Patents by Inventor Chih-Teng Chen

Chih-Teng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984478
    Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shu Wen Wang, Chih-Teng Liao, Chih-Shan Chen, Jui Fu Hsieh, Dave Lo
  • Patent number: 11955430
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Hsuan Lin, Hsi Chung Chen, Ji-Ling Wu, Chih-Teng Liao
  • Patent number: 11935941
    Abstract: A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hsuan Lin, Hsi Chung Chen, Chih-Teng Liao
  • Publication number: 20030061086
    Abstract: The present invention is a system and means for supporting transportations and distributions, which is the logistic system and means applied on the management of supporting T&D of delivering goods from a place to at least one other place. For system, which has plural systems for distribution plans of goods before distributions, monitoring, control and recording operations of goods in distributions and result evaluation operations of goods after distributions; the plural systems include a supporting T&D system, a distribution and returning process system and a transportation result management system. For means, which has plural modules as following: a basic data module, a distribution cost module, an geographic information system application module, a vehicle-arrangement and path plan module, a vehicle and driver assignment module, a monitoring and recording module, and a result management module. The modules may cooperate with general business enterprises.
    Type: Application
    Filed: November 30, 2001
    Publication date: March 27, 2003
    Applicant: Industrial Technology Research Institute
    Inventors: Hui-Chuan Chen, Chih-Teng Chen, Pi-Chuan Hung, Chang-Lin Yang, Chung-En Kao, Jiin-Liuh Huang, Tsai-Sui Weng