Abstract: A variable temperature test system and an operation method thereof are provided. The variable temperature test system includes a main control device, multiple test devices, and a variable temperature test platform. The variable temperature test platform is coupled to the main control device and the test devices. The main control device provides an adjustment parameter according to at least one pending test. The variable temperature test platform includes multiple test areas, multiple temperature sensors, and a temperature control module. The test areas are respectively coupled to the test devices. The temperature sensors are respectively disposed in the test areas. The temperature control module is coupled to the test areas. The temperature control module adjusts a temperature of at least one test area according to the adjustment parameter.

Abstract: A temperature control method and a temperature control system for controlling a temperature of a target device are disclosed. The target device is disposed in a temperature control device. The method includes: controlling an internal temperature of the temperature control device according to a base parameter and a compensation parameter; detecting a temperature of the target device via a temperature sensor during the period that the internal temperature of the temperature control device is controlled according to the base parameter and the compensation parameter; and adjusting the compensation parameter according to the temperature of the target device to change the internal temperature of the temperature control device.

Abstract: Disclosed are a service lifetime monitoring and early warning method, a memory storage device, and a memory control circuit unit. The method includes: reading a history information from a rewritable non-volatile memory module, calculating a remaining lifetime based on the history information and a user habit, generating an early warning signal, and outputting the remaining lifetime and the early warning signal in response to the remaining lifetime being lower than a preset lifetime.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: A power-supply control device and a power test system are disclosed. The power test system includes a memory and a processor. The processor is configured to: obtain at least one power-supply path manner of at least one power-down test device; determine at least one power-supply path interface according to the at least one power-supply path manner; determine at least one electronic switch according to the at least one power-supply path interface; determine at least one target device to be tested; obtain at least one power-down test instruction according to the at least one target device; establish a target power-supply path corresponding to the target device between the at least one power-supply path interface and the at least one electronic switch according to the power-supply path establishment parameter; and at the target power-supply path, perform a power-down operation according to the power-down execution parameter.

Abstract: A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: setting preset read count thresholds corresponding to physical erasing units respectively; in a background operation, in response to a read count of a first physical erasing unit in the physical erasing units being greater than its corresponding preset read count threshold, reading word lines in the first physical erasing unit to obtain first error bit amounts; determining whether a refresh operation needs to be performed on the first physical erasing unit according to first error bit amounts; in response to no need to perform the refresh operation on the first physical erasing unit, selecting a first word line with the largest first error bit amount in the word lines, and detecting a voltage distribution variation of the first word line; and calculating a new read count threshold of the first physical erasing unit according to the voltage distribution variation.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: A memory adaptive temperature controlling method, a storage device, and a control circuit unit are provided. In this exemplary embodiment, the temperature value is obtained according to the temperature measured by the thermal sensor, and the access speed to be reached is calculated according to the temperature change rate within the specific time range and the adjustment percentage when it is determined that the speed-down or speed-up operation is required to be performed. By adjusting the access speed of the memory storage device in a stepwise manner, the temperature of the memory storage device may be stabilized, thereby striking the balance between the temperature stability and the system performance of the memory storage device.

Abstract: A mapping table re-building method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving write command from a host system, wherein the write command instructs storing first data to a first logical unit; performing a programming operation according to the write command to store the first data and identification information of the first logical unit to a first physical unit; updating a mapping table in response to the programming operation; detecting a table abnormal event related to the mapping table; reading the identification information of the first logical unit from the first physical unit in response to the table abnormal event; and re-building the mapping table according to the identification information of the first logical unit.

Abstract: A table management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: storing multiple table groups, wherein each of the table groups includes multiple voltage management tables; detecting a status of the memory storage device; determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group includes multiple target voltage management tables; reading data from a rewritable non-volatile memory module by using at least one read voltage level according to at least one of the target voltage management tables.

Abstract: A write control method based on write behavior prediction, a memory storage device, and a memory control circuit unit are provided. The method includes: monitoring a first data write behavior of a host system during a first time range; according to the first data write behavior, predicting a second data write behavior of the host system during a second time range; obtaining a first measurement parameter and a first target parameter corresponding to the first data write behavior; according to the first measurement parameter, the first target parameter, and the second data write behavior, determining a write control parameter; and sending a write command sequence according to the write control parameter to instruct a rewritable non-volatile memory module to perform a data write based on multiple write modes during the second time range.

Abstract: A table management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: storing multiple table groups, wherein each of the table groups includes multiple voltage management tables; detecting a status of the memory storage device; determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group includes multiple target voltage management tables; reading data from a rewritable non-volatile memory module by using at least one read voltage level according to at least one of the target voltage management tables.

Abstract: A memory adaptive temperature controlling method, a storage device, and a control circuit unit are provided.

Abstract: A table sorting method, a memory storage device, and a memory control circuit unit are provided. The method includes: reading first data from a first physical unit by using a first read voltage level according to a first voltage management table among multiple voltage management tables; decoding the first data; in response to the first data being successfully decoded, updating count information corresponding to the first voltage management table; and in response to the count information meeting a default condition, increasing a usage priority of the first voltage management table among the voltage management tables.

Abstract: A risk assessment method based on data priority, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a query command from a host system; in response to the query command, performing a data health detection on a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module stores data with multiple data priorities; generating risk assessment information according to a detection result, wherein the risk assessment information reflects a health degree of data with different data priorities in the rewritable non-volatile memory modules by different risk levels; and transmitting the risk assessment information to the host system.