Patents by Inventor Chih-Shu Huang

Chih-Shu Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250031402
    Abstract: The present invention relates to a structure of hybrid type AlGaN/GaN high electron mobility transistor (HEMT) Device, which comprises a silicon substrate structure, and both of a depletion-mode (D-mode) AlGaN/GaN HEMT and a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT disposed on the silicon substrate structure. By connecting the depletion-mode (D-mode) AlGaN/GaN HEMT to the p-GaN gate structure of the p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the p-GaN gate E-mode AlGaN/GaN HEMT may be protected under any gate voltage.
    Type: Application
    Filed: July 16, 2024
    Publication date: January 23, 2025
    Inventor: CHIH-SHU HUANG
  • Publication number: 20250017199
    Abstract: A biomimetic waterfowl includes a housing, two waterfowl legs, and a driving module. The waterfowl legs are spaced apart from each other in a left-right direction and are mounted to a bottom portion of the housing. Each waterfowl leg includes a first segment mounted to the housing and rotatable about a first axis parallel to the left-right direction, and a second segment rotatable about a second axis parallel to the first axis. The driving module is mounted to the housing and is configured to drive the waterfowl legs. Each of the waterfowl legs is movable between a retracted state, where the first segment extends forwardly from the housing and the second segment extends rearwardly from the first segment, and a propelling state, where the first segment extends rearwardly from the housing and the second segment extends rearwardly from the first segment.
    Type: Application
    Filed: December 5, 2023
    Publication date: January 16, 2025
    Inventors: Wei-Yu HUANG, Chang-Qi ZHANG, Guan-Hao PAN, Li-Yuan YEH, Tai-Yu CHEN, Ching-Hung LIU, Chih-Wei SHEN, Ching-Shu LAI
  • Publication number: 20250024072
    Abstract: A method and apparatus for video coding system that uses intra prediction based on cross-colour linear model are disclosed. According to the method, model parameters for a first-colour predictor model are determined and the first-colour predictor model provides a predicted first-colour pixel value according to a combination of at least two corresponding reconstructed second-colour pixel values. According to another method, the first-colour predictor model provides a predicted first-colour pixel value based on a second degree model or higher of one or more corresponding reconstructed second-colour pixel values. First-colour predictors for the current first-colour block are determined according to the first-colour prediction model. The input data are then encoded at the encoder side or decoded at the decoder side using the first-colour predictors.
    Type: Application
    Filed: October 26, 2022
    Publication date: January 16, 2025
    Inventors: Olena CHUBACH, Ching-Yeh CHEN, Tzu-Der CHUANG, Chun-Chia CHEN, Man-Shu CHIANG, Chia-Ming TSAI, Yu-Ling HSIAO, Chih-Wei HSU, Yu-Wen HUANG
  • Patent number: 11808436
    Abstract: A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: November 7, 2023
    Assignee: EPISTAR CORPORATION
    Inventors: Chi-Chih Pu, Chen-Hong Lee, Shih-Yu Yeh, Wei-Kang Cheng, Shyi-Ming Pan, Siang-Fu Hong, Chih-Shu Huang, Tzu-Hsiang Wang, Shih-Chieh Tang, Cheng-Kuang Yang
  • Patent number: 11605731
    Abstract: The present invention relates to an epitaxial structure of N-face group III nitride, its active device, and its gate protection device. The epitaxial structure of N-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: March 14, 2023
    Inventor: Chih-Shu Huang
  • Patent number: 11469308
    Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: October 11, 2022
    Inventor: Chih-Shu Huang
  • Publication number: 20220178527
    Abstract: A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 9, 2022
    Inventors: CHI-CHIH PU, CHEN-HONG LEE, SHIH-YU YEH, WEI-KANG CHENG, SHYI-MING PAN, SIANG-FU HONG, CHIH-SHU HUANG, TZU-HSIANG WANG, SHIH-CHIEH TANG, CHENG-KUANG YANG
  • Publication number: 20220093780
    Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Application
    Filed: December 6, 2021
    Publication date: March 24, 2022
    Inventor: CHIH-SHU HUANG
  • Publication number: 20220093583
    Abstract: The present application relates to an epitaxial structure of Ga-face group III nitride and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Application
    Filed: December 6, 2021
    Publication date: March 24, 2022
    Inventor: CHIH-SHU HUANG
  • Patent number: 11255524
    Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: February 22, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Chi-Chih Pu, Chen-Hong Lee, Shih-Yu Yeh, Wei-Kang Cheng, Shyi-Ming Pan, Siang-Fu Hong, Chih-Shu Huang, Tzu-Hsiang Wang, Shih-Chieh Tang, Cheng-Kuang Yang
  • Patent number: 11195943
    Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: December 7, 2021
    Inventor: Chih-Shu Huang
  • Publication number: 20210083083
    Abstract: The present invention relates to an epitaxial structure of Ga-face group III nitride, its active device, and its gate protection device. The epitaxial structure of Ga-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 18, 2021
    Inventor: CHIH-SHU HUANG
  • Publication number: 20210083086
    Abstract: The present invention relates to an epitaxial structure of N-face group III nitride, its active device, and its gate protection device. The epitaxial structure of N-face AlGaN/GaN comprises a silicon substrate, a buffer layer (C-doped) on the silicon substrate, an i-GaN (C-doped) layer on the buffer layer (C-doped), an i-AlyGaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By connecting a depletion-mode (D-mode) AlGaN/GaN high electron mobility transistor (HEMT) to the gate of a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the gate of the p-GaN gate E-mode AlGaN/GaN HEMT can be protected under any gate voltage.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 18, 2021
    Inventor: CHIH-SHU HUANG
  • Publication number: 20210013317
    Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: January 14, 2021
    Inventor: CHIH-SHU HUANG
  • Patent number: 10886381
    Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: January 5, 2021
    Inventor: Chih-Shu Huang
  • Patent number: 10833163
    Abstract: The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-AlyGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-AlyGaN layer to the junction between the i-GaN channel layer and the i-AlxGaN layer.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: November 10, 2020
    Inventor: Chih-Shu Huang
  • Publication number: 20200292157
    Abstract: A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 ?m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Inventors: CHI-CHIH PU, CHEN-HONG LEE, SHIH-YU YEH, WEI-KANG CHENG, SHYI-MING PAN, SIANG-FU HONG, CHIH-SHU HUANG, TZU-HSIANG WANG, SHIH-CHIEH TANG, CHENG-KUANG YANG
  • Publication number: 20200251563
    Abstract: The present invention provides an epitaxial structure of Ga-face group III nitride, its active device, and the method for fabricating the same. The epitaxial structure of Ga-face AlGaN/GaN comprises a substrate, an i-GaN (C-doped) layer on the substrate, an i-Al(y)GaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-Al(y)GaN buffer layer, and an i-Al(x)GaN layer on the i-GaN channel layer, where x=0.1˜0.3; y=0.05˜0.3, and x?y. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of Ga-face group III nitride below the p-GaN inverted trapezoidal structure will be depleted, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs), p-GaN anode AlGaN/GaN Schottky barrier diodes (SBDs), or hybrid devices.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventor: CHIH-SHU HUANG
  • Patent number: 10670244
    Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: June 2, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chi-Chih Pu, Chen-Hong Lee, Shih-Yu Yeh, Wei-Kang Cheng, Shyi-Ming Pan, Siang-Fu Hong, Chih-Shu Huang, Tzu-Hsiang Wang, Shih-Chieh Tang, Cheng-Kuang Yang
  • Patent number: RE48798
    Abstract: A driver includes a semiconductor chip, a bridge rectifier, and a current driver. The semiconductor chip includes a rectifying diode and a constant current source formed thereon. The bridge rectifier includes the rectifying diode. The current driver includes the first constant current source to provide a constant current.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: October 26, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Shu Huang, Chang-Hseih Wu, Min-Hsun Hsieh