Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.

Abstract: The present invention is directed to an obstacle avoidance system for an unmanned vehicle, comprising: an obstacle sensing module provided at a vehicle body; a vehicle-mounted computer provided at the vehicle body and electrically connected to the obstacle sensing module; a control module provided at the vehicle body and electrically connected to the vehicle-mounted computer; and a power source provided at the vehicle body and electrically connected to the obstacle sensing module, the vehicle-mounted computer and the control module.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A method includes forming a first gate spacer and a second gate spacer on a sidewall of a first gate structure. The first gate spacer is between the second gate spacer and the first gate structure. A first interlayer dielectric (ILD) layer is formed to surround the first gate spacer, the second gate spacer, and the first gate structure. A portion of the second gate spacer and a portion of the first ILD layer are removed simultaneously. A top surface of the second gate spacer is lower than a top surface of the first ILD layer.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

Abstract: The wearable action-aware device includes a clothing body, a signal receiving and computing element, and a conductive line made of conductive fabric. Two ends of the conductive line are electrically connected to the signal receiving and computing element, respectively, to form a circuit, and both the signal receiving and computing element and the conductive line are disposed on the clothing body. An exposed side of the conductive line has electrical conductivity, and the circuit is disposed on a part of the clothing body corresponding to a part of a body that needs to be measured. Action information of a user can be measured when the user wears the present invention wearable action-aware device.

Abstract: A wearable action-aware device is disclosed. The wearable action-aware device includes a clothing body, a signal receiving and computing element, and a conductive line made of conductive fabric. Two ends of the conductive line are electrically connected to the signal receiving and computing element, respectively, to form a circuit, and both the signal receiving and computing element and the conductive line are disposed on the clothing body. An exposed side of the conductive line has electrical conductivity, and the circuit is disposed on a part of the clothing body corresponding to a part of a body that needs to be measured. Action information of a user can be measured when the user wears the present invention wearable action-aware device.