Patents by Inventor Chih-Pin Tsai

Chih-Pin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220010059
    Abstract: A polyhydroxyalkanoates extraction system comprises a pretreatment subsystem, an extraction subsystem and a recycling subsystem. The pretreatment subsystem comprises a fermentation device and an activation device so as to carry out a microorganism acclimation process. The extraction subsystem comprises a freezing device, a pretreatment device and an extraction device. The extraction subsystem is used for receiving a third sludge so that the third sludge is subjected to a freezing process, a pretreatment process, an extraction process and a purification process in the freezing device to form a polyhydroxyalkanoates mixture, and the extraction device performs a precipitation process to generate polyhydroxyalkanoates precipitate. The recycling subsystem comprises an aerobic sludge digestion device and a sequencing batch reactor activated sludge treatment device so as to carry out an aerobic sludge digestion process and a sequencing batch reactor activated sludge process.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 13, 2022
    Inventors: Yung-Pin TSAI, Ku-Fan CHEN, Meng-Shan LU, Chih-Chi YANG, Hao SHIU
  • Patent number: 9803109
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: October 31, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hung-Tsung Huang, Ming-Chih Yeh, Chih-Pin Tsai
  • Patent number: 9752057
    Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: September 5, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Hui-Fang Hou, William Ward, Ming-Chih Yeh, Chih-Pin Tsai
  • Publication number: 20160222254
    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 4, 2016
    Inventors: Hung-Tsung HUANG, Ming-Chih YEH, Chih-Pin TSAI
  • Publication number: 20160053381
    Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.
    Type: Application
    Filed: August 22, 2014
    Publication date: February 25, 2016
    Inventors: Chih-Pin TSAI, Ming-Chih Yeh, Glenn Whitener, Lung-Tai Lu
  • Publication number: 20150221521
    Abstract: A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.
    Type: Application
    Filed: February 6, 2015
    Publication date: August 6, 2015
    Inventors: Hui-Fang HOU, William Ward, Ming-Chih Yeh, Chih-Pin Tsai