Abstract: A method for processing a curved plastic panel is to first form a hard coating layer, an optical function layer, and a printing layer on a flat plastic substrate, and then cut it into a predetermined shape, and then use a hot pressing and curving device to perform a hot pressing and curving process to the flat plastic substrate in order to make it becoming a curved plastic substrate. The hot pressing and curving device can simultaneously perform hot pressing during the heating process, and has the functions of real-time monitoring of the local temperature and the local curvature forming state, and then feedback to the local heating and curvature forming mechanism for adjustments. The monitoring of temperature and curvature can be divided into multiple stages, which can be monitored stage by stage and adjusted for heating or curvature forming to improve production yield.

Abstract: A light-guide sunroof assembly comprises a plastic substrate and a light source module furnished besides the plastic substrate. An outer layer of the plastic substrate is added with dye to form a colored background. A plurality of light-guide microstructures is furnished on the plastic substrate to guide the light generated by the light source module toward an inner surface of the plastic substrate. Thereby, the light generated by the light source module is guided by the plastic substrate and then ejects out of the inner surface of plastic substrate, so as to provide a light decoration or lighting effect that enriches the visual experience. Moreover, the plastic substrate is first formed into a curved plastic plate through a hot pressing process, and then a connecting structure is formed and fixed on the plastic plate by an insert-molding injection process, in order to replace the traditional car sunroof mechanism which is assembled by glass plate bonded with metal connecting parts.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A method includes depositing a first semiconductor layer and a second semiconductor layer over a substrate; patterning the first semiconductor layer, the second semiconductor layer, and the substrate to form a first nanostructure, a second nanostructure, and a semiconductor fin; forming a recess in the first nanostructure and the second nanostructure, the recess exposing the semiconductor fin; epitaxially growing a first layer in the recess, a first portion of the first layer being disposed along a first sidewall of the first nanostructure, a second portion of the first layer being disposed along the semiconductor fin, the first portion of the first layer comprising two sidewalls extending toward a middle of the recess, the first portion of the first layer further comprising a first surface most distal from the first sidewall and directly interposed between the two sidewalls, the first portion being physically separated from the second portion; and epitaxially growing a second layer over the first portion of

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.