Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: Methods and systems for providing generalized link adaptation in an orthogonal frequency-division multiple access wireless communications network can include determining a number of desired resource blocks (RBs) for each user of a plurality of users; calculating a maximal channel gain Gm for each RB of a plurality of RBs; reordering the plurality of RBs based on the Gm; assigning one of the plurality of RBs to the plurality of users one-by-one according to the reordering of the plurality of RBs; determining a priority list for assigning remaining unassigned RBs; assigning the remaining unassigned RBs to the plurality of users based on the priority list; and mapping a symbol or a packet to each assigned RB.

Abstract: Methods and systems for providing generalized link adaptation in an orthogonal frequency-division multiple access wireless communications network can include determining a number of desired resource blocks (RBs) for each user of a plurality of users; calculating a maximal channel gain Gm for each RB of a plurality of RBs; reordering the plurality of RBs based on the Gm; assigning one of the plurality of RBs to the plurality of users one-by-one according to the reordering of the plurality of RBs; determining a priority list for assigning remaining unassigned RBs; assigning the remaining unassigned RBs to the plurality of users based on the priority list; and mapping a symbol or a packet to each assigned RB.