Abstract: A device is provided that includes a first memory and a second memory and an accessing circuit. Actual addresses of the first memory and the second memory alternately correspond to reference addresses of a processing circuit. The accessing circuit is configured to perform the steps outlined below. A read command corresponding to a reference read address is received from the processing circuit to convert the reference read address to an actual read address of the first memory and the second memory. A first read data is read from a first one of the first memory and the second memory according to the actual read address and a second read data is prefetched from a second one of the first memory and a second memory according to a next first read address simultaneously.

Abstract: A device is provided that includes a first memory and a second memory and an accessing circuit. Actual addresses of the first memory and the second memory alternately correspond to reference addresses of a processing circuit. The accessing circuit is configured to perform the steps outlined below. A read command corresponding to a reference read address is received from the processing circuit to convert the reference read address to an actual read address of the first memory and the second memory. A first read data is read from a first one of the first memory and the second memory according to the actual read address and a second read data is prefetched from a second one of the first memory and a second memory according to a next first read address simultaneously.

Abstract: In a method of testing a multi-port memory in accordance with a test pattern, test clock signals having the same test clock frequency but with different delay periods introduced therein are generated for controlling memory access through the different access ports of the memory. Consecutive memory operations of a test element of the test pattern are then conducted in a folded sequence upon a memory cell through the different access ports in accordance with the test clock signals such that the memory operations are completed within the same test clock cycle of the test element.

Abstract: A method and system of fault patterns oriented defect diagnosis for memories can analyze and recognize fault patterns and failure patterns after Memory Error Catches and Analyses (MECA) are done. The existent fault patterns are compared with a pre-simulated and grouped defect dictionary that defines possible defects of different fault patterns, and the defects of memories caused from their manufacturing process or circuit layout can be detected.

Abstract: In a method of testing a multi-port memory in accordance with a test pattern, test clock signals having the same test clock frequency but with different delay periods introduced therein are generated for controlling memory access through the different access ports of the memory. Consecutive memory operations of a test element of the test pattern are then conducted in a folded sequence upon a memory cell through the different access ports in accordance with the test clock signals such that the memory operations are completed within the same test clock cycle of the test element.

Abstract: A built-in programmable self-diagnostic circuit for finding and locating faults in a static random access memory (SRAM) unit. The circuit includes a plurality of multiplexers, a demultiplexer, a test pattern generator, a fault location indicator and a controller. The circuit uses either internal test instructions or pre-programmed test instructions to test the SRAM unit so that the exact location of any fault in the SRAM unit can be found and subsequently repaired.

Abstract: A built-in programmable self-diagnostic circuit for finding and locating faults in a static random access memory (SRAM) unit. The circuit includes a plurality of multiplexers, a demultiplexer, a test pattern generator, a fault location indicator and a controller. The circuit uses either internal test instructions or pre-programmed test instructions to test the SRAM unit so that the exact location of any fault in the SRAM unit can be found and subsequently repaired.

Abstract: A built-in programmable self-diagnostic circuit for finding and locating faults in a static random access memory (SRAM) unit. The circuit includes a plurality of multiplexers, a demultiplexer, a test pattern generator, a fault location indicator and a controller. The circuit uses either internal test instructions or pre-programmed test instructions to test the SRAM unit so that the exact location of any fault in the SRAM unit can be found and subsequently repaired.

Abstract: A built-in programmable self-diagnostic circuit for finding and locating faults in a static random access memory (SRAM) unit. The circuit includes a plurality of multiplexers, a demultiplexer, a test pattern generator, a fault location indicator and a controller. The circuit uses either internal test instructions or pre-programmed test instructions to test the SRAM unit so that the exact location of any fault in the SRAM unit can be found and subsequently repaired.