Abstract: A method for motion prediction includes receiving spatial information output by a radio-wave sensor, wherein the spatial information includes position and velocity of at least one point; receiving an image captured by a camera; tracking at least one object based on the spatial information and the image to obtain a consolidated tracking result; predicting a motion trajectory of the at least one object based on the consolidated tracking result to obtain a prediction result; and controlling the camera according to the prediction result.

Abstract: A test method for a combination of touch sensitive processing apparatus and touch panel. The test method is configured to find out whether a stored time difference value with regard to driving signals is appropriate for the combination. If not, the test method is further configured to test several candidate time difference values for finding out one or a best one, which can be stored in a non-firmware of a non-volatile memory as a parameter for further touch sensitive processing. When none of the candidate time difference values is appropriate, the combination is determined as disqualified.

Abstract: A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

Abstract: A test method for a combination of touch sensitive processing apparatus and touch panel. The test method is configured to find out whether a stored time difference value with regard to driving signals is appropriate for the combination. If not, the test method is further configured to test several candidate time difference values for finding out one or a best one, which can be stored in a non-firmware of a non-volatile memory as a parameter for further touch sensitive processing. When none of the candidate time difference values is appropriate, the combination is determined as disqualified.

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Abstract: A semiconductor chip includes a first wireless communication circuit, a second wireless communication circuit, and an auxiliary path. The first wireless communication circuit includes a signal path, wherein the signal path includes a signal node. The second wireless communication circuit includes a mixer and a local oscillator (LO) buffer. The LO buffer is arranged to receive and buffer an LO signal, and is further arranged to provide the LO signal to the mixer. The auxiliary path is arranged to electrically connect the LO buffer to the signal node of the signal path, wherein the LO buffer is reused for a loop-back test function of the first wireless communication circuit through the auxiliary path.

Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Abstract: Concepts and examples pertaining to reconfigurable radio frequency (RF) front end and antenna arrays for radar mode switching are described. A processor associated with a radar system selects a mode of a plurality of modes in which to operate the radar system. The processor then controls the radar system to operate in the selected mode by utilizing a plurality of antennas in a respective configuration of a plurality of configurations of the antennas which corresponds to the selected mode. Each configuration of the plurality of configurations of the antennas results in respective antenna characteristics. Each configuration of the plurality of configurations of the antennas utilizes a respective number of antennas of the plurality of antennas.

Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Abstract: A radar module includes a printed circuit board (PCB) and a semiconductor package mounted on the PCB. The semiconductor package comprises an integrated circuit die and a substrate for electrically connecting the integrated circuit die to the PCB. The substrate comprises an antenna layer integrated into the semiconductor package and electrically connected to the integrated circuit die for at least one of transmitting and receiving radar signals. A discrete pattern-shaping device is mounted on the PCB and is configured to shape a radiation pattern of the radar signals.

Abstract: A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

Abstract: A method for motion prediction includes receiving spatial information output by a radio-wave sensor, wherein the spatial information includes position and velocity of at least one point; receiving an image captured by a camera; tracking at least one object based on the spatial information and the image to obtain a consolidated tracking result; predicting a motion trajectory of the at least one object based on the consolidated tracking result to obtain a prediction result; and controlling the camera according to the prediction result.

Abstract: A semiconductor chip includes a first wireless communication circuit, a local oscillator (LO) buffer, and an auxiliary path. The first wireless communication circuit has a signal path, wherein the signal path has a mixer input port and a signal node distinct from the mixer input port. The auxiliary path is used to electrically connect the LO buffer to the signal node of the signal path. The LO buffer is reused for a transmit (TX) function through the auxiliary path.

Abstract: A system includes a local oscillator (LO) signal generation circuit, a receiver (RX) circuit, and a calibration circuit. The LO signal generation circuit generates an LO signal according to a reference clock, and includes an active oscillator that generates the reference clock. The active oscillator includes at least one active component. The RX circuit generates a processed RX signal by processing an RX input signal according to the LO signal. The calibration circuit checks a signal characteristic of the processed RX signal by detecting if a calibration tone exists within a receiver bandwidth, set a frequency calibration control output in response to the calibration tone being not found in the receiver bandwidth, and output the frequency calibration control output to the LO signal generation circuit. The LO signal generation circuit adjusts an LO frequency of the LO signal in response to the frequency calibration control output.

Abstract: A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

Abstract: A semiconductor package includes a base film, a semiconductor die on the base film, metal studs on the semiconductor die, shielding pillars on the base film and around the semiconductor die, a first molding compound encapsulating the semiconductor die, the metal studs, and the shielding pillars, a first re-distribution structure on the first molding compound, a second molding compound on the first re-distribution structure, through-mold-vias in the second molding compound, and a second re-distribution structure on the second molding compound and electrically connected to the through-mold-vias. The second re-distribution structure comprises an antenna.

Abstract: A wireless system includes an active oscillator and a front-end circuit. The active oscillator is used to generate and output a reference clock. The active oscillator includes at least one active component, and does not include an electromechanical resonator. The front-end circuit is used to process a transmit (TX) signal or a receive (RX) signal according to a local oscillator (LO) signal. The LO signal is derived from the reference clock.

Abstract: A semiconductor chip includes a first wireless communication circuit, a second wireless communication circuit, and an auxiliary path. The first wireless communication circuit includes a signal path, wherein the signal path includes a signal node. The second wireless communication circuit includes a mixer and a local oscillator (LO) buffer. The LO buffer is arranged to receive and buffer an LO signal, and is further arranged to provide the LO signal to the mixer. The auxiliary path is arranged to electrically connect the LO buffer to the signal node of the signal path, wherein the LO buffer is reused for a loop-back test function of the first wireless communication circuit through the auxiliary path.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit on a semiconductor substrate. First and second gate electrode structures are disposed over the substrate and are spaced laterally from one another. A common source/drain region is disposed in the semiconductor substrate between the first and second gate electrode structures. An insulator layer overlies the first and second gate electrode structures. A source/drain contact extends through the insulator layer between the first and second gate electrode structures to contact the common source/drain region. First and second sidewall spacer structures are disposed along outer sidewalls of the first and second gate electrode structures, respectively, and have first and second outer sidewalls, respectively, adjacent to the source/drain contact.

Abstract: A semiconductor chip includes a first wireless communication circuit, a local oscillator (LO) buffer, and an auxiliary path. The first wireless communication circuit has a signal path, wherein the signal path has a mixer input port and a signal node distinct from the mixer input port. The auxiliary path is used to electrically connect the LO buffer to the signal node of the signal path. The LO buffer is reused for a loop-back test function through the auxiliary path.