Abstract: A blind without pull cord and a raising device. The blind includes a blind structure and at least one raising device. The blind structure has a fixed side and a movable side opposite to each other. The raising device includes a housing, a retracting component and a raising cord. The housing is connected to the movable side. The retracting component is rotatably disposed on the housing. Two opposite ends of the raising cord are connected to the blind structure and the retracting component, respectively. The retracting component is configured to raise the movable side relative to the fixed side via the raising cord.

Abstract: A true random-number generator generating a random variable is provided. A first delay circuit delays an input signal to generate a first delayed signal. A second delay circuit delays the first delayed signal to generate a second delayed signal. A first sampling circuit samples the input signal according to a clock signal to generate a first sampled signal. A second sampling circuit samples the first delayed signal according to the clock signal to generate a second sampled signal. A third sampling circuit samples the second delayed signal according to the clock signal to generate a third sampled signal. An operational circuit generates the random variable and adjusts a count value according to the first sampled signal, the second sampled signal, and the third sampled signal. The operational circuit adjusts the clock signal according to the count value.

Abstract: A true random-number generator generating a random variable is provided. A first delay circuit delays an input signal to generate a first delayed signal. A second delay circuit delays the first delayed signal to generate a second delayed signal. A first sampling circuit samples the input signal according to a clock signal to generate a first sampled signal. A second sampling circuit samples the first delayed signal according to the clock signal to generate a second sampled signal. A third sampling circuit samples the second delayed signal according to the clock signal to generate a third sampled signal. An operational circuit generates the random variable and adjusts a count value according to the first sampled signal, the second sampled signal, and the third sampled signal. The operational circuit adjusts the clock signal according to the count value.

Abstract: The disclosure provides a multi-voltage chip, including a regulator circuit, a high-voltage domain controller, a low-voltage domain controller, and a digital logic circuit. The regulator circuit receives and responds to a feedback signal, a regulating start signal, and a reference voltage to convert a system high voltage into a regulated voltage. The high-voltage domain controller receives a power signal and the system high voltage to provide the reference voltage and the regulating start signal. The low-voltage domain controller is coupled to the high-voltage domain controller and receives the regulated voltage to provide a system start signal in response to the regulating start signal. The digital logic circuit is coupled to the regulator circuit to receive the regulated voltage and provide the feedback signal, and is coupled to the low-voltage domain controller to operate in response to the system start signal.

Abstract: The disclosure provides a multi-voltage chip, including a regulator circuit, a high-voltage domain controller, a low-voltage domain controller, and a digital logic circuit. The regulator circuit receives and responds to a feedback signal, a regulating start signal, and a reference voltage to convert a system high voltage into a regulated voltage. The high-voltage domain controller receives a power signal and the system high voltage to provide the reference voltage and the regulating start signal. The low-voltage domain controller is coupled to the high-voltage domain controller and receives the regulated voltage to provide a system start signal in response to the regulating start signal. The digital logic circuit is coupled to the regulator circuit to receive the regulated voltage and provide the feedback signal, and is coupled to the low-voltage domain controller to operate in response to the system start signal.

Abstract: The disclosure is related to a blind without pull cord and an angle adjustment device thereof, wherein the angle adjustment device is configured to adjust angles of slats of a blind and includes at least one adjustment assembly and a shaft. The at least one adjustment assembly includes a mount base, a string pulley, a first gear and a first string. The string pulley is pivotably disposed on the mount base. The first gear is fixed on the string pulley. The first string is installed on the string pulley and is configured to connect the slats. The shaft includes a lengthy part and at least one outer tooth fixed on the lengthy part, wherein the at least one outer tooth is engaged with the first gear. An axis of the first gear is perpendicular to an axis of the shaft.

Abstract: A method of manufacturing a semiconductor device includes receiving a FinFET precursor including a fin structure formed between some isolation regions, and a gate structure formed over a portion of the fin structure; removing a top portion of the fin structure on either side of the gate structure; growing a semiconductive layer on top of a remaining portion of the fin structure such that a plurality of corners is formed over the fin structure; forming a capping layer over the semiconductive layer; performing an annealing process on the FinFET precursor to form a plurality of dislocations proximate to the corners; and removing the capping layer.

Abstract: A tilt mechanism for a blind includes a spool, two transmission shafts, two transmission sleeves and a driven shaft. The spool has an inner gear. Each transmission shaft has an assembling portion and a gear. The gears are engaged with the inner gear. The transmission sleeves are respectively engaged with the assembling portions of the transmission shafts, and each transmission sleeve has an outer surface and a worm gear located at the outer surface thereof. The driven shaft has a teeth portion, and the teeth portion is engaged with the worm gear. The transmission shafts and the transmission sleeves are simultaneously rotatable by being driven by the spool, and the driven shaft is rotatable between a start position and a stop position along an operating direction by being driven by the transmission sleeves.

Abstract: A tilt mechanism for a blind includes a spool, two transmission shafts, two transmission sleeves and a driven shaft. The spool has an inner gear. Each transmission shaft has an assembling portion and a gear. The gears are engaged with the inner gear. The transmission sleeves are respectively engaged with the assembling portions of the transmission shafts, and each transmission sleeve has an outer surface and a worm gear located at the outer surface thereof. The driven shaft has a teeth portion, and the teeth portion is engaged with the worm gear. The transmission shafts and the transmission sleeves are simultaneously rotatable by being driven by the spool, and the driven shaft is rotatable between a start position and a stop position along an operating direction by being driven by the transmission sleeves.

Abstract: A method of manufacturing a semiconductor device includes receiving a FinFET precursor including a fin structure formed between some isolation regions, and a gate structure formed over a portion of the fin structure; removing a top portion of the fin structure on either side of the gate structure; growing a semiconductive layer on top of a remaining portion of the fin structure such that a plurality of corners is formed over the fin structure; forming a capping layer over the semiconductive layer; performing an annealing process on the FinFET precursor to form a plurality of dislocations proximate to the corners; and removing the capping layer.

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.

Abstract: A facsimile machine includes a receiving unit, a processing unit and a sending unit. The receiving unit receives facsimile data from a facsimile sending machine over a telephone network. The processing unit extracts a source identification number from the facsimile data and determines whether the source identification number matches one of a plurality of predetermined identification numbers. If the source identification number matches one of the predetermined identification numbers, the sending unit sends the facsimile data to a destination facsimile machine associated with a destination facsimile number over the telephone network.

Abstract: A system for cleaning a wafer. At least one first chuck roller is connected to a first roller base and includes a first annular groove. A second roller base opposes the first roller base. At least one second chuck roller is connected to the second roller base and includes a second annular groove. A sensing chuck roller is connected to the second roller base and includes a third annular groove corresponding to the first and second annular grooves. A cleaning member covers the third annular groove. A circumferential edge of the wafer is positioned in the first and second annular grooves and abuts the cleaning member. The first and second chuck rollers rotate the wafer, enabling the circumferential edge thereof to rub against the cleaning member.

Abstract: A method for recycling a used sputtering target is provided, including the steps of: (1) cleaning, (2) pulverization, (3) dissolution, (4) filtering, (5) peptization, (6) neutralization and precipitation, (7) rinsing and filtering, (8) drying, and (9) calcination; through the steps above, which can then be recycling used sputtering target to recover the constituent components of the ITO targets.

Abstract: A system for cleaning a wafer. At least one first chuck roller is connected to a first roller base and includes a first annular groove. A second roller base opposes the first roller base. At least one second chuck roller is connected to the second roller base and includes a second annular groove. A sensing chuck roller is connected to the second roller base and includes a third annular groove corresponding to the first and second annular grooves. A cleaning member covers the third annular groove. A circumferential edge of the wafer is positioned in the first and second annular grooves and abuts the cleaning member. The first and second chuck rollers rotate the wafer, enabling the circumferential edge thereof to rub against the cleaning member.

Abstract: A method of manufacturing sputtering targets comprises the following steps of: 1. wet milling: mixing and grinding indium-tin oxide (ITO) powders, a sintering aid agent, a binder agent, and additive agent by wet milling method; 2. granulation: drying the mixed and grinded mixtures to form granulated ITO powers; 3. shaping: granulated ITO powders into rough-shaped green bodies by using dry pressing; 4. strengthening: strengthening the rough-shaped green bodies by using the cold isostatic pressing; 5. dewaxing: putting rough-shaped green bodies into a high-temperature furnace to remove the additive agent so as to obtain dewaxed green bodies; and 6. sintering: putting the dewaxed green bodies into an controlled atmosphere furnace and sintering the dewaxed green bodies at a gas pressure ranged from 1.1 atm to 1.9 atm. By using the above-mentioned steps, the high-density ITO sputtering targets are obtained.

Abstract: A method for reconnecting a wireless system in an interference environment is provided. The wireless system comprises a host and an end device. The method searches an available communication channel between the host and the end device asynchronously. The end device informs the host of the condition of the qualified channels through the available communication channel. The host determines the most suitable channel from the qualified channels for reconnection between the host and the end device, and then informs the end device of the most suitable channel through the communication channel. The host and the end device hence switch to the most suitable channel.

Abstract: A wireless communication system, a method and a computer readable medium thereof for maintaining communication in an interference environment are provided. The wireless communication system comprises a selection and distribution device and a terminal device which communicate by a beacon. The beacon comprises a definition of an active period and an inactive period. The method comprises the steps of: the selection and distribution device and the terminal device using a first channel in the active period to communicate initially; and the selection and distribution device using a second channel in the inactive period to communicate with the terminal device if the first channel is interfered.

Abstract: A novel apparatus and method for transporting semiconductor wafer substrates typically from a CMP apparatus to a scrubber cleaner in a dry state. The method includes providing a SMIF arm at the input port of the scrubber cleaner. After they are subjected to the CMP operation, the substrates are loaded into an enclosed substrate carrier such as a cassette or pod and transported to the SMIF arm of the scrubber cleaner at the input port, where the substrates are internalized and subjected to rinsing, scrubbing and drying steps in the cleaner. Automated transport of the dry substrates from the CMP apparatus to the scrubber cleaner in an enclosed substrate carrier prevents atmospheric particles from contaminating the substrates, prevents unnecessary use of manpower, and reduces or eliminates the possibility of breakage or damage to the substrates.