Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A method for forming a case for an electronic device and a manufactured case structure for an electronic device are provided. The method for forming a case for an electronic device comprises the following steps. Provide a plastic material. Provide a plurality of PCM microcapsules. Mix the plastic material and the plurality of PCM microcapsules so as to form a housing material. Form a case from the housing material by injection molding. The manufactured case structure for an electronic device comprises a plastic layer and a plurality of PCM microcapsules. The plurality of PCM microcapsules are dispersed in the plastic layer.

Abstract: A method for a case for an electronic device is provided. The method includes two steps. More specifically, in the method, a first plastic layer is formed by injection molding. Subsequently, a PCM microcapsule layer is formed on one side of the first plastic layer by injection molding.

Abstract: A method for forming a case for an electronic device and a manufactured case structure for an electronic device are provided. The method for forming a case for an electronic device comprises the following steps. Provide a plastic material. Provide a plurality of PCM microcapsules. Mix the plastic material and the plurality of PCM microcapsules so as to form a housing material. Form a case from the housing material by injection molding. The manufactured case structure for an electronic device comprises a plastic layer and a plurality of PCM microcapsules. The plurality of PCM microcapsules are dispersed in the plastic layer.