Patents by Inventor Chih-Ru Chung

Chih-Ru Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-brightness light emitting diode
    Patent number: 6759685
    Abstract: The present invention discloses a high-brightness light emitting diode (LED), which primarily includes a LED epitaxial layer with a reflective layer and a Si substrate with an adhesive layer. The LED epitaxial layer is bonded with the Si substrate by attaching the reflective layer and the adhesive layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode are deposed on the front side of the LED. In the present invention, the reflective layer, the adhesive layer and the ohmic contact electrodes preferably perform single function, so that the most appropriate materials can be applied. Therefore, the LED of the present invention can exhibit excellent brightness.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: July 6, 2004
    Assignee: National Chung-Hsing University
    Inventors: Ray-Hua Horng, Tung-Hsing Wu, Shao-Hua Huang, Chih-Ru Chung, Juin-Jer Yang
  • Method for producing high-brightness LED
    Publication number: 20030087463
    Abstract: The present invention discloses a method for producing a high-brightness light emitting diode (LED), which primarily includes at least one step of bonding a reflective layer formed on an LED epitaxial layer to an adhesive layer formed on an Si substrate. An n-type ohmic contact electrode and a p-type ohmic contact electrode are deposed on the front side of the LED. In the present invention, the reflective layer, the adhesive layer and the ohmic contact electrodes preferably perform single function, so that the most appropriate materials can be applied. Therefore, the LED of the present invention can exhibit excellent brightness.
    Type: Application
    Filed: September 30, 2002
    Publication date: May 8, 2003
    Inventors: Ray-Hua Horng, Tung-Hsing Wu, Shao-Hua Huang, Chih-Ru Chung, Juin-Jer Yang
  • High-brightness light emitting diode
    Publication number: 20030085851
    Abstract: The present invention discloses a high-brightness light emitting diode (LED), which primarily includes a LED epitaxial layer with a reflective layer and a Si substrate with an adhesive layer. The LED epitaxial layer is bonded with the Si substrate by attaching the reflective layer and the adhesive layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode are deposed on the front side of the LED. In the present invention, the reflective layer, the adhesive layer and the ohmic contact electrodes preferably perform single function, so that the most appropriate materials can be applied. Therefore, the LED of the present invention can exhibit excellent brightness.
    Type: Application
    Filed: September 30, 2002
    Publication date: May 8, 2003
    Inventors: Ray-Hua Horng, Tung-Hsing Wu, Shao-Hua Huang, Chih-Ru Chung, Juin-Jer Yang