Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: The present disclosure relates to a hybrid integrated circuit. In one implementation, an integrated circuit may have a first region with a first gate structure having a ferroelectric gate dielectric, at least one source associated with the first gate of the first region, and at least one drain associated with the first gate structure of the first region. Moreover, the integrated circuit may have a second region with a second gate structure having a high-? gate dielectric, at least one source associated with the second gate structure of the second region, and at least one drain associated with the second gate structure of the second region. The integrated circuit may further have at least one trench isolation between the first region and the second region.

Abstract: The invention introduces an apparatus for detecting errors during data encryption. The apparatus includes a search circuitry and a substitution check circuitry. The key generation circuitry is arranged operably to convert a first value of one byte corresponding to a plaintext, an intermediate encryption result, or a round key into a second value of a K-bit according to an 8-to-K lookup table, where K is an integer ranging from 10 to 15 and the second value comprises (K minus 8) bits of a Hamming parity. The substitution check circuitry is arranged operably to employ check formulae corresponding to the 8-to-K lookup table to determine whether an error is occurred during a conversion of the first value of the one byte into the second value of the K-bit, and output an error signal when finding the error, where a total amount of the formulae is K minus 8.

Abstract: An electrode structure of rechargeable battery includes a battery tab stack, an electrode lead, a welding protective layer and a welding seam. The battery tab stack is formed by extension of a plurality of electrode sheets. The electrode lead is joined to one side of the battery tab stack. The welding protective layer is joined to another side of the battery tab stack opposite to the electrode lead. The welding seam extends from the welding protective layer to the electrode lead through the battery tab stack.

Abstract: An imaging lens assembly includes a plurality of optical elements and an accommodating assembly, wherein the accommodating assembly is for containing the optical elements. The accommodating assembly includes a conical-shaped light blocking sheet and a lens barrel. The conical-shaped light blocking sheet includes an out-side portion and a conical portion, and the conical portion is connected to the out-side portion. The conical portion includes a conical structure tapered from the out-side portion toward one of an object-side and an image-side along the optical axis. The lens barrel is disposed on one side of the conical portion. The optical elements include a most object-side optical element, a most image-side optical element and at least one optical element. The conical structure of the conical-shaped light blocking sheet is physically contacted with only one of the lens barrel, the most object-side optical element and the most image-side optical element.

Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: An imaging optical element set has an optical axis, and includes an object-side lens element, an image-side lens element and a light blocking sheet. The light blocking sheet is interposed between the object-side lens element and the image-side lens element, and includes an object-side outer surface, an image-side outer surface, an outer diameter portion, an inner diameter portion and a height compensation structure. The image-side outer surface is opposite to the object-side outer surface. The outer diameter portion has an outer diameter surface connected to the object-side outer surface and the image-side outer surface. The inner diameter portion has an inner diameter surface connected to the object-side outer surface and the image-side outer surface. The height compensation structure is in full circle form, and is for adjusting a height difference between the inner diameter surface and the outer diameter surface along a direction parallel to the optical axis.

Abstract: An image-recognition method is provided. The method includes the following steps: receiving structured data, wherein the structured data includes training-set data and testing-set data, and the structured data includes a plurality of groups, and each group includes one or more types, and each type includes a plurality of check-point images; training an artificial-intelligence (AI) model using the training-set data; inputting the testing-set data into the AI model to obtain a model evaluation of the AI model; and determining one or more first types with a lower overall recognition rate or a lower confidence level in the structured data, and deletes or corrects the check-point images in the one or more first types to update the structured data.

Abstract: An image-recognition method is provided. The method includes the following steps: receiving a plurality of check-point images, and classifying the check-point images into a plurality of groups; classifying the check-point images in each group into a plurality of types to generate first structured data; balancing a number of the check-point images in each type of each group in the first structured data to generate second structured data, wherein the second structured data includes training-set data and testing-set data; training an artificial-intelligence (AI) model using the training-set data; and inputting the testing-set data into the AI model to obtain a model evaluation of the AI model.

Abstract: An image-recognition method is provided. The method includes the following steps: receiving a plurality of check-point images, and classifying the check-point images into a plurality of groups; classifying the check-point images in each group into a plurality of types to generate first structured data, wherein the first structured data includes a first layer and a second layer, and the first layer indicates the groups in different statuses, the second layer is located with directories of the first layer, and the types in each group of the second layer indicate different components in a status corresponding to each group; and balancing a number of the check-point images in each type of each group in the first structured data to generate second structured data, wherein the second structured data is used to train an AI model for image recognition.

Abstract: An imaging lens assembly has an optical axis, and includes a plurality of optical elements. The optical elements include a light blocking sheet, and the light blocking sheet includes a through hole surface, a first surface, a second surface, a peripheral surface and a plurality of basin structures. The through hole surface surrounds the optical axis. The first surface and the second surface are connected to and surround the through hole surface. The peripheral surface is connected to the first surface and the second surface, and the peripheral surface is farther from the optical axis than the through hole surface from the optical axis. The basin structures are arranged in interval and around the optical axis, each of the basin structures is caved in from the first surface to the second surface, and each of the basin structures protrudes on the second surface.

Abstract: An imaging lens assembly includes a plurality of optical elements and an accommodating assembly, wherein the accommodating assembly is for containing the optical elements. The accommodating assembly includes a conical-shaped light blocking sheet and a lens barrel. The conical-shaped light blocking sheet includes an out-side portion and a conical portion, and the conical portion is connected to the out-side portion. The conical portion includes a conical structure tapered from the out-side portion toward one of an object-side and an image-side along the optical axis. The lens barrel is disposed on one side of the conical portion. The optical elements include a most object-side optical element, a most image-side optical element and at least one optical element. The conical structure of the conical-shaped light blocking sheet is physically contacted with only one of the lens barrel, the most object-side optical element and the most image-side optical element.

Abstract: A medicine management method includes acquiring user information of medicine usage corresponding to at least one assigned medicine; acquiring user information of medicine using reactions; and displaying the user information of medicine usage with first time information corresponding to different time points of using the at least one assigned medicine and the user information of medicine using reactions with second time information corresponding to different time points of occurring medicine using reactions concurrently.