Abstract: A method includes providing a first channel layer and a second channel layer over a substrate; forming a first patterned hard mask covering the first channel layer and exposing the second channel layer; selectively depositing a cladding layer on the second channel layer and not on the first patterned hard mask; performing a first thermal drive-in process; removing the first patterned hard mask; after removing the first patterned hard mask, forming an interfacial dielectric layer on the cladding layer and the first channel layer; and forming a high-k dielectric layer on the interfacial dielectric layer.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: An image sensing device and a control device of an illumination device thereof are provided. The control device includes a control circuit, an operation circuit, and multiple driving signal generators. The control circuit generates multiple control signals. The operation circuit performs a logical operation on the control signals and an image capturing signal to generate multiple operation results. The driving signal generator respectively provides multiple driving signals to the illumination device according to the operation results, and the driving signals respectively have multiple different output powers.

Abstract: A composite sheet structure is presented, and includes a core layer and two surface layers. Each surface layer has a plurality of metallic sheets. The metallic sheets bond with one another. The core layer and the surface layers bond with each other, and the core layer is sandwiched between the two surface layers. In comparison to conventional single type/solid piece of building material, the present invention results in a dramatic cost reduction in various building industry. With the up-to-date technology, the strength of metallic composite sheet remains within structural grade parameter and meets related specifications. Manufacturers are benefited from the cheaper metallic sheet in the composition while enjoying the same quality look of the outer layer.

Abstract: A hinge includes a shaft, a bracket, two washers, a resilient member assembly mating with the pole, and a fastener. The shaft includes a pole. The bracket includes a knuckle portion. The washers are mounted on the pole. The fastener is engaging with the pole and exerting force against the washers, and the resilient member assembly.

Abstract: A composite sheet structure is presented, and includes a core layer and two surface layers. Each surface layer has a plurality of metallic sheets. The metallic sheets bond with one another. The core layer and the surface layers bond with each other, and the core layer is sandwiched between the two surface layers. In comparison to conventional single type/solid piece of building material, the present invention results in a dramatic cost reduction in various building industry. With the up-to-date technology, the strength of metallic composite sheet remains within structural grade parameter and meets related specifications. Manufacturers are benefited from the cheaper metallic sheet in the composition while enjoying the same quality look of the outer layer.

Abstract: A method of manufacturing a composite product includes the following steps of preparing at least one metallic piece; placing the metallic piece into a mold and then punching the metallic piece to be bent after the mold is closed; and injecting a polymer into the mold to allow the polymer contact the surface of the metallic piece. The metallic piece can be a single-layered metallic plate or a composite metallic plate. With the implementation of the invention, the production cost can be saved and the production procedure can be simplified. A composite product is further provided.

Abstract: A process of producing composite sheet is presented, and the process comprises the steps of: (a) providing a plurality of metallic sheets; (b) bonding the metallic sheets with one another; and(c) finishing the bonded composite sheet that has a plurality of metallic layers. In comparison to conventional single type/solid piece of building material, the present invention results in a dramatic cost reduction in various building industry. With the up-to-date technology, the strength of metallic composite sheet remains within structural grade parameter and meets related specifications. Manufacturers are benefited from the cheaper metallic sheet in the composition while enjoying the same quality look of the outer layer. Furthermore, a structure of the composite sheet is also presented in the present invention.

Abstract: A hinge includes a shaft, a bracket, two washers, a resilient member assembly mating with the pole, and a fastener. The shaft includes a pole. The bracket includes a knuckle portion. The washers are mounted on the pole. The fastener is engaging with the pole and exerting force against the washers, and the resilient member assembly.