Abstract: A 3D CMOS image sensor is provided in the present invention, including a semiconductor substrate, a photodiode and a well formed in the semiconductor substrate, a shallow trench isolation (STI) layer formed on a front surface of the semiconductor substrate, a fin protruding upwardly from the semiconductor substrate through the STI layer, wherein the fin is composed of the photodiode and the well, a first gate spanning the photodiode portion and the well portion abutting the photodiode portion of the fin to constitute a transfer transistor, a second gate spanning in the middle of the well portion of the fin to constitute a reset transistor, and a floating diffusion region in the well portion of the fin between the first gate and the second gate electrically connecting the transfer transistor and the reset transistor.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: An illumination device includes a supporting base, at least two supports and at least two semiconductor light emitting elements. The supports are disposed on the supporting base and coupled to each other. The semiconductor light emitting elements are respectively coupled to the supports. The semiconductor light emitting element includes a transparent substrate and a light emitting diode (LED) structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface. At least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface.

Abstract: An illumination device includes a supporting base, at least two supports and at least two semiconductor light emitting elements. The supports are disposed on the supporting base and coupled to each other. The semiconductor light emitting elements are respectively coupled to the supports. The semiconductor light emitting element includes a transparent substrate and a light emitting diode (LED) structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface. At least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface.