Abstract: A semiconductor device includes a first well region having the first conductivity type and a second well region having the second conductivity type formed in a substrate having the first conductivity type. An isolation component and a third well region are formed in the second well region. The third well region has the first conductivity type and is in contact with the bottom surface of the isolation component. A first doping region is formed in the first well region and a second doping region is formed in the second well region. The first and second doping regions have the second conductivity type and are disposed at opposite sides of the gate structure. The interface between the first well region and the second well region is positioned between the isolation component and the first doping region. The interface is separated from the third well region by a lateral distance.

Abstract: A semiconductor structure includes a substrate; a first structure over the substrate and having a first gate stack and two first gate spacers on two opposing sidewalls of the first gate stack; a second structure over the substrate and having a second gate stack and two second gate spacers on two opposing sidewalls of the second gate stack; a source/drain (S/D) feature over the substrate and adjacent to the first and the second gate stacks; an S/D contact over the S/D feature and between one of the first gate spacers and one of the second gate spacers; a conductive via disposed over and electrically connected to the S/D contact; and a dielectric liner layer. A first portion of the dielectric liner layer is disposed on a sidewall of the one of the first gate spacers and is directly above the S/D contact and spaced from the S/D contact.

Abstract: The semiconductor structure includes a semiconductor substrate, a metallization feature over the semiconductor substrate, a first dielectric feature, and a second dielectric feature. The metallization feature includes a first bottom corner and a second bottom corner opposite to the first bottom corner. The first dielectric feature is adjacent to the first bottom corner, and the second dielectric feature is adjacent to the second bottom corner.

Abstract: Semiconductor devices and methods of forming the same are provided. An exemplary semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, and a gate cut feature extending continuously from laterally between the first gate structure and the second gate structure to laterally between the first backside dielectric feature and the second backside dielectric feature. The gate cut feature includes an air gap laterally between the first gate structure and the second gate structure.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes first channel members over a first backside dielectric feature, second channel members over a second backside dielectric feature, a first epitaxial feature abutting the first channel members and over the first backside dielectric feature, a second epitaxial feature abutting the second channel members and over the second backside dielectric feature, a first gate structure wrapping around each of the first channel members, a second gate structure wrapping around each of the second channel members, and an isolation feature laterally stacked between the first backside dielectric feature and the second backside dielectric feature. A bottommost portion of the isolation feature is below bottom surfaces of the first and second gate structures, and a topmost portion of the isolation feature is above top surfaces of the first and second gate structures.

Abstract: A semiconductor structure includes a source/drain (S/D) feature; one or more channel semiconductor layers connected to the S/D feature; a gate structure engaging the one or more channel semiconductor layers; a first silicide feature at a frontside of the S/D feature; a second silicide feature at a backside of the S/D feature; and a dielectric liner layer at the backside of the S/D feature, below the second silicide feature, and spaced away from the second silicide feature by a first gap. A backside power rail is included.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A semiconductor structure includes a source/drain; one or more channel layers connected to the source/drain; a gate structure adjacent the source/drain and engaging each of the one or more channel layers; a first silicide layer over the source/drain; a source/drain contact over the first silicide layer; a power rail under the source/drain; one or more first dielectric layers between the source/drain and the power rail; and one or more second dielectric layers under the first silicide layer and on sidewalls of the source/drain, wherein the one or more second dielectric layers enclose an air gap.

Abstract: A method having a semiconductor substrate received and a first dielectric layer is formed over the semiconductor substrate. A trench is formed in the first dielectric layer. The trench is filled to form a conductive layer in the first dielectric layer. The conductive layer is segmented to form a first conductive feature and a second conductive feature separated from each other by a recess. The recess is filled with a second dielectric layer, such that one or both of the conductive features are end-capped by a portion of the first dielectric layer and a portion of the second dielectric layer.

Abstract: The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drain associated with the first gate structure of the first region. Moreover, the integrated circuit may have a second region with a second gate structure having a high-? gate dielectric, at least one source associated with the second gate structure of the second region, and at least one drain associated with the second gate structure of the second region. The integrated circuit may further have at least one trench isolation between the first region and the second region.

Abstract: A semiconductor structure includes a substrate; a first structure over the substrate and having a first gate stack and two first gate spacers on two opposing sidewalls of the first gate stack; a second structure over the substrate and having a second gate stack and two second gate spacers on two opposing sidewalls of the second gate stack; a source/drain (S/D) feature over the substrate and adjacent to the first and the second gate stacks; an S/D contact over the S/D feature and between one of the first gate spacers and one of the second gate spacers; a conductive via disposed over and electrically connected to the S/D contact; and a dielectric liner layer. A first portion of the dielectric liner layer is disposed on a sidewall of the one of the first gate spacers and is directly above the S/D contact and spaced from the S/D contact.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes channel members over a backside dielectric feature, a gate structure wrapping around the channel members, an epitaxial feature abutting the channel members, a first isolation feature disposed on a first sidewall of the gate structure and extending through the backside dielectric feature, and a second isolation feature disposed on a second sidewall of the gate structure and extending through the backside dielectric feature. A top surface of the first isolation feature is above a top surface of the second isolation feature.

Abstract: Present disclosure provides a method for forming a semiconductor structure, including forming a dielectric layer over a semiconductor substrate, patterning an insulator stripe over the semiconductor substrate, including forming an insulator layer over the semiconductor substrate and at a bottom of the insulator stripe, depositing a semiconductor capping layer continuously over the insulator stripe, wherein the semiconductor capping layer includes crystalline materials, wherein the semiconductor capping layer is free from being in direct contact with the semiconductor substrate, and cutting off the semiconductor capping layer between the insulator stripes, forming a gate, wherein the gate is in direct contact with the semiconductor capping layer, a first portion of the semiconductor capping layer covered by the gate is configured as a channel structure, and forming a conductible region at a portion of the insulator stripe not covered by the gate stripe by a regrowth operation.

Abstract: A decision-feedback equalizer (DFE) includes a combining circuit and a feedback filter. The combining circuit combines an input signal and at least one feedback signal to generate an equalized signal. The feedback filter generates the at least one feedback signal according to the equalized signal, and includes a controllable delay circuit. The controllable delay circuit receives an output signal that is derived from the equalized signal, and applies at least one delay amount to generate at least one delay signal, wherein the at least one feedback signal is derived from the at least one delay signal.

Abstract: A transceiver and a clock generation module are provided. The transceiver includes a receiver and the clock generation module. The receiver receives a receiving-input-data and a receiving-input-strobe. The receiver includes a data-receiving circuit for delaying the receiving-input-data and a strobe-receiving circuit for delaying the receiving-input-strobe. The clock generation module includes a calibration circuit, a phase-compensation module, and a multi-phase signal generator. The phase-compensation module compensates one of the data-receiving circuit and the strobe-receiving circuit according to a data-phase-compensation signal and a strobe-phase-compensation signal generated by the calibration circuit. The multi-phase signal generator generates shifted system-clock signals. A phase difference between the first and the second shifted system-clock signals is equivalent to a phase difference between the receiving-path-data and the receiving-path-strobe.

Abstract: A transceiver and a clock generation module are provided. The transceiver includes a receiver and the clock generation module. The receiver receives a receiving-input-data and a receiving-input-strobe. The receiver includes a data-receiving circuit for delaying the receiving-input-data and a strobe-receiving circuit for delaying the receiving-input-strobe. The clock generation module includes a calibration circuit, a phase-compensation module, and a multi-phase signal generator. The phase-compensation module compensates one of the data-receiving circuit and the strobe-receiving circuit according to a data-phase-compensation signal and a strobe-phase-compensation signal generated by the calibration circuit. The multi-phase signal generator generates shifted system-clock signals. A phase difference between the first and the second shifted system-clock signals is equivalent to a phase difference between the receiving-path-data and the receiving-path-strobe.