Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.

Abstract: A single-stage gate driving circuit with multiple outputs includes a first bootstrapping circuit, a first pre-charge circuit, a first output control circuit, a second bootstrapping circuit, a second pre-charge circuit, and a second output control circuit. During a first duration, the first pre-charge circuit precharges a first node to a first voltage. During a second duration, the first bootstrapping circuit boosts the first node from the first voltage to a second voltage, and the second pre-charge circuit precharges a second node to a fourth voltage. During a third duration, the first output control circuit boosts the first node from the second voltage to a third voltage, and the second bootstrapping circuit boosts the second node from the fourth voltage to a fifth voltage. During a fourth duration, the second output control circuit boosts the second node from the fifth voltage to a sixth voltage.

Abstract: A gate driving circuit includes a bootstrapping circuit, a pre-charge circuit, and an output control circuit. The bootstrapping circuit is composed of a bootstrapping capacitor and a transistor. A first terminal of the bootstrapping capacitor has a first voltage during a first duration. The pre-charge circuit is connected to the first terminal of the bootstrapping capacitor. The pre-charge circuit boosts the first terminal of the bootstrapping capacitor from the first voltage to a second voltage during a second duration. The bootstrapping circuit boosts the first terminal of the bootstrapping capacitor from the second voltage to a third voltage during a third duration. The output control circuit is connected to the first terminal of the bootstrapping capacitor. The output control circuit boosts the first terminal of the bootstrapping capacitor from the third voltage to a fourth voltage during a fourth duration.

Abstract: A gate driving circuit includes a bootstrapping circuit, a pre-charge circuit, and an output control circuit. The bootstrapping circuit is composed of a bootstrapping capacitor and a transistor. A first terminal of the bootstrapping capacitor has a first voltage during a first duration. The pre-charge circuit is connected to the first terminal of the bootstrapping capacitor. The pre-charge circuit boosts the first terminal of the bootstrapping capacitor from the first voltage to a second voltage during a second duration. The bootstrapping circuit boosts the first terminal of the bootstrapping capacitor from the second voltage to a third voltage during a third duration. The output control circuit is connected to the first terminal of the bootstrapping capacitor. The output control circuit boosts the first terminal of the bootstrapping capacitor from the third voltage to a fourth voltage during a fourth duration.

Abstract: A single-stage gate driving circuit with multiple outputs includes a first bootstrapping circuit, a first pre-charge circuit, a first output control circuit, a second bootstrapping circuit, a second pre-charge circuit, and a second output control circuit. During a first duration, the first pre-charge circuit precharges a first node to a first voltage. During a second duration, the first bootstrapping circuit boosts the first node from the first voltage to a second voltage, and the second pre-charge circuit precharges a second node to a fourth voltage. During a third duration, the first output control circuit boosts the first node from the second voltage to a third voltage, and the second bootstrapping circuit boosts the second node from the fourth voltage to a fifth voltage. During a fourth duration, the second output control circuit boosts the second node from the fifth voltage to a sixth voltage.

Abstract: A touch panel includes a substrate, a first electrode layer, and a second electrode layer. The first electrode layer is disposed over the substrate. The first electrode layer includes a plurality of first receiving electrodes, and the first receiving electrodes are separated from each other, extend along a first direction, and are arranged along a second direction substantially perpendicular to the first direction. The second electrode layer is disposed over the substrate and is electrically insulated from the first electrode layer. The second electrode layer includes a driving electrode and a second receiving electrode. The driving electrode extends along the first direction. The second receiving electrode is separated from the driving electrode and extends along the first direction.

Abstract: A method of calibrating touch sensing applicable to a microprocessor of an ultrasonic touch sensing device, in which the ultrasonic touch sensing device is for generating a touch sensing signal according to a ultrasonic wave, and the method includes: receiving the touch sensing signal; measuring temperature of the ultrasonic touch sensing device to generate multiple temperature parameters; if a variation tendency of the temperature parameters is downward, and if a level of the touch sensing signal lower than a level of a reference signal is first detected, storing the level of the touch sensing signal as a first signal strength and reporting a touch event is detected; and if the variation tendency of the temperature parameters is downward, and if the level of the touch sensing signal lower than the level of the reference signal is not first detected, calibrating the reference signal according to the touch sensing signal.

Abstract: A detection device includes a light refraction structure and a resistance detection circuit. The light refraction structure includes a substrate, a conductive layer, and a refraction layer. The conductive layer and the refraction layer are formed on the substrate. The conductive layer includes a resistance. The resistance detection circuit is electrically coupled to the conductive layer and is adapted to detect the resistance of the conductive layer. The resistance detection circuit generates a detection signal according to a change in the resistance, and the detection signal represents a state of the refraction layer.

Abstract: A touch system includes a processor and a touch array. The touch array includes touch units. Each of the touch units includes a driving electrode, a first sensing electrode, and a second sensing electrode. A first capacitor is formed between the first sensing electrode and the driving electrode. A second capacitor is formed between the second sensing electrode and the driving electrode. The processor is configured to: determine whether the touch array operates in an underwater mode according to the first original capacitance value and the second original capacitance value; determine whether a conductor touch event occurs according to a first threshold value and a voltage across the first capacitor when the touch array operates in the underwater mode; and determine whether a non-conductor touch event occurs according to a second threshold value and a voltage across the second capacitor when the touch array operates in the underwater mode.

Abstract: A touch system includes a processor and a touch array. The touch array includes touch units. Each of the touch units includes a driving electrode, a first sensing electrode, and a second sensing electrode. A first capacitor is formed between the first sensing electrode and the driving electrode. A second capacitor is formed between the second sensing electrode and the driving electrode. The processor is configured to: determine whether the touch array operates in an underwater mode according to the first original capacitance value and the second original capacitance value; determine whether a conductor touch event occurs according to a first threshold value and a voltage across the first capacitor when the touch array operates in the underwater mode; and determine whether a non-conductor touch event occurs according to a second threshold value and a voltage across the second capacitor when the touch array operates in the underwater mode.

Abstract: A detection device includes a light refraction structure and a resistance detection circuit. The light refraction structure includes a substrate, a conductive layer, and a refraction layer. The conductive layer and the refraction layer are formed on the substrate. The conductive layer includes a resistance. The resistance detection circuit is electrically coupled to the conductive layer and is adapted to detect the resistance of the conductive layer. The resistance detection circuit generates a detection signal according to a change in the resistance, and the detection signal represents a state of the refraction layer.

Abstract: Ultrasonic wave sensing device includes a reading transistor, an ultrasonic wave transducer, and an input circuit. The reading transistor includes a first node, a second node, and a control node, wherein the first node receives a reference voltage, the second node couples with a reading node, and the control node couples with a first signal node. The ultrasonic wave transducer couples between the first signal node and a first input node, and receives a first control signal from the first input node. The input circuit couples between the first signal node and a second input node, and receives a second control signal from the second input node. The ultrasonic wave transducer generates an ultrasonic wave according to the first control signal and the second control signal, and outputs a sensing signal to the control node according to a reflected sound wave.

Abstract: A light emitting device includes a substrate, a light emitting element, a shielding layer, and a collimator. The light emitting element is embedded in the substrate. The shielding layer is disposed on the substrate and has an opening exposing the light emitting element. The collimator is disposed on the shielding layer.

Abstract: Ultrasonic wave sensing device includes a reading transistor, an ultrasonic wave transducer, and an input circuit. The reading transistor includes a first node, a second node, and a control node, wherein the first node receives a reference voltage, the second node couples with a reading node, and the control node couples with a first signal node. The ultrasonic wave transducer couples between the first signal node and a first input node, and receives a first control signal from the first input node. The input circuit couples between the first signal node and a second input node, and receives a second control signal from the second input node. The ultrasonic wave transducer generates an ultrasonic wave according to the first control signal and the second control signal, and outputs a sensing signal to the control node according to a reflected sound wave.

Abstract: A multi-frame overdriving circuit for use in a liquid crystal display including a counting unit and a multi-frame overdriving unit is provided. The counting unit counts a number m of frame periods for which a pixel data corresponding to a pixel keeps a first gray value, wherein m is a positive integer. When the pixel data changes to a second gray value from the first gray value in a first frame period, the multi-frame overdriving unit respectively outputs y multi-frame overdriving pixel data corresponding to the pixel within successive y frame periods starting from the first frame period. The y multi-frame overdriving pixel data are related to the first gray value, the second gray value and the number m of frame periods, wherein y is a positive integer.

Abstract: A matrix sensing apparatus with architecture having reduced quantity of required sensing lines is disclosed. The matrix sensing apparatus includes a plurality of driving lines, a plurality of sensing lines and a matrix sensing region. The matrix sensing region includes a plurality of sensing areas. Each sensing area includes a first transistor, a second transistor, and a sensing unit for generating a sensing signal. The first transistor is coupled to the sensing unit and a corresponding sensing line. The second transistor is coupled to the first transistor, a first corresponding driving line and a second corresponding driving line. The first transistor together with the second transistor functions to control the signal connection between the sensing unit and the corresponding sensing line based on the driving signals of the first and second corresponding driving lines.

Abstract: A matrix sensing apparatus with architecture having reduced quantity of required sensing lines is disclosed. The matrix sensing apparatus includes a plurality of driving lines, a plurality of sensing lines and a matrix sensing region. The matrix sensing region includes a plurality of sensing areas. Each sensing area includes a first transistor, a second transistor, and a sensing unit for generating a sensing signal. The first transistor is coupled to the sensing unit and a corresponding sensing line. The second transistor is coupled to the first transistor, a first corresponding driving line and a second corresponding driving line. The first transistor together with the second transistor functions to control the signal connection between the sensing unit and the corresponding sensing line based on the driving signals of the first and second corresponding driving lines.