Abstract: This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.

Abstract: A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: A positive photoresist WITHuniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.

Abstract: This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.

Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: A decomposition type resin having the formula (I): 1

Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.