Patents by Inventor Chih Ping Liao
Chih Ping Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250079162Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: ApplicationFiled: November 19, 2024Publication date: March 6, 2025Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue
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Publication number: 20250079177Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.Type: ApplicationFiled: November 7, 2024Publication date: March 6, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: En-Ping LIN, Yu-Ling KO, I-Chung WANG, Yi-Jen CHEN, Sheng-Kai JOU, Chih-Teng LIAO
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Patent number: 12204163Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: February 5, 2024Date of Patent: January 21, 2025Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Patent number: 12183573Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: GrantFiled: August 4, 2023Date of Patent: December 31, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue
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Publication number: 20240278295Abstract: A method of cleaning includes placing a semiconductor device manufacturing tool component made of quartz on a support. A cleaning fluid inlet line is attached to a first open-ended tubular quartz projection extending from an outer main surface of the semiconductor device manufacturing tool component. A cleaning fluid is applied to the semiconductor device manufacturing tool component by introducing the cleaning fluid through the cleaning fluid inlet line and the tubular quartz projection.Type: ApplicationFiled: April 18, 2024Publication date: August 22, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Chen HO, Chih Ping LIAO, Ker-Hsun LIAO, Chi-Hsun LIN
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Publication number: 20240247700Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.Type: ApplicationFiled: April 4, 2024Publication date: July 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Chen HO, Chih Ping LIAO, Chien Ting LIN, Jie-Ying YANG, Wei-Ming WANG, Ker-Hsun LIAO, Chi-Hsun LIN
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Patent number: 12000455Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.Type: GrantFiled: March 10, 2022Date of Patent: June 4, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi Chen Ho, Chih Ping Liao, Chien Ting Lin, Jie-Ying Yang, Wei-Ming Wang, Ker-Hsun Liao, Chi-Hsun Lin
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Patent number: 11986869Abstract: A method of cleaning includes placing a semiconductor device manufacturing tool component made of quartz on a support. A cleaning fluid inlet line is attached to a first open-ended tubular quartz projection extending from an outer main surface of the semiconductor device manufacturing tool component. A cleaning fluid is applied to the semiconductor device manufacturing tool component by introducing the cleaning fluid through the cleaning fluid inlet line and the tubular quartz projection.Type: GrantFiled: June 6, 2022Date of Patent: May 21, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi Chen Ho, Chih Ping Liao, Ker-hsun Liao, Chi-Hsun Lin
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Patent number: 11854800Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: GrantFiled: May 25, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue
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Publication number: 20230390813Abstract: A method of cleaning includes placing a semiconductor device manufacturing tool component made of quartz on a support. A cleaning fluid inlet line is attached to a first open-ended tubular quartz projection extending from an outer main surface of the semiconductor device manufacturing tool component. A cleaning fluid is applied to the semiconductor device manufacturing tool component by introducing the cleaning fluid through the cleaning fluid inlet line and the tubular quartz projection.Type: ApplicationFiled: June 6, 2022Publication date: December 7, 2023Inventors: Yi Chen HO, Chih Ping LIAO, Ker-hsun LIAO, Chi-Hsun LIN
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Publication number: 20230386832Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: ApplicationFiled: August 4, 2023Publication date: November 30, 2023Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue
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Publication number: 20230343559Abstract: Some implementations described herein provide techniques and apparatuses for overcoming forces that may deflect an injector nozzle into an interior wall of a thin-film furnace. The implementations include a fixture that is coupled to the injector nozzle. The fixture is configurable to lock to a selected property of the injector nozzle to maintain, between a portion of the injector nozzle and the interior wall, a gap. In this way, the portion of the injector nozzle is prevented from colliding with the interior wall and dislodging particulates that may contaminate semiconductor product fabricated using the thin-film furnace.Type: ApplicationFiled: April 21, 2022Publication date: October 26, 2023Inventors: Yi Chen HO, Chih Ping LIAO, Shih Hao YANG, Wei-Ming WANG, Chien Ting LIN, Jie-Ying YANG, Chih-Che TANG, Kuo Kang TENG, Ming-Hui YU, Ker-hsun LIAO, Chi-Hsun LIN
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Publication number: 20230287952Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.Type: ApplicationFiled: March 10, 2022Publication date: September 14, 2023Inventors: Yi Chen HO, Chih Ping LIAO, Chien Ting LIN, Jie-Ying YANG, Wei-Ming WANG, Ker-Hsun LIAO, Chi-Hsun LIN
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Publication number: 20210280414Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: ApplicationFiled: May 25, 2021Publication date: September 9, 2021Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue
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Patent number: 11037781Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.Type: GrantFiled: May 20, 2019Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Ya-Wen Chiu, Cheng-Po Chau, Yi Che Chan, Chih Ping Liao, YungHao Wang, Sen-Hong Syue