Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: An integrated circuit device includes a substrate, an isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The isolation feature is in the transition region. A top surface of the isolation feature has a first portion and a second portion lower than the first portion, the second portion of the top surface of the isolation feature is between the cell region and the first portion of the top surface of the isolation feature, and a bottom surface of the isolation feature has a step height directly below the second portion of the top surface of the isolation feature. The is memory cell over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: Some embodiments of the present application are directed towards an integrated circuit (IC). The integrated circuit includes a semiconductor substrate having a peripheral region and a memory cell region separated by an isolation structure. The isolation structure extends into a top surface of the semiconductor substrate and comprises dielectric material. A logic device is arranged on the peripheral region. A memory device is arranged on the memory region. The memory device includes a gate electrode and a memory hardmask over the gate electrode. An anti-dishing structure is disposed on the isolation structure. An upper surface of the anti-dishing structure and an upper surface of the memory hardmask have equal heights as measured from the top surface of the semiconductor substrate.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: An integrated circuit device includes a substrate, a first isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The first isolation feature is in the transition region. The substrate includes a protrusion portion between a first portion and a second portion of the first isolation feature, the second portion is between the first portion and the cell region, and a top surface of the first portion of the first isolation feature has a first part and a second part lower than the first part, and the second part is between the first part and the second portion of the first isolation feature. The memory cell is over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: An integrated circuit device includes a semiconductor substrate having a memory area and a logic area. A memory cell in the memory area includes a select gate separated from a floating gate by a floating gate spacer. A select gate spacer is formed on a side of the select gate opposite the floating gate. The select gate spacer has a uniform thickness over most of the select gate. The first layer of the select gate spacer may be formed by oxidizing the select gate electrode. A second layer of the select gate spacer may be formed by atomic layer deposition. The memory area may be covered by a protective layer while spacers are formed adjacent logic gates in the logic region.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor device includes a substrate, an isolation feature, a floating gate, and a control gate. The substrate has a protruding portion. The isolation feature surrounds the protruding portion of the substrate. The floating gate is over the protruding portion of the substrate, in which a sidewall of the floating gate is aligned with a sidewall of the protruding portion of the substrate. The control gate is over the floating gate.

Abstract: An integrated circuit device includes a semiconductor substrate having a memory area and a logic area. A memory cell in the memory area includes a select gate separated from a floating gate by a floating gate spacer. A select gate spacer is formed on a side of the select gate opposite the floating gate. The select gate spacer has a uniform thickness over most of the select gate. The first layer of the select gate spacer may be formed by oxidizing the select gate electrode. A second layer of the select gate spacer may be formed by atomic layer deposition. the memory area may be covered by a protective layer while spacers are formed adjacent logic gates in the logic region.

Abstract: An integrated circuit device includes a substrate, a first isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The first isolation feature is in the transition region. The substrate includes a protrusion portion between a first portion and a second portion of the first isolation feature, the second portion is between the first portion and the cell region, and a top surface of the first portion of the first isolation feature has a first part and a second part lower than the first part, and the second part is between the first part and the second portion of the first isolation feature. The memory cell is over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: Various embodiments of the present application are directed to an integrated circuit (IC) comprising a floating gate test device with a cell-like top layout, as well as a method for forming the IC. In some embodiments, the IC comprises a semiconductor substrate and the floating gate test device. The floating gate test device is on the semiconductor substrate, and comprises a floating gate electrode and a control gate electrode overlying the floating gate electrode. The floating gate electrode and the control gate electrode partially define an array of islands, and further partially define a plurality of bridges interconnecting the islands. The islands and the bridges define the cell-like top layout and may, for example, prevent process-induced damage to the floating gate test device.

Abstract: Various embodiments of the present application are directed to a method of forming an integrated circuit (IC). An isolation structure is formed between a logic region and a memory region of a substrate. A dummy structure is formed on the isolation structure and defines a dummy sidewall of the dummy structure facing the logic region. A boundary sidewall spacer is formed covering the dummy structure and at least partially defines a boundary sidewall of the boundary sidewall spacer facing the logic region. A protecting dielectric layer is formed on a top surface of the boundary sidewall spacer by converting an uppermost portion of the boundary sidewall spacer to the protecting dielectric layer. The protecting dielectric layer is removed, and a logic device structure is formed on the logic region.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a first isolation feature in a peripheral region of a substrate; recessing the cell region of the substrate after forming the first isolation feature; forming a second isolation feature in a cell region of the substrate after recessing the cell region of the substrate; forming a plurality of control gates over the cell region of the substrate; and forming a gate stack over the peripheral region of the substrate.

Abstract: A memory device includes a semiconductor fin, a floating gate, a control gate, a source region, an erase gate, and a select gate. The floating gate is above and conformal to the semiconductor fin. The control gate is above the floating gate. The source region is in the semiconductor fin. The erase gate is above the source region and adjacent the control gate. The select gate is above the semiconductor fin. The control gate is between the erase gate and the select gate.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.