Patents by Inventor Chih-Ling Liao

Chih-Ling Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118178
    Abstract: A staining kit is provided, including a first pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, CD8, CD45, and CTLA4; a second pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, dendritic cell, and CD45; a third pattern including antibodies against T cell, B cell, NK cell, monocyte, CD8, CD45, CD45RA, CD62L, CD197, CX3CR1 and TCR??; and a fourth pattern including antibodies against B cell, CD23, CD38, CD40, CD45 and IgM, wherein the antibodies of each pattern are labeled with fluorescent dyes. A method of identifying characterized immune cell subsets of a disease and a method of predicting the likelihood of NPC in a subject in the need thereof using the staining kit are also provided.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: FULLHOPE BIOMEDICAL CO., LTD.
    Inventors: Jan-Mou Lee, Li-Jen Liao, Yen-Ling Chiu, Chih-Hao Fang, Kai-Yuan Chou, Pei-Hsien Liu, Cheng-Yun Lee
  • Patent number: 11955430
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Hsuan Lin, Hsi Chung Chen, Ji-Ling Wu, Chih-Teng Liao
  • Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20240087961
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ju CHOU, Chih-Chung Chang, Jun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Kao, Chen-Hsuan Liao
  • Patent number: 11923250
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Ju Chou, Chih-Chung Chang, Jiun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Gao, Chen-Hsuan Liao
  • Patent number: 11872343
    Abstract: A ventilator system includes a first air tank, a plurality of second air tanks communicated with the first air tank, a plurality of breathing devices respectively communicated with the second air tanks, a plurality of first vacuum tanks respectively communicated with the breathing devices, and a second vacuum tank communicated with the first vacuum tanks. The first air tank has a positive pressure relative to the second air tanks. The second vacuum tank has a negative pressure relative to the first vacuum tanks.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: January 16, 2024
    Inventors: Chen-Kun Liaw, Tai-Yin Wu, Yu-Ciao Liao, Yu-Yan Liao, Hsiang-Hung Liaw, Yu-Peng Liao, Yi-Hsuan Liao, Yen-Chun Liao, Chih-Ling Liao
  • Publication number: 20210299377
    Abstract: A ventilator system includes a first air tank, a plurality of second air tanks communicated with the first air tank, a plurality of breathing devices respectively communicated with the second air tanks, a plurality of first vacuum tanks respectively communicated with the breathing devices, and a second vacuum tank communicated with the first vacuum tanks. The first air tank has a positive pressure relative to the second air tanks. The second vacuum tank has a negative pressure relative to the first vacuum tanks.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 30, 2021
    Inventors: Chen-Kun Liaw, Tai-Yin Wu, Yu-Ciao Liao, Yu-Yan Liao, Hsiang-Hung Liaw, Yu-Peng Liao, Yi-Hsuan Liao, Yen-Chun Liao, Chih-Ling Liao