Abstract: An electrode structure of rechargeable battery includes a battery tab stack, an electrode lead, a welding protective layer and a welding seam. The battery tab stack is formed by extension of a plurality of electrode sheets. The electrode lead is joined to one side of the battery tab stack. The welding protective layer is joined to another side of the battery tab stack opposite to the electrode lead. The welding seam extends from the welding protective layer to the electrode lead through the battery tab stack.

Abstract: Method and apparatus of video coding are disclosed. According to one method, in the decoder side, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block when the neighboring block satisfies one or more conditions. An MPM (Most Probable Mode) list is derived based on information comprising at least one of neighboring Intra modes. A current Intra mode is derived utilizing the MPM list. The current luma block is decoded according to the current Intra mode According to another method, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block if the neighboring block is coded in BDPCM (Block-based Delta Pulse Code Modulation) mode, where the predefined Intra mode is set to horizontal mode or vertical mode depending on prediction direction used by the BDPCM mode.

Abstract: A fluid immersion cooling system includes a fluid tank that contains a layer of a dual-phase coolant fluid and one or more layers of single-phase coolant fluids. The dual-phase and single-phase coolant fluids are immiscible, with the dual-phase coolant fluid having a lower boiling point and higher density than a single-phase coolant fluid. A substrate of an electronic system is submerged in the tank such that high heat-generating components are immersed at least in the layer of the dual-phase coolant fluid. Heat from the components is dissipated to the dual-phase coolant fluid to generate vapor bubbles of the dual-phase coolant fluid. The vapor bubbles rise to a layer of a single-phase coolant fluid that is above the layer of the dual-phase coolant fluid. The vapor bubbles condense to droplets of the dual-phase coolant fluid. The droplets fall down into the layer of the dual-phase coolant fluid.

Abstract: Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.

Abstract: Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.

Abstract: Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.

Abstract: Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.

Abstract: Some embodiments of the present disclosure relate to a deep trench isolation (DTI) structure configured to enhance efficiency and performance of a photovoltaic device. The photovoltaic device comprises a functional layer disposed over an upper surface of a semiconductor substrate, and a pair of pixels formed within the semiconductor substrate, which are separated by the DTI structure. The DTI structure is arranged within a deep trench. Sidewalls of the deep trench are partially covered with a protective sleeve formed along the functional layer prior to etching the deep trench. The protective sleeve prevents etching of the functional layer while etching the deep trench, which prevents contaminants from penetrating the pair of pixels. The protective sleeve also narrows the width of the DTI structure, which increases pixel area and subsequently the efficiency and performance of the photovoltaic device.

Abstract: A protection device for rotatably supporting a portable electronic device includes a cover, a holder and a transmission cable. The holder has a first surface and a second surface opposite to each other. A sunken slot is formed on the first surface which supports the portable electronic device. A hole structure of the holder is connected to the sunken slot and formed between the first surface and the second surface, and an arc structure is disposed on the second surface to rotatably assemble with a rotary portion of the cover. A section of the transmission cable is connected to a first connector to be disposed inside the sunken slot, another section of cable is connected to a second connector to be embedded into the cover, and a middle section of the cable pierces through the hole structure to electrically connect the first connector with the second connector.

Abstract: A protection device includes a cladding cover and a folding cover. A portable electronic device is detachably disposed on the cladding cover. The cladding cover includes a first connector and a first combining portion. The first connector includes a first joint and a second joint. The first joint contacts a first terminal set of the portable electronic device since the portable electronic device is disposed on the cladding cover. The folding cover includes a second terminal set and a second combining portion. The second terminal set contacts the second joint since the cladding cover is assembled with the folding cover. The first/second combining portions are respectively disposed around the first/second terminal sets. The second combining portion is rotatably combined with the first combining portion so that the cladding cover is switched relative to the folding cover between a first position and a second position.

Abstract: A protection device for rotatably supporting a portable electronic device includes a cover, a holder and a transmission cable. The holder has a first surface and a second surface opposite to each other. A sunken slot is formed on the first surface which supports the portable electronic device. A hole structure of the holder is connected to the sunken slot and formed between the first surface and the second surface, and an arc structure is disposed on the second surface to rotatably assemble with a rotary portion of the cover. A section of the transmission cable is connected to a first connector to be disposed inside the sunken slot, another section of cable is connected to a second connector to be embedded into the cover, and a middle section of the cable pierces through the hole structure to electrically connect the first connector with the second connector.

Abstract: A protection device includes a cladding cover and a folding cover. A portable electronic device is detachably disposed on the cladding cover. The cladding cover includes a first connector and a first combining portion. The first connector includes a first joint and a second joint. The first joint contacts a first terminal set of the portable electronic device since the portable electronic device is disposed on the cladding cover. The folding cover includes a second terminal set and a second combining portion. The second terminal set contacts the second joint since the cladding cover is assembled with the folding cover. The first/second combining portions are respectively disposed around the first/second terminal sets. The second combining portion is rotatably combined with the first combining portion so that the cladding cover is switched relative to the folding cover between a first position and a second position.

Abstract: Some embodiments of the present disclosure relate to a deep trench isolation (DTI) structure configured to enhance efficiency and performance of a photovoltaic device. The photovoltaic device comprises a functional layer disposed over an upper surface of a semiconductor substrate, and a pair of pixels formed within the semiconductor substrate, which are separated by the DTI structure. The DTI structure is arranged within a deep trench. Sidewalls of the deep trench are partially covered with a protective sleeve formed along the functional layer prior to etching the deep trench. The protective sleeve prevents etching of the functional layer while etching the deep trench, which prevents contaminants from penetrating the pair of pixels. The protective sleeve also narrows the width of the DTI structure, which increases pixel area and subsequently the efficiency and performance of the photovoltaic device.

Abstract: A keyboard device is located in an accommodating space of a housing having first openings and a second opening. The keyboard device includes a flexible body and a transparent liquid. The flexible body is located in the accommodating space, and includes a main body, first pressing portions, patterns, and a second pressing portion. The first pressing portions are respectively located in the first openings. The patterns are located on the main body or the first pressing portions and are respectively exposed through the first openings. The second pressing portion is located in the second opening. The main body, and the first and second pressing portions have an enclosure space therein. The transparent liquid is located in the enclosure space. When the second pressing portion is pressed, the first pressing portions expand to protrude from the first openings, such that the patterns are enlarged.

Abstract: An electrical connector is provided, including a substrate, an electronic element, a plurality of metal members, and an insulating sheet. The electronic element includes a plurality of terminals. The substrate forms a recess with the electronic element disposed therein. The metal members are disposed on the electronic element and insulated from each other. Additionally, the metal members connect the terminals with the substrate. The insulating sheet connects to the metal members and is adjacent to the electronic element.

Abstract: A storage apparatus includes a first data section, a second data section, and a common data section. The first data section stores first data, the second data section stores second data, and the common data section stores common data. The storage apparatus stores a single copy of the common data. The common data and the first data correspond to a first memory bank. The common data and the second data correspond to a second memory bank.

Abstract: A keyboard device is located in an accommodating space of a housing having first openings and a second opening. The keyboard device includes a flexible body and a transparent liquid. The flexible body is located in the accommodating space, and includes a main body, first pressing portions, patterns, and a second pressing portion. The first pressing portions are respectively located in the first openings. The patterns are located on the main body or the first pressing portions and are respectively exposed through the first openings. The second pressing portion is located in the second opening. The main body, and the first and second pressing portions have an enclosure space therein. The transparent liquid is located in the enclosure space. When the second pressing portion is pressed, the first pressing portions expand to protrude from the first openings, such that the patterns are enlarged.

Abstract: An electrical connector is provided, including a substrate, an electronic element, a plurality of metal members, and an insulating sheet. The electronic element includes a plurality of terminals. The substrate forms a recess with the electronic element disposed therein. The metal members are disposed on the electronic element and insulated from each other. Additionally, the metal members connect the terminals with the substrate. The insulating sheet connects to the metal members and is adjacent to the electronic element.

Abstract: A non-volatile memory structure includes a substrate; a poly gate structure formed on the substrate; a contact etching stop layer formed over the poly gate structure and including at least a silicon nitride layer and a first silicon oxide layer overlying the silicon nitride layer; and an inter-layer dielectric layer formed on the first silicon oxide layer. The first silicon oxide layer has a density higher than that of the inter-layer dielectric layer.

Abstract: A non-volatile memory structure includes a substrate; a poly gate structure formed on the substrate; a contact etching stop layer formed over the poly gate structure and including at least a silicon nitride layer and a first silicon oxide layer overlying the silicon nitride layer; and an inter-layer dielectric layer formed on the first silicon oxide layer. The first silicon oxide layer has a density higher than that of the inter-layer dielectric layer.