Abstract: A dual-band antenna module includes a first antenna structure and a second antenna structure. The first antenna structure includes a first insulating substrate, a conductive metal layer, a plurality of grounding supports, and a first feeding pin. The second antenna structure includes a second insulating substrate, a top metal layer, a bottom metal layer, and a second feeding pin. The conductive metal layer is disposed on the first insulating substrate. The grounding supports are configured for supporting the first insulating substrate. The second insulating substrate is disposed above the first insulating substrate. The top metal layer and the bottom metal layer are respectively disposed on a top side and a bottom side of the second insulating substrate. The first frequency band signal transmitted or received by the first antenna structure is smaller than the second frequency band signal transmitted or received by the second antenna structure.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: There is provided an antenna device comprising: a chip antenna arranged on a substrate; and a metal element arranged on the same substrate as the chip antenna, wherein the metal element is arranged such that a longitudinal direction of the metal element is vertical with respect to the substrate in a direction in which a current flows in the chip antenna.

Abstract: A dual-band antenna module includes a first antenna structure and a second antenna structure. The first antenna structure includes a first insulating substrate, a conductive metal layer, a plurality of grounding supports, and a first feeding pin. The second antenna structure includes a second insulating substrate, a top metal layer, a bottom metal layer, and a second feeding pin. The conductive metal layer is disposed on the first insulating substrate. The grounding supports are configured for supporting the first insulating substrate. The second insulating substrate is disposed above the first insulating substrate. The top metal layer and the bottom metal layer are respectively disposed on a top side and a bottom side of the second insulating substrate. The first frequency band signal transmitted or received by the first antenna structure is smaller than the second frequency band signal transmitted or received by the second antenna structure.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: The present invention discloses a set of novel epigenetic biomarkers for early prediction, treatment response, recurrence and prognosis monitoring of a breast cancer. Aberrant methylation of the genes can be detected in tumor tissues and plasma samples from breast cancer patients but not in normal healthy individual. The present disclosure also discloses primers and probes used herein.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: The present invention provides a portable electronic device and a stacked antenna module thereof. The stacked antenna module includes a first antenna structure and a second antenna structure stacked on the first antenna structure and insulated from the first antenna structure. The first antenna structure includes a first carrier substrate having at least one through hole, a surrounding insulation layer disposed inside the at least one through hole, and a first feeding pin passing through the first carrier substrate. The second antenna structure includes a second carrier substrate and a second feeding pin passing through the second carrier substrate, and the second feeding pin passes through the surrounding insulation layer without contacting the surrounding insulation layer.

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.

Abstract: The present disclosure provides a back cover assembly of a portable electronic device. The back cover assembly includes a substrate structure and a coil structure. The substrate structure includes a metal substrate and a first non-metal substrate connected with the metal substrate. The coil structure is matched with an IC chip for generating an antenna magnetic field that passes through the first non-metal substrate without matching with the metal substrate. The coil structure has a first coil portion and a second coil portion connected to the first coil portion, the first coil portion is disposed above the metal substrate, the second coil portion is disposed above the first non-metal substrate, and the percentage of the first coil portion to the coil structure is larger than that the percentage of the second coil portion to the coil structure.

Abstract: The present disclosure provides a back cover assembly of a portable electronic device. The back cover assembly includes a substrate structure and a coil structure. The substrate structure includes a metal substrate and a first non-metal substrate connected with the metal substrate. The coil structure is matched with an IC chip for generating an antenna magnetic field that passes through the first non-metal substrate without matching with the metal substrate. The coil structure has a first coil portion and a second coil portion connected to the first coil portion, the first coil portion is disposed above the metal substrate, the second coil portion is disposed above the first non-metal substrate, and the percentage of the first coil portion to the coil structure is larger than that the percentage of the second coil portion to the coil structure.

Abstract: The present disclosure provides a portable electronic device and a back cover assembly thereof. The back cover assembly includes a substrate structure and a coil structure. The substrate structure includes a metal substrate and a first non-metal substrate connected with the metal substrate. The coil structure is matched with an IC chip for generating an antenna magnetic field that passes through the first non-metal substrate without matching with the metal substrate. The coil structure has a first coil portion and a second coil portion connected to the first coil portion, the first coil portion is disposed above the metal substrate, the second coil portion is disposed above the first non-metal substrate, and the percentage of the first coil portion to the coil structure is larger than that the percentage of the second coil portion to the coil structure.

Abstract: The present invention provides a portable electronic device and a stacked antenna module thereof. The stacked antenna module includes a first antenna structure and a second antenna structure stacked on the first antenna structure and insulated from the first antenna structure. The first antenna structure includes a first carrier substrate having at least one through hole, a surrounding insulation layer disposed inside the at least one through hole, and a first feeding pin passing through the first carrier substrate. The second antenna structure includes a second carrier substrate and a second feeding pin passing through the second carrier substrate, and the second feeding pin passes through the surrounding insulation layer without contacting the surrounding insulation layer.

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.

Abstract: An antenna structure includes a board unit and a coil unit. The board unit includes a metal board and an insulating board connected with or adjacent to the metal board, and the coil unit is disposed beside the same side of the metal board and the insulating board. In one embodiment, when one narrow side of the metal board and one narrow side of the insulating board connects with each other, the coil unit is disposed right under the commissure of the metal board and the insulating board. In addition, more than half or half of the area of the coil unit is covered by the insulating board, and less than half or half of the area of the coil unit is covered by the metal board. The current direction on the metal board and the current direction on the coil unit are the same as clockwise or counterclockwise.

Abstract: The present disclosure provides a portable electronic device and a back cover assembly thereof. The back cover assembly includes a substrate structure and a coil structure. The substrate structure includes a metal substrate and a first non-metal substrate connected with the metal substrate. The coil structure is matched with an IC chip for generating an antenna magnetic field that passes through the first non-metal substrate without matching with the metal substrate. The coil structure has a first coil portion and a second coil portion connected to the first coil portion, the first coil portion is disposed above the metal substrate, the second coil portion is disposed above the first non-metal substrate, and the percentage of the first coil portion to the coil structure is larger than that the percentage of the second coil portion to the coil structure.

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device and a second pass gate device disposed on a substrate. A plurality of fin structures are disposed on the substrate, and the fin structures include at least one first fin structure and at least one second fin structure. A J-shaped gate structure is disposed on the substrate, including a long part, a short part and a bridge part. At least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part of the J-shaped gate structure.

Abstract: A layout pattern of a static random access memory includes a pull-up device, a first pull-down device, a second pull-up device, a second pull-down device, a first pass gate device, a second pass gate device, a third pass gate device and a fourth pass gate device disposed on a substrate. A plurality of fin structures is disposed on the substrate, the fin structures including at least one first fin structure and at least one second fin structure. A step-shaped structure is disposed on the substrate, including a first part, a second part and a bridge part. A first extending contact feature crosses over the at least one first fin structure and the at least one second fin structure.