Patents by Inventor Chih-Min Wen

Chih-Min Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for chemical mechanical polishing including first and second polishing
    Patent number: 7799689
    Abstract: A method and apparatus for performing first and second polishings on a workpiece wherein the first and second polishings are performed using different operating parameters.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: September 21, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Chih-Min Wen, Chen-Hsiang Liao
  • Method and apparatus for chemical mechanical polishing
    Publication number: 20080119116
    Abstract: A method and apparatus for performing first and second polishings on a workpiece wherein the first and second polishings are performed using different operating parameters.
    Type: Application
    Filed: November 17, 2006
    Publication date: May 22, 2008
    Inventors: Chih-Min Wen, Chen-Hsiang Liao
  • Al-Cu alloy sputtering method with post-metal quench
    Patent number: 6468908
    Abstract: This invention relates to a method of fabricating metal wiring, whereby sputtered metal is rapidly cooled down by a post-metal quenching process, to prevent deleterious CuAl2 precipitation. The main embodiments are the formation of a TiN reactively sputtered bottom barrier layer, followed by a sputtered Al—Cu alloy wiring layer immediately followed by an in situ post-metal quench (key step), then followed by a reactively sputtered second TiN top barrier layer. The “in situ” post-metal quench is especially effective by employing wafer backside cooling using low temperature helium gas or argon gas, cooling the substrate from a high temperature range of 450 to 150 °C., to a low temperature range near room temperature, in a short time interval of between 30 to 180 seconds. The CuAl2 precipitates if allowed to form, block the etch removal of the underlying TiN layer causing electrical shorts between closely spaced lines.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: October 22, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Cheng-Shien Chen, Li-Der Chen, Chih-Min Wen, Chung Liu, Chih-Ching Lin