Abstract: A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate structure disposed over and interleaved with the stack of semiconductor layers, the metal gate structure including a gate electrode disposed over a gate dielectric layer, a first isolation structure disposed adjacent to a first sidewall of the stack of semiconductor layers, where the gate dielectric layer fills space between the first isolation structure and the first sidewall of the stack of semiconductor layers, and a second isolation structure disposed adjacent to a second sidewall of the stack of semiconductor layers, where the gate electrode fills the space between the second isolation structure and the second sidewall of the stack of semiconductor layers.

Abstract: The present disclosure provides a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. The present disclosure also includes forming a trench between neighboring source/drain features to remove bridging between the neighboring source/drain features. In some embodiments, the trenches between the source/drain features are formed by etching from the backside of the substrate.

Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.

Abstract: A method includes forming semiconductive sheets over a substrate and arranged in a vertical direction; forming source/drain regions on either side of each of the semiconductive sheets; forming first air gap inner spacers interleaving with the semiconductive sheets; forming a gate around each of the semiconductive sheets, wherein the first air gap inner spacers are laterally between the gate and a first one of the source/drain regions.

Abstract: A power supply control system for a multi-phase power converter is provided. The power supply control system classifies each of a plurality of power converters into one of a plurality of power groups. The power supply control system selects one of the plurality of power converters classified in each of the plurality of power groups as a master power converter, and selects others of the plurality of power converters in each of the plurality of power groups as slave power converters. The power supply control system, according to data of the master power converter, outputs an on-time controlling signal for controlling an on-time of a high-side switch and an on-time of a low-side switch of each of the plurality of power converters, so as to control the plurality of power converters for supplying appropriate power to electronic devices.

Abstract: Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. The methods described herein allow for complex shapes (e.g., “L-shaped”) to be etched into a multi-layered stack to form fins used in the formation of active regions of the GAA nanostructure transistor structures. In some embodiments, the active regions may be formed with a first channel width and a first source/drain region having a first width and a second channel width and a second source/drain region having a second width that is less than the first width.

Abstract: A first gate-all-around (GAA) transistor and a second GAA transistor may be formed on a substrate. The first GAA transistor includes at least one silicon plate, a first gate structure, a first source region, and a first drain region. The second GAA transistor includes at least one silicon-germanium plate, a second gate structure, a second source region, and a second drain region. The first GAA transistor may be an n-type field effect transistor, and the second GAA transistor may be a p-type field effect transistor. The gate electrodes of the first gate structure and the second gate structure may include a same conductive material. Each silicon plate and each silicon-germanium plate may be single crystalline and may have a same crystallographic orientation for each Miller index.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first channel structures and second channel structures formed over the substrate. The semiconductor structure also includes a dielectric fin structure formed between the first channel structures and the second channel structures. In addition, the dielectric fin structure includes a core portion and first connecting portions connected to the core portion. The semiconductor structure also includes a gate structure including a first portion. In addition, the first portion of the gate structure is formed around the first channel structures and covers the first connecting portions of the dielectric fin structure.

Abstract: A device includes a transistor. The transistor includes a plurality of stacked channels, a source/drain region coupled to the stacked channels, and a gate metal wrapped around the stacked channels. The transistor includes a plurality of inner spacers, each inner spacer being positioned laterally between the gate metal and the source/drain region and including a gap and an inner spacer liner layer between the gate metal and the source/drain region.

Abstract: A power converter having a spectrum spreading control mechanism is provided. In the power converter, a buffer circuit, according to a plurality of energy upper limit values respectively of a plurality of frequency bands falling within a switching frequency range, determines a plurality of buffering ratios corresponding respectively to the plurality of frequency bands. In the power converter, the buffer circuit buffers a voltage signal from an inductor based on one of the plurality of buffering ratios that corresponds to one of the plurality of frequency bands within which a switching frequency of the high-side switch and the low-side switch currently falls. In the power converter, an on-time determining circuit determines an on-time of the high-side switch and an on-time of the low-side switch, according to the buffered voltage signal.

Abstract: A switching charger having fast dynamic response for transition of a load is provided. A first terminal of a high-side switch is coupled to an input voltage. A first terminal of a low-side switch is connected to a second terminal of the high-side switch. A first terminal of an inductor is connected to a node between the first terminal of the low-side switch and the second terminal of the high-side switch. A second terminal of the inductor is connected to a first terminal of a capacitor. A constant on-time circuit determines a duty cycle of an on-time signal according to the input voltage and an output voltage of a node between the second terminal of the inductor and the first terminal of the capacitor. A control circuit controls a driver circuit to drive the high-side switch and the low-side switch according to the on-time signal.

Abstract: A method for manufacturing an integrated circuit device is provided. The method includes depositing an epitaxial stack comprising alternative first and second semiconductor layers over a semiconductor substrate; patterning the epitaxial stack to form first and second semiconductor fins; removing the first semiconductor layers in the first and second semiconductor fins, while leaving a first set of the second semiconductor layers in the first semiconductor fin and a second set of the second semiconductor layers in the second semiconductor fin; forming a gate dielectric layer around the first and second sets of the second semiconductor layers; depositing a gate metal layer over the gate dielectric layer; etching a recess in the gate metal layer and between the first and second sets of the second semiconductor layers, wherein the gate metal layer has a first portion below the recess; and forming a dielectric feature in the recess.

Abstract: A device includes a substrate. A first channel region of a first transistor overlies the substrate and a source/drain region is in contact with the first channel region. The source/drain region is adjacent to the first channel region along a first direction, and the source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A dielectric fin structure is adjacent to the source/drain region along a second direction that is transverse to the first direction, and the dielectric fin structure has an upper surface, a lower surface, and an intermediate surface that is disposed between the upper and lower surfaces. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region and on the intermediate surface of the dielectric fin structure.

Abstract: A power converter having an overvoltage protection mechanism is provided. A node between a second terminal of the high-side switch and a first terminal of a low-side switch is connected to an inductor. When an output current or an output voltage of the power converter must be released, the output current of the power converter flows to the input power source sequentially through the inductor, the high-side switch being turned on. Under this condition, when an overvoltage protecting circuit determines that a current or a voltage of the inductor or a current or a voltage of the input power source is larger than a threshold, the output current of the power converter flows to a ground through the overvoltage protecting circuit.

Abstract: A sensor is provided. A first terminal of a first current source and a first terminal of a first transistor are connected to a cathode of the photodiode. A control terminal of a second transistor is connected to an output terminal of a first operational amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor through a first current mirror circuit. A second terminal of the second transistor is connected to a second current source, a second input terminal of a second operational amplifier and a first terminal of a third transistor. A first input terminal of the second operational amplifier is connected to the first terminal of the first transistor. A control terminal of the third transistor is connected to an output terminal of the second operational amplifier.

Abstract: A switching charger for supplying stable power is provided. First input terminals of first and fourth operational amplifiers and a second input terminal of a second operational amplifier are connected to a battery. A second input terminal of the first operational amplifier is coupled to a reference voltage. A first input terminal of the second operational amplifier and a second input terminal of the fourth operational amplifier are connected to an inductor. A first input terminal of a third operational amplifier is connected to an input power source. A second input terminal of the third operational amplifier is connected to a system circuit. A first selector circuit is connected to output terminals of the third and fourth operational amplifiers. A second selector circuit is connected to output terminals of the first and second operational amplifiers and the first selector circuit.

Abstract: Disclosed are methods and systems for a WLAN device operating on DFS channels to calibrate the PRI as well as delays between partial pulses of received radar pulses that are impaired due to channel and filtering effects. The calibrated PRI may approximate the PRI of the transmitted pulses. The calibrated delay between the partial pulses estimates the interval between two partial pulses that originally belong to the same transmitted pulse. Using the calibrated PRI and the calibrated delay between partial pulses, the WLAN device may reconstruct the original pulses from received impaired pulses even when the impaired pulses are delayed and partial pulses of the original pulses. The WLAN device may use the calibrated results to correct the shortened PW and varying PRI of the impaired pulses to restore the partial pulses to their full PW with a relatively uniform PRI, increasing the probability of detecting the radar signals.

Abstract: A switching charger having fast dynamic response for transition of a load is provided. A first terminal of a high-side switch is coupled to an input voltage. A first terminal of a low-side switch is connected to a second terminal of the high-side switch. A first terminal of an inductor is connected to a node between the first terminal of the low-side switch and the second terminal of the high-side switch. A second terminal of the inductor is connected to a first terminal of a capacitor. A constant on-time circuit determines a duty cycle of an on-time signal according to the input voltage and an output voltage of a node between the second terminal of the inductor and the first terminal of the capacitor. A control circuit controls a driver circuit to drive the high-side switch and the low-side switch according to the on-time signal.

Abstract: A power saving system of a battery charger is provided. A control terminal of a first transistor receives a wake-up signal. A counter is connected to a first terminal of the first transistor. The counter determines whether or not a working period of the wake-up signal from the first transistor is larger than a time threshold to output a counting signal. When the counting signal indicates that the working period of the wake-up signal is not larger than the time threshold, the counter and electronic components of an electronic device are turned off, thereby saving power of a battery. When the counting signal indicates that the working period of the wake-up signal is larger than the time threshold, the electronic device is switched from a power saving mode to a normal operation mode. In the normal operation mode, the battery can supply power to the electronic device.

Abstract: A power saving system of a battery charger is provided. A control terminal of a first transistor receives a wake-up signal. A counter is connected to a first terminal of the first transistor. The counter determines whether or not a working period of the wake-up signal from the first transistor is larger than a time threshold to output a counting signal. When the counting signal indicates that the working period of the wake-up signal is not larger than the time threshold, the counter and electronic components of an electronic device are turned off, thereby saving power of a battery. When the counting signal indicates that the working period of the wake-up signal is larger than the time threshold, the electronic device is switched from a power saving mode to a normal operation mode. In the normal operation mode, the battery can supply power to the electronic device.