Patents by Inventor Chih-Shin KO

Chih-Shin KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor devices and semiconductor devices
    Patent number: 11158719
    Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first barrier layer is formed on the gate dielectric layer, a second barrier layer is formed on the first barrier layer, a first work function adjustment layer is formed on the second barrier layer, the first work function adjustment layer and the second barrier layer are removed. After the first work function adjustment layer and the second barrier layer are removed, a second work function adjustment layer is formed over the gate dielectric layer, and a metal gate electrode layer is formed over the second work function adjustment layer.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: October 26, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Jing Lee, Chih-Shin Ko, Clement Hsingjen Wann
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES
    Publication number: 20200176581
    Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first barrier layer is formed on the gate dielectric layer, a second barrier layer is formed on the first barrier layer, a first work function adjustment layer is formed on the second barrier layer, the first work function adjustment layer and the second barrier layer are removed. After the first work function adjustment layer and the second barrier layer are removed, a second work function adjustment layer is formed over the gate dielectric layer, and a metal gate electrode layer is formed over the second work function adjustment layer.
    Type: Application
    Filed: November 25, 2019
    Publication date: June 4, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Jing LEE, Chih-Shin KO, Clement Hsingjen WANN