Patents by Inventor Chih-Sheng Li

Chih-Sheng Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210138299
    Abstract: An electric treadmill includes a motor and a motor driving circuit. The motor driving circuit is operable to control electric current flow from a positive electrode through the motor to a negative electrode to drive the motor. The motor driving circuit has a switch path connected between the positive electrode and the negative electrode. The switch path has a resistance element and a switch element connected in series. When the motor driving circuit receives power, the switch element will be switched to a disconnected state, so that the resistance element is inactive. When the motor driving circuit does not receive power, the switch element will be switched to a connected state, so that the resistance element becomes a load between the positive electrode and the negative electrode for consuming power generated by the motor when the endless belt is driven to rotate by an external force.
    Type: Application
    Filed: October 29, 2020
    Publication date: May 13, 2021
    Inventors: Chih-Jen Li, Jhih-Sheng Fang
  • Publication number: 20210134979
    Abstract: A method for fabricating gate structures includes providing a substrate, configured to have a first region and a second region. Dummy gate structures are formed on the substrate at the first and second regions, wherein each of the dummy gate structures has a first gate insulating layer on the substrate and a dummy gate on the first gate insulating layer. An inter-layer dielectric layer is formed over the dummy gate structures. The inter-layer dielectric layer is polished to expose all of the dummy gates. The dummy gates are removed. The first gate insulating layer at the second region is removed. A second gate insulating layer is formed on the substrate at the second region, wherein the first gate insulating layer is thicker than the second insulating layer. Metal gates are formed on the first and the second insulating layer.
    Type: Application
    Filed: October 31, 2019
    Publication date: May 6, 2021
    Applicant: United Microelectronics Corp.
    Inventors: Chih-Hao Pan, Chi-Cheng Huang, Kuo-Lung Li, Szu-Ping Wang, Po-Hsuan Chen, Chao-Sheng Cheng
  • Patent number: 10998235
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: May 4, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20210098399
    Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.
    Type: Application
    Filed: July 23, 2020
    Publication date: April 1, 2021
    Inventors: Chih-Fan Huang, Hui-Chi Chen, Chih-Sheng Li, Chih-Hung Lu, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 10964801
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20200343141
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Application
    Filed: July 14, 2020
    Publication date: October 29, 2020
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 10727135
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20200035564
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 30, 2020
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20200027963
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 23, 2020
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 10504787
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 10468504
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: November 5, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20190187728
    Abstract: An automatic following system includes a target apparatus and a following apparatus. The target apparatus includes a first magnetometer, a first processing unit, and a first wireless communications unit. The first magnetometer keeps transmitting geomagnetic azimuth information. The first processing unit receives the geomagnetic azimuth information and outputs first direction angle information. The first wireless communications unit transmits a wireless signal comprising the first direction angle information. The following apparatus includes a second magnetometer, a second processing unit, a second wireless communications unit, and a control unit. The second magnetometer keeps transmitting the geomagnetic azimuth information. The second wireless communications unit receives the wireless signal. The second processing unit generates second direction angle information, and calculates following steering angle information according to the first direction angle information and the second direction angle information.
    Type: Application
    Filed: April 26, 2018
    Publication date: June 20, 2019
    Inventors: Ming-Fong Tsai, Chih-Sheng Li, Chia-Yuan Lin, Chih-Ming Lin, Chung-Yuan Chang
  • Publication number: 20190140070
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20190131178
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 2, 2019
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 10164072
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 10163717
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20180182673
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Application
    Filed: February 26, 2018
    Publication date: June 28, 2018
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 9905467
    Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: February 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Publication number: 20170330959
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Application
    Filed: July 31, 2017
    Publication date: November 16, 2017
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
  • Patent number: 9722050
    Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: August 1, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu