3, 2009Assignee: Epistar CorporationInventors: Tzong-Liang Tsai, Chih-Li Chiang, Chih-Sung Chang, Way-Jze Wen
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Publication number: 20080188021Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.Type: ApplicationFiled: February 14, 2008Publication date: August 7, 2008Applicant: EPISTAR CORPORATIONInventors: Tzong-Liang Tsai, Chih-Li Chiang, Chih-Sung Chang, Way-Jze Wen
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Patent number: 7355209Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.Type: GrantFiled: December 22, 2005Date of Patent: April 8, 2008Assignee: Epistar CorporationInventors: Tzong-Liang Tsai, Chih-Li Chiang, Chih-Sung Chang, Way-Jze Wen
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Publication number: 20060186417Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.Type: ApplicationFiled: December 22, 2005Publication date: August 24, 2006Inventors: Tzong-Liang Tsai, Chih-Li Chiang, Chih-Sung Chang, Way-Jze Wen
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Patent number: 7012281Abstract: A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.Type: GrantFiled: October 30, 2003Date of Patent: March 14, 2006Assignee: Epistar CorporationInventors: Tzong-Liang Tsai, Chih-Sung Chang, Chih-Li Chiang, Tzer-Perng Chen
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Publication number: 20050093002Abstract: A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.Type: ApplicationFiled: October 30, 2003Publication date: May 5, 2005Applicant: UNITED EPITAXY COMPANY, LTD.Inventors: Tzong-Liang Tsai, Chih-Sung Chang, Chih-Li Chiang, Tzer-Perng Chen
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Patent number: 6429460Abstract: The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption.Type: GrantFiled: September 28, 2000Date of Patent: August 6, 2002Assignee: United Epitaxy Company, Ltd.Inventors: Tzer-Perng Chen, Chih-Sung Chang, Chih-Li Chiang