Abstract: A device and method for facilitating orthogonal data transposition during data transfers to/from a processing array and a storage memory since the data words processed by the processing array (using computational memory cells) are stored orthogonally to how the data words are stored in storage memory. Thus, when data words are transferred between storage memory and the processing array, a mechanism orthogonally transposes the data words.

Abstract: A device and method for facilitating orthogonal data transposition during data transfers to/from a processing array and a storage memory since the data words processed by the processing array (using computational memory cells) are stored orthogonally to how the data words are stored in storage memory. Thus, when data words are transferred between storage memory and the processing array, a mechanism orthogonally transposes the data words.

Abstract: A device and method for facilitating orthogonal data transposition during data transfers to/from a processing array and a storage memory since the data words processed by the processing array (using computational memory cells) are stored orthogonally to how the data words are stored in storage memory. Thus, when data words are transferred between storage memory and the processing array, a mechanism orthogonally transposes the data words.

Abstract: A system may include a first inverter configured to invert a first data signal and a second inverter configured to invert a second data signal. A pull-up element may be coupled to an output of the first inverter on a first terminal and a power source on a second terminal, wherein the power source is also coupled to a pull-up element of a main output buffer. A pull-down element may be coupled to an output of the second inverter on a first terminal and a ground on a second terminal, wherein the ground is also coupled to a pull-down element of the main output buffer.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

Abstract: A system may include a first inverter configured to invert a first data signal and a second inverter configured to invert a second data signal. A pull-up element may be coupled to an output of the first inverter on a first terminal and a power source on a second terminal, wherein the power source is also coupled to a pull-up element of a main output buffer. A pull-down element may b e coupled to an output of the second inverter on a first terminal and a ground on a second terminal, wherein the ground is also coupled to a pull-down element of the main output buffer.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.