Abstract: The invention provides a configurable memory system including an interface layer, an overlay application layer, and a memory relocatable layer. The interface layer has a physical memory attribute module and a physical memory protection module. The interface layer manages memory attributes and memory security. The overlay application layer is coupled to the interface layer and executes an exception handler process to check if an overlay exception has occurred. The memory relocatable layer, coupled to the interface layer and the overlay application layer, having a plurality of resident service program within a first memory space, an overlay physical region within a second memory space, and a plurality of overlay virtual regions having application processes within a third memory space. The application processes of one of the overlay virtual regions is determined to be executed by the PMA module and is copied from the overlay virtual region to the overlay physical region by a processor.

Abstract: The invention provides a configurable memory system including an interface layer, an overlay application layer, and a memory relocatable layer. The interface layer has a physical memory attribute module and a physical memory protection module. The interface layer manages memory attributes and memory security. The overlay application layer is coupled to the interface layer and executes an exception handler process to check if an overlay exception has occurred. The memory relocatable layer, coupled to the interface layer and the overlay application layer, having a plurality of resident service program within a first memory space, an overlay physical region within a second memory space, and a plurality of overlay virtual regions having application processes within a third memory space. The application processes of one of the overlay virtual regions is determined to be executed by the PMA module and is copied from the overlay virtual region to the overlay physical region by a processor.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: A fabrication method of a flexible electronic package device including the following steps is provided. A tolerable bending radius of the flexible electronic package device is obtained. A minimum surface curvature radius of a selected portion of an applied carrier is obtained. A relationship of the tolerable bending radius being smaller than the minimum surface curvature radius is ensured. The flexible electronic package device is disposed on the selected portion.

Abstract: A fabrication method of a flexible electronic package device including the following steps is provided. A tolerable bending radius of the flexible electronic package device is obtained. A minimum surface curvature radius of a selected portion of an applied carrier is obtained. A relationship of the tolerable bending radius being smaller than the minimum surface curvature radius is ensured. The flexible electronic package device is disposed on the selected portion.

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

Abstract: A human-machine interface (HMI) system comprises a local operation device, a display device, a HMI display control device and a communication control device. The local operation device generates a local operation signal. The display device shows a display image corresponding to a display signal. The HMI display control device generates the display signal according to the local operation signal or a remote operation signal. The communication control device comprises a wireless communication connection port for connecting with a remote operation device. The communication control device transmits the local operation signal to the HMI display control device, transmits the display signal to the display device, and selectively transmits the display signal to the remote operation device.

Abstract: A package structure is provided. The package structure includes a substrate. The package structure also includes a hybrid pad disposed on the substrate. The hybrid pad includes a metal layer and a buffer layer connected to the metal layer. The Young's modulus of the buffer layer is less than the Young's modulus of the metal layer. The package structure further includes an electrically connecting structure disposed on the hybrid pad. The package structure includes a chip layer electrically connected to the electrically connecting structure. The package structure also includes a bonding pad disposed between the electrically connecting structure and the chip layer.

Abstract: A lead frame package including first conductive layer, first electronic component, lead frames, second conductive layer and package body. First conductive layer has conductive carriers. First electronic component has first pins. Lead frames and first pins are respectively electrically connected to conductive carriers. Second conductive layer has conductive joints respectively electrically connected to lead frames so as to be electrically connected to at least a part of conductive carriers via lead frames. Package body encapsulates first conductive layer, first electronic component, and lead frames. First conductive layer and second conductive layer are located on two opposite sides of first electronic component, respectively.

Abstract: A lead frame package including first conductive layer, first electronic component, lead frames, second conductive layer and package body. First conductive layer has conductive carriers. First electronic component has first pins. Lead frames and first pins are respectively electrically connected to conductive carriers. Second conductive layer has conductive joints respectively electrically connected to lead frames so as to be electrically connected to at least a part of conductive carriers via lead frames. Package body encapsulates first conductive layer, first electronic component, and lead frames. First conductive layer and second conductive layer are located on two opposite sides of first electronic component, respectively.

Abstract: A board defect filtering method is provided. The method includes: receiving a defect list; obtaining a plurality of defect images of a plurality of defect records on the defect list; receiving a circuit layout image; analyzing a defect location of a first defect image of the plurality of defect images according to the circuit layout image; cropping the first defect image to obtain a first cropped defect image according to the defect location; inputting the first cropping defect image to a defect classifying model; and determining whether the first defect image is a qualified product image or not according to an output result of the defect classifying model.

Abstract: A package structure is provided. The package structure includes a substrate. The package structure also includes a hybrid pad disposed on the substrate. The hybrid pad includes a metal layer and a buffer layer connected to the metal layer. The Young's modulus of the buffer layer is less than the Young's modulus of the metal layer. The package structure further includes an electrically connecting structure disposed on the hybrid pad. The package structure includes a chip layer electrically connected to the electrically connecting structure. The package structure also includes a bonding pad disposed between the electrically connecting structure and the chip layer.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.

Abstract: A human-machine interface (HMI) system comprises a local operation device, a display device, a HMI display control device and a communication control device. The local operation device generates a local operation signal. The display device shows a display image corresponding to a display signal. The HMI display control device generates the display signal according to the local operation signal or a remote operation signal. The communication control device comprises a wireless communication connection port for connecting with a remote operation device. The communication control device transmits the local operation signal to the HMI display control device, transmits the display signal to the display device, and selectively transmits the display signal to the remote operation device.

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.