Patents by Inventor Chih-Ming Tzeng

Chih-Ming Tzeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240266985
    Abstract: A power integrated module (PIM) and a motor control system are provided. The PIM is adapted to drive a motor. The PIM includes a first transformation circuit, a second transformation circuit, and a plurality of shunt units. The first transformation circuit includes a plurality of first half-bridge circuits, and a coupling relationship among the first half-bridge circuits is selected, so that the first transformation circuit is operated in a rectifier mode or an inverter mode. The second transformation circuit includes a plurality of second half-bridge circuits coupled to the motor. The shunt units are respectively coupled between the second half-bridge circuits and the motor and configured to sense a current between the second transformation circuit and the motor.
    Type: Application
    Filed: April 26, 2023
    Publication date: August 8, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Shian-Chiau Chiou, Yu-Hua Cheng, Chih-Ming Tzeng
  • Publication number: 20240162114
    Abstract: A power module including at least one power device, an insulation thermally conductive layer, and a heat dissipation device is provided. The insulation thermally conductive layer has a patterned circuit layer. The power device is disposed on the patterned circuit layer and is electrically connected to the patterned circuit layer. The heat dissipation device includes a heat dissipation plate and a heat dissipation base. The heat dissipation plate has a first surface and a second surface opposite to each other, and the insulation thermally conductive layer is disposed on the first surface. The heat dissipation base is partially bonded to the heat dissipation plate, and a chamber is formed between the heat dissipation plate and the heat dissipation bases. The heat dissipation base has a plurality of first heat dissipation bumps located in the chamber.
    Type: Application
    Filed: February 9, 2023
    Publication date: May 16, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Shian-Chiau Chiou, Chun-Kai Liu, Po-Kai Chiu, Chih-Ming Tzeng, Yao-Shun Chen
  • Patent number: 10672677
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: June 2, 2020
    Assignees: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, WIN-HOUSE ELECTRONIC CO., LTD.
    Inventors: Jing-Yao Chang, Tao-Chih Chang, Kuo-Shu Kao, Fang-Jun Leu, Hsin-Han Lin, Chih-Ming Tzeng, Hsiao-Ming Chang, Chih-Ming Shen
  • Patent number: 10288696
    Abstract: An intelligent diagnosis system for a power module. The system includes a power module, a hardware checking module and a diagnostic module. The power module has a temperature sensing element for obtaining a temperature difference between a starting minimum temperature and a current temperature. The hardware checking module has a current sensing element, a voltage sensing element and a magnetic coupling closed loop detection element for obtaining the current, the output voltage and the input voltage of the power module, and the hardware loop status, respectively. The diagnostic module calculates the number of cycles that have been operated, a measured impedance and an instantaneous power based on those measurement results, and calculating a risk index based on the number of cycles that have been operated, the temperature difference, the measured impedance, the instantaneous power and the hardware loop status, thereby determining the accumulation of the abnormality index record.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: May 14, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Chung Chiu, Chih-Ming Tzeng, Li-Ling Liao, Yu-Lin Chao, Chih-Ming Shen, Ming-Kaan Liang, Chun-Kai Liu, Ming-Ji Dai
  • Publication number: 20180261519
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.
    Type: Application
    Filed: May 14, 2018
    Publication date: September 13, 2018
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Win-House Electronic Co., Ltd.
    Inventors: Jing-Yao CHANG, Tao-Chih CHANG, Kuo-Shu KAO, Fang-Jun LEU, Hsin-Han LIN, Chih-Ming TZENG, Hsiao-Ming CHANG, Chih-Ming SHEN
  • Publication number: 20180136287
    Abstract: An intelligent diagnosis system for a power module. The system includes a power module, a hardware checking module and a diagnostic module. The power module has a temperature sensing element for obtaining a temperature difference between a starting minimum temperature and a current temperature. The hardware checking module has a current sensing element, a voltage sensing element and a magnetic coupling closed loop detection element for obtaining the current, the output voltage and the input voltage of the power module, and the hardware loop status, respectively. The diagnostic module calculates the number of cycles that have been operated, a measured impedance and an instantaneous power based on those measurement results, and calculating a risk index based on the number of cycles that have been operated, the temperature difference, the measured impedance, the instantaneous power and the hardware loop status, thereby determining the accumulation of the abnormality index record.
    Type: Application
    Filed: November 16, 2016
    Publication date: May 17, 2018
    Inventors: Chih-Chung CHIU, Chih-Ming TZENG, Li-Ling LIAO, Yu-Lin CHAO, Chih-Ming SHEN, Ming-Kaan LIANG, Chun-Kai LIU, Ming-Ji DAI
  • Publication number: 20170084521
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.
    Type: Application
    Filed: May 4, 2016
    Publication date: March 23, 2017
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Win-House Electronic Co.,Ltd.
    Inventors: Jing-Yao CHANG, Tao-Chih CHANG, Kuo-Shu KAO, Fang-Jun LEU, Hsin-Han LIN, Chih-Ming TZENG, Hsiao-Ming CHANG, Chih-Ming SHEN
  • Patent number: 9601474
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: March 21, 2017
    Assignee: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20150364457
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: June 15, 2015
    Publication date: December 17, 2015
    Applicant: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Patent number: 9059181
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: June 16, 2015
    Assignee: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20140217587
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: November 18, 2013
    Publication date: August 7, 2014
    Applicant: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsaio, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Patent number: 8587091
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: November 19, 2013
    Assignee: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Patent number: 8314482
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: November 20, 2012
    Assignee: Invensas Corporation
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20120267765
    Abstract: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: June 26, 2012
    Publication date: October 25, 2012
    Applicant: Industrial Technology Research Institute
    Inventors: Shou-Lung CHEN, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Patent number: 7528009
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: May 5, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20080029870
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: October 5, 2007
    Publication date: February 7, 2008
    Applicant: Industrial Technology Research Institute
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Patent number: 7294920
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Grant
    Filed: July 22, 2005
    Date of Patent: November 13, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20070197018
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: April 19, 2007
    Publication date: August 23, 2007
    Applicant: Industrial Technology Research Institute
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu
  • Publication number: 20060019484
    Abstract: This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.
    Type: Application
    Filed: July 22, 2005
    Publication date: January 26, 2006
    Applicant: Industrial Technology Research Institute
    Inventors: Shou-Lung Chen, Ching-Wen Hsiao, Yu-Hua Chen, Jeng-Dar Ko, Chih-Ming Tzeng, Jyh-Rong Lin, Shan-Pu Yu