Abstract: Semiconductor devices are provided. A semiconductor device includes a power switch, a first power mesh and a second power mesh. The power switch has a first terminal and a second terminal. The first power mesh is directly connected to the first terminal of the power switch. The second power mesh is directly connected to the second terminal of the power switch. The first power mesh includes a first power rail over the power switch and extending in a first direction. The second power mesh includes a second power rail under the power switch and extending in the first direction. The first and second power rails are separated from each other.

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.

Abstract: A method of forming an electronic device including: providing an assembly, wherein the assembly includes a substrate, an optical film, a plurality of color filters and a defect, wherein the plurality of color filters and the defect are disposed between the substrate and the optical film; and using a laser pulse to form a first processed area that corresponds to the defect in the optical film, wherein the first processed area at least partially overlaps at least two of the plurality of color filters.

Abstract: An electronic package and a heat dissipation structure thereof are provided, in which a supporting member of the heat dissipation structure is disposed around an outer periphery of a central area and has grooves at corner areas. In this way, the grooves can avoid stress concentration in the corner areas, and the rest of the supporting member can well connect and fix the heat dissipation structure and a carrying structure, so as to suppress warpage of the entire electronic package and prevent delamination.

Abstract: An electronic package and a heat dissipation structure thereof are provided, in which supporting members of the heat dissipation structure are arranged in edge areas, and no supporting member is arranged in corner areas. In this way, the supporting members are interrupted at the corner areas, so that stress can be prevented from concentrating in the corner areas, and the entire electronic package can be prevented from warping and delamination.

Abstract: An electronic package is provided, in which an electronic module including a first electronic element and a second electronic element is disposed on a carrier structure embedded with a third electronic element, and the third electronic element is a photonic chip electrically connected to the electronic module. Therefore, with this configuration, it is beneficial to reduce a layout area of the carrier structure to meet the requirement of miniaturization.

Abstract: An electronic package and manufacturing method thereof are provided, in which an electronic module served as a bridge element and a plurality of conductive pillars are embedded in a packaging layer, a routing structure is formed on the packaging layer, and a plurality of electronic elements are disposed on the routing structure, such that the electronic elements electrically bridge the electronic module via the routing structure.

Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.

Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.

Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.

Abstract: A nucleic acid detection host includes a host body, a detection kit installation area, a sample heating area, a sampling area, and an image collection unit. The detection kit installation area is configured to detachably install a nucleic acid detection kit. The sampling area is disposed above the detection kit installation area and is connected to the detection kit installation area. The sampling area is configured to add a detection solution into the nucleic acid detection kit. The image collection unit is configured to collect an image of the nucleic acid detection kit. A nucleic acid detection device including the nucleic acid detection host is also disclosed. The nucleic acid detection device has a simple structure, which is portable, flexible, and convenient, and can be used at home.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A piping system is provided, connecting a plurality of scrubbers which are disposed on a supporting structure, including a collecting pipe and a drain pipe. The collecting pipe has a main body and a plurality of protrusions, wherein the main body has an outer surface and a first central axis. The protrusions are protruding from the outer surface, and the first central axis is perpendicular to the supporting structure. The collecting pipe communicates with the scrubbers via the protrusions. The drain pipe is disposed under the supporting structure and has a second central axis, wherein the collecting pipe is extended through the supporting structure and connects to the drain pipe, and the first central axis is perpendicular to the second central axis.

Abstract: A piping system is provided, connecting a plurality of scrubbers which are disposed on a supporting structure, including a collecting pipe and a drain pipe. The collecting pipe has a main body and a plurality of protrusions, wherein the main body has an outer surface and a first central axis. The protrusions are protruding from the outer surface, and the first central axis is perpendicular to the supporting structure. The collecting pipe communicates with the scrubbers via the protrusions. The drain pipe is disposed under the supporting structure and has a second central axis, wherein the collecting pipe is extended through the supporting structure and connects to the drain pipe, and the first central axis is perpendicular to the second central axis.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.