Abstract: A controlling method for semiconductor process auxiliary apparatus, a control assembly and a manufacturing system are provided. The controlling method includes the following steps. At least one manufacturing parameter of a semiconductor manufacturing processing apparatus are obtained. An energy adjusting signal is generated according to the manufacturing parameter. An auxiliary apparatus controlling signal is generated according to the energy adjusting signal. The semiconductor process auxiliary apparatus is controlled according to the semiconductor auxiliary apparatus controlling signal.

Abstract: A photonic assembly includes: an electronic integrated circuits (EIC) die including a semiconductor substrate, semiconductor devices located on a horizontal surface of the semiconductor substrate, first dielectric material layers embedding first metal interconnect structures, a dielectric pillar structure vertically extending through each layer selected from the first dielectric material layers, a first bonding-level dielectric layer embedding first metal bonding pads, wherein a first subset of the first metal bonding pads has an areal overlap with the dielectric pillar structure in a plan view; and a photonic integrated circuits (PIC) die including waveguides, photonic devices, second dielectric material layers embedding second metal interconnect structures, a second bonding-level dielectric layer embedding second metal bonding pads, wherein the second metal bonding pads are bonded to the first metal bonding pads.

Abstract: A method includes forming a dummy gate structure over a substrate; forming a source/drain structure over the substrate; replacing the dummy gate structure with a metal gate structure; forming a protection cap over the metal gate structure; forming a source/drain contact over the source/drain structure; performing a selective deposition process to form a first etch stop layer on the protection cap, in which the selective deposition process has a faster deposition rate on the protection cap than on the source/drain contact; depositing a second etch stop layer over the first etch stop layer the source/drain contact; etching the second etch stop layer to form an opening; and forming a via contact in the opening.

Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: extracting a first gas from a chamber via a first route; blocking a second route used to be pumped down to chuck a wafer placed in the chamber, wherein the second route connects the chamber and the first route; and providing a second gas via a third route to purge a junction of the first route and the second route.

Abstract: A semiconductor package includes a photonic integrated circuit (PIC) die having a photonic layer, and an electronic integrated circuit (EIC) die bonded to the PIC die. The EIC die includes an optical region that allows the transmission of optical signals through the optical region towards the photonic layer, and a peripheral region outside of the optical region. The optical region includes optical concave/convex structures, a protection film and optically transparent material layers. The optical concave/convex structures are formed in the semiconductor structure. The protection film is conformally disposed over the optical concave/convex structures. The optically transparent material layers are disposed over the protection film and filling up the optical region. The peripheral region includes first bonding pads bonded to the photonic integrated circuit die, and via structures connected to the first bonding pads, wherein the protection film is laterally surrounding sidewalls of the via structures.

Abstract: A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.

Abstract: There is provided a wearable device including at least one light source, a light sensor and a processor. The processor generates a peak interval plot according to one of at least two light detection signals detected by the light sensor when the at least one light source emits light, and generates an oxygen saturation plot according to two of the one of at least two light detection signals detected by the light sensor when the at least one emits light. The processor further determines an Apnea Hypopnea Index (AHI) score according to the peak interval plot, determines an Oxygen Desaturation Index (ODI) score according to the oxygen saturation plot and fits an obstructive sleep apnea level index corresponding to the AHI score and the ODI score.

Abstract: A device includes a substrate, an isolation structure over the substrate, a gate structure over the isolation structure, a gate spacer on a sidewall of the gate structure, a source/drain (S/D) region adjacent to the gate spacer, a silicide on the S/D region, a dielectric liner over a sidewall of the gate spacer and on a top surface of the isolation structure, wherein a bottom surface of the dielectric liner is above a top surface of the silicide layer and spaced away from the top surface of the silicide layer in a cross-sectional plane perpendicular to a lengthwise direction of the gate structure.

Abstract: A method includes receiving a carrier, the carrier including a carrier body, a first filter, and a housing securing the first filter to the carrier body. The method further includes uninstalling the housing from the carrier, replacing the first filter with a second filter, reinstalling the housing on the carrier body, and inspecting the second filter. Inspecting the second filter includes using an automatic inspection mechanism to detect surface flatness of the second filter.

Abstract: A sprayer includes: a container; a passage including a transparent window, a first opening, a second opening and a resonator, wherein when liquid in the container is passed through the resonator via the first opening, the liquid is emitted as a gas via the second opening; and a removable detection unit disposed outside of the passage. The removable detection unit includes: a light source for illuminating the gas in the passage; an optical sensor disposed to detect a parameter of light reflected by the gas; and a processor coupled to the optical sensor for stopping the resonator from generating the gas when the parameter is below a threshold. The passage further includes a cavity disposed on a bottom surface of the passage in front of the optical sensor, wherein when the gas in the passage contacts the bottom surface, resultant water vapour will enter the cavity.

Abstract: A method includes receiving a substrate having a front side and a back side, forming a shallow trench in the substrate from the front side, forming a liner layer including a first dielectric material in the shallow trench, depositing a second dielectric material different from the first dielectric material on the liner layer to form an isolation feature in the shallow trench, forming an active region surrounded by the isolation feature, forming a gate stack on the active region, forming a source/drain (S/D) feature on the active region and on a side of the gate stack, thinning down the substrate from the back side such that the isolation feature is exposed, etching the active region to expose the S/D feature from the back side to form a backside trench, and forming a backside via feature landing on the S/D feature and surrounded by the liner layer.

Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.

Abstract: A display may include an array of pixels such as light-emitting diode pixels. The pixels may include multiple circuitry decks that each include one or more circuit components such as transistors, capacitors, and/or resistors. The circuitry decks may be vertically stacked. Each circuitry deck may include a planarization layer formed from a siloxane material that conforms to underlying components and provides a planar upper surface. In this way, circuitry components may be vertically stacked to mitigate the size of each pixel footprint. The circuitry components may include capacitors that include both a high-k dielectric layer and a low-k dielectric layer. The display pixel may include a via with a width of less than 1 micron.

Abstract: A liquid-cooling heat sink includes a substrate, a fin assembly, and a housing. The substrate has a longitudinal direction. The fin assembly is arranged on the substrate and includes multiple fins arranged at interval to form flow channels along the longitudinal direction. Each flow channel includes an inlet and an outlet opposite to each other. A turbulence structure divides a cross-section of at least one of the flow channels into at least two diverging passages. The housing arranged on the substrate covers the inlets and includes an inlet port and a chamber. Accordingly, the number of fins may be increased in a fixed space, and each flow channel has a smaller cross-sectional area to increase flow velocity of a dielectric liquid. Moreover, this reduces the flow resistance of the dielectric liquid in a turbulent flow area in each flow channel to improve the heat dissipation efficiency.

Abstract: An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.

Abstract: A liquid-cooling heat dissipation device includes a substrate, a fin assembly, a shell and a shunt component. The fin assembly is disposed on the substrate and has a plurality of channels parallelly arranged, and each of the channels has an inlet and an outlet opposite to each other. The shell is disposed on the substrate and has a liquid input port, a chamber is jointly formed by the shell and the substrate, and the chamber is located between the liquid input port and each of the inlets. The shunt component is disposed in the shell and has a plurality of manifold passages, the liquid input port is in communication with the chamber and each of the inlets through each of the manifold passages. Accordingly, the amount of fin member is increased in a fixed space to increase the heat dissipating efficiency.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate; a metal gate structure disposed over a channel region of the semiconductor fin; a first interlayer dielectric (ILD) layer disposed over a source/drain (S/D) region next to the channel region of the semiconductor fin; and a first conductive feature including a first conductive portion disposed on the metal gate structure and a second conductive portion disposed on the first ILD layer, wherein a top surface of the first conductive portion is below a top surface of the second conductive portion, a first sidewall of the first conductive portion connects a lower portion of a first sidewall of the second conductive portion.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.